Iii-sb Based Compounds (e.g., Alxgayinzsb, Etc.) Patents (Class 977/820)
  • Publication number: 20120267585
    Abstract: Compositions comprising nanosized objects (i.e., nanoparticles) in which at least one observable marker, such as a radioisotope or fluorophore, is incorporated within the nanosized object. The nanosized objects include, for example, metal or semi-metal oxide (e.g., silica), quantum dot, noble metal, magnetic metal oxide, organic polymer, metal salt, and core-shell nanoparticles, wherein the label is incorporated within the nanoparticle or selectively in a metal oxide shell of a core-shell nanoparticle. Methods of preparing the volume-labeled nanoparticles are also described.
    Type: Application
    Filed: June 6, 2012
    Publication date: October 25, 2012
    Applicant: UT-BATTELLE, LLC
    Inventors: Wei Wang, Baohua Gu, Scott T. Retterer, Mitchel J. Doktycz
  • Patent number: 8221651
    Abstract: Nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles and a method of producing a glass matrix having the nanoparticles dispersed therein.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: July 17, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Murase, Chunliang Li, Masanori Ando
  • Patent number: 8003010
    Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: August 23, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Daniel Landry, Wei Lui, Adam Peng
  • Publication number: 20110136139
    Abstract: Semiconductor nanoparticle complexes comprising semiconductor nanoparticles in association with cationic polymers are described. Also described are methods for enhancing the transport of semiconductor nanoparticles across biological membranes to provide encoded cells. The methods are particularly useful in multiplex settings where a plurality of encoded cells are to be assayed. Kits comprising reagents for performing such methods are also provided.
    Type: Application
    Filed: October 15, 2010
    Publication date: June 9, 2011
    Applicant: LIFE TECHNOLOGIES CORPORATION
    Inventors: MARCEL P. BRUCHEZ, R. HUGH DANIELS, JENNIFER DIAS, LARRY C. MATTHEAKIS, HONGJIAN LIU, AQUANETTE M. BURT, BERNDT CHRISTOFFER LAGERHOLM, DANITH H. LY
  • Patent number: 7811470
    Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: October 12, 2010
    Assignee: Evident Technologies
    Inventors: James Hayes, Luis Sanchez
  • Patent number: 7648689
    Abstract: The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In-P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: January 19, 2010
    Assignee: Hoya Corporation
    Inventor: Shuzo Tokumitsu
  • Patent number: 7399429
    Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: July 15, 2008
    Assignee: Evident Technologies, Inc.
    Inventors: Wei Liu, Adam Peng, Daniel Landry
  • Patent number: 7326365
    Abstract: Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: February 5, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Vikram C. Sundar
  • Patent number: 7286573
    Abstract: A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.
    Type: Grant
    Filed: August 12, 2004
    Date of Patent: October 23, 2007
    Assignee: United States of America as Represented by the Administrator of the National Aeronautics and Space Administration (NASA)
    Inventor: Cun-Zheng Ning
  • Patent number: 7282777
    Abstract: A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: October 16, 2007
    Assignee: California Institute of Technology
    Inventors: Shun Lien Chuang, Jian Li, Rui Q. Yang
  • Patent number: 7138098
    Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: November 21, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Nathan E. Stott