Boron-containing Compounds Patents (Class 977/822)
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Patent number: 8216364Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.Type: GrantFiled: April 14, 2008Date of Patent: July 10, 2012Assignee: Raytheon CompanyInventors: Delmar L. Barker, Mead M. Jordan, William R. Owens
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Patent number: 7884450Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: GrantFiled: March 27, 2009Date of Patent: February 8, 2011Assignee: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu
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Water based colorants comprising semiconductor nanocrystals and methods of making and using the same
Patent number: 7811470Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.Type: GrantFiled: October 4, 2007Date of Patent: October 12, 2010Assignee: Evident TechnologiesInventors: James Hayes, Luis Sanchez -
Patent number: 7713902Abstract: The present invention provides methods of preparing an improved platinum catalyst for use in fuel cells. The method includes preparing a platinum-loaded template of mesoporous alumina, and preparing a platinum catalyst using said alumina template. To prepare the template, a platinum solution and an aluminum alkoxide-butanol solution are combined to form a mixture and the mixture is then subjected to hydration and condensation reactions. To prepare the platinum catalyst, the template and carbon precursors are subjected to polymerization, and the resultant composite subjected to heat treatment. Due to the uniform platinum particle size and high specific surface area achieved, the method of the invention can produce a platinum catalyst with high catalytic activity and thermal stability and in turn improve the performance of the fuel cell in which the catalyst is used.Type: GrantFiled: December 5, 2005Date of Patent: May 11, 2010Assignee: Hyundai Motor CompanyInventors: Jongheop Yi, Pil Kim, Heesoo Kim
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Patent number: 7531892Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: GrantFiled: December 13, 2004Date of Patent: May 12, 2009Assignee: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu
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Patent number: 7459682Abstract: An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.Type: GrantFiled: November 14, 2006Date of Patent: December 2, 2008Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Wen-Hui Duan, Shao-Gang Hao, Gang Zhou, Jian Wu, Bing-Lin Gu
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Patent number: 7399429Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.Type: GrantFiled: May 10, 2005Date of Patent: July 15, 2008Assignee: Evident Technologies, Inc.Inventors: Wei Liu, Adam Peng, Daniel Landry
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Patent number: 7138098Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.Type: GrantFiled: October 8, 2004Date of Patent: November 21, 2006Assignee: Massachusetts Institute of TechnologyInventors: Moungi Bawendi, Nathan E. Stott