Abstract: In certain embodiments, a material comprising one or more semiconductive substances is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield substantially spherical nanoparticles.

Abstract: The subject of the invention is a method of synthesizing a compound MxPy where M is an element belonging to one of columns II to XV of the Periodic Table of the Elements or to the family of lanthanides or to the family of actinides, characterized in that it includes the reaction of x moles of compound comprising the element M in its oxidation state 0 with y/4n moles of compound (P4)n. The method of the invention may be carried out at a temperature much lower than those necessary in the methods of the prior art. It also allows low-temperature formation of nanoparticles and stoichiometric reaction control. The applications of this method are numerous: magnetic ferro-magnets for MnP and FeP; hydrodesulfurization catalysts for Ni2P; luminescent nanoparticles for biological applications; microelectronics and optoelectronics for InP; and electronics for GaP. The latter two phosphides are also used in the photovoltaic energy field.

Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.

Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.

Abstract: A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.