Abstract: A method of leveling a polymer pen array includes contacting a pen array with a surface and measuring a total force exerted on the surface by the pen array, the pen array being disposed at a first angle with respect to a first axis of the surface and a second angle with respect to a second axis of the surface; tilting one or both of the pen array and the surface to vary the first and second angles of the pen array with respect to the surface; measuring the total force exerted by the tilted pen array on the surface; and repeating the tilting and measuring steps until a global maximum of the total force exerted on the surface by the pen array is measured, thereby determining first and second angles which correspond to a leveled position of the pen array with respect to the surface.

Abstract: Methods and processes for quantitatively determining the ratio of the metallic to semiconductor tubes in the sample single-wall carbon nanotubes is provided. The single-walled carbon nanotubes can be sonicated to debundle the bulk material. The debundled SWNTs can be coated with a polymer, such as sulfonated polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene (SDPS), and the coated SWNTs can be deposited on a substrate. The total number of tubes can be determined by atomic force microscopy (AFM). The semiconducting nanotubes can be determined by photoluminescence spectroscopy. The combination of photoluminescence and AFM measurements provides a quantitative ratio of the metallic to semiconductor tubes in the sample.

Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air.

Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

Abstract: A charged-particle optical system (100) such as an electron microscope has a vacuum chamber (102) with a space (104) for accommodating a specific one (114) of multiple specimens in operational use. The charged-particle optical system has a loader (106) with a part (108) that is moveable into and out of the space. The part is configured for attaching a specimen carrier (110), brought from outside the system, to a first holder (112) or to detach the carrier from the first holder and to remove the carrier from inside the system. The carrier accommodates a first specimen. The system has an interface (116) in a wall of the chamber for removably accommodating the first holder (112) or a second holder (118) with a second specimen (120) mounted thereon.

Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) to perform sample measurements using a survey scan that is less than five lines, and more preferably two lines, to accurately locate a field of features of a sample. This is accomplished by selecting a step distance between adjacent lines of the survey scan that does not equal the pitch of the features in a direction orthogonal to the direction the survey scan traverses, i.e., does not equal the pitch of the features in the scan direction, XPO. The aspect ratio of the scans can also be modified to further improve sample throughput.

Abstract: Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.

Abstract: A cryogenic variable temperature scanning tunneling microscope of novel design and component configuration, for use in conjunction with a variety of low temperature methodologies.

Abstract: A system and method for aligning prior patterning positions formed by a first SPM tip with a second SPM tip in combination with an SPM system includes identifying first location information that includes a location of the first SPM tip and a sample reference location on an SPM sample and storing the first location information in a storage area. After replacing the first SPM tip with the second SPM tip, second location information, which includes a location of the second SPM tip and the sample reference location on the SPM sample, is identified. Displacement is calculated between the location of the second SPM tip and the first SPM tip based on the first and second location information, and either the second SPM tip or a stage supporting the SPM sample is translated to align the second SPM tip with the location of the first SPM tip in accordance with the calculated displacement.