Tl-containing Or Bi-containing Compounds Patents (Class 977/823)
  • Patent number: 8987164
    Abstract: A semiconductor of which a substance such as a semiconductor photocatalyst is uniformly coated on the surface thereof with a graphitic carbon film and a method of fabricating the same are disclosed. According to the inventive method, a graphitic carbon film having a thickness of 1 nm or less is uniformly formed on the surface of the semiconductor by performing hydrothermal synthesis and pyrolysis on glucose, so as to keep the original structure crystallinity of the semiconductor photocatalyst to be a support of the carbon film.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: March 24, 2015
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jeung-Ku Kang, Dong-Ki Lee, Kyu-Sung Han, Weon-Ho Shin, Jung-Woo Lee, Jung-Hoon Choi, Kyung-Min Choi, Yeob Lee
  • Patent number: 8535554
    Abstract: A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: September 17, 2013
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Michael Paul Rowe, Minjuan Zhang, Paul Jantzen
  • Patent number: 7897417
    Abstract: Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: March 1, 2011
    Assignee: National Research Council of Canada
    Inventors: Farid Bensebaa, Pascal L'Ecuyer, Jianfu Ding, Andrea Firth
  • Patent number: 7811470
    Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: October 12, 2010
    Assignee: Evident Technologies
    Inventors: James Hayes, Luis Sanchez
  • Patent number: 7713902
    Abstract: The present invention provides methods of preparing an improved platinum catalyst for use in fuel cells. The method includes preparing a platinum-loaded template of mesoporous alumina, and preparing a platinum catalyst using said alumina template. To prepare the template, a platinum solution and an aluminum alkoxide-butanol solution are combined to form a mixture and the mixture is then subjected to hydration and condensation reactions. To prepare the platinum catalyst, the template and carbon precursors are subjected to polymerization, and the resultant composite subjected to heat treatment. Due to the uniform platinum particle size and high specific surface area achieved, the method of the invention can produce a platinum catalyst with high catalytic activity and thermal stability and in turn improve the performance of the fuel cell in which the catalyst is used.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: May 11, 2010
    Assignee: Hyundai Motor Company
    Inventors: Jongheop Yi, Pil Kim, Heesoo Kim
  • Patent number: 7648689
    Abstract: The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In-P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: January 19, 2010
    Assignee: Hoya Corporation
    Inventor: Shuzo Tokumitsu
  • Publication number: 20090220756
    Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
    Type: Application
    Filed: March 16, 2009
    Publication date: September 3, 2009
    Applicant: PIXELLIGENT TECHNOLOGIES LLC
    Inventors: Zhiyun Chen, Erin F. Fleet, Serpil Gonen, Gregory D. Cooper
  • Patent number: 7399429
    Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: July 15, 2008
    Assignee: Evident Technologies, Inc.
    Inventors: Wei Liu, Adam Peng, Daniel Landry
  • Patent number: 7138098
    Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: November 21, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Nathan E. Stott