Abstract: A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

Abstract: A wafer probe alignment system includes a test probe needle including a body having a tip that is configured to make contact with a surface of a wafer at a first tip position, wherein the body is deformable and includes a sensing area that undergoes a deformation in response to at least one force, including a lateral friction force, applied to the tip; at least one sensor configured to monitor the sensing area for deformation caused by a lateral friction force and generate at least one first sensor information representative of the lateral friction force; and a controller configured to control a position of the tip, wherein the controller is configured to receive the at least one first sensor information and reposition the tip to counteract the lateral friction force in order to maintain the tip at the first tip position.

Abstract: A charged probe and an electric field measuring method are provided. The probe can be charged with single electricity on single nano particle attached on the top of the probe tip being a charged probe and the probe is applicable for measuring the electric fields of object in the nano scale. The probe comprises an insulating tip base, a cantilever and a single nano-particle. The cantilever is arranged for supporting the insulating tip base and the single nano-particle is configured on the erosion plane. After conducting contact electrification method to charge the electric nano particle, the single nano-particle will be charged with fixed number of single electrical charge. Then, the amount of the fixed number of single electrical charge is calculated by the virtual image charge calculation method. The charged probe can be used to measure the electric fields distribution by tapping mode or f-d curve measurement.

Abstract: A probe for atomic force microscopy may be provided by depositing a thin film onto a wafer substrate and etching the substrate to leave the thin film behind in the form of a handle, a cantilever, and a probe tip in the cantilever. In some embodiments, a thin film substrate for the probe may be accomplished by forming the probe mold on a first wafer, bonding a second wafer onto the first wafer, and patterning out the second wafer to define the substrate for the probe on the first wafer. The thin film may be deposited onto the exposed portions of the first wafer. Thereafter, portions of the first and second wafers may be removed to leave behind the probe.

Abstract: A pattern having exceptionally small features is printed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern is printed using an array of probes, each probe having: 1) a photocatalytic nanodot at its tip; and 2) an individually controlled light source. The surface of the partially fabricated integrated circuit comprises a photochemically active species. The active species undergoes a chemical change when contacted by the nanodot, when the nanodot is illuminated by light. To print a pattern, each probe raster-scans its associated nanodot across the surface of the partially fabricated integrated circuit. When the nanodot reaches a desired location, the nanodot is illuminated by the light source, catalyzing a change in the reactive species and, thus, printing at that location. Subsequently, reacted or unreacted species are selectively removed, thereby forming a mask pattern over the partially fabricated integrated circuit.

Abstract: The present patent application describes a cantilever for atomic force microscopy (AFM), which includes a cantilever body having a fixed end and a free end, the free end having a surface region being chemically modified by a dendron in which a plurality of termini of the branched region of the dendron are bound to the surface, and a terminus of the linear region of the dendron is functionalized.

Abstract: An atomic force microscopy (AFM) method includes a scanning probe that scans a surface of a structure to produce a first structure image. The structure is then rotated by 90° with respect to the scanning probe. The scanning probe scans the surface of the structure again to produce a second structure image. The first and second structure images are combined to produce best fit image of the surface area of the structure. The same method is used to produce the best fit image of a flat standard. The best fit image of the flat standard is subtracted from the best fit image of the structure to obtain a true topographical image in which Z direction run out error is substantially reduced or eliminated.

Abstract: Techniques for coupling with devices that convert displacements into differential voltages and improve the sensitivity of such devices. The disclosed system improves the accuracy and resolution of a transducers such as an LVDT by converting certain parts of the circuit to a digital circuit. One embodiment uses a processor, although other digital processing circuitry may also be used.

Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

Abstract: This invention addresses a contact mode hybrid scanning system (HSS), which can be used for measuring topography. The system consists of a cantilever or a cantilever array, a scanning stage, a light source, and instrumentation to synchronize and control the individual components. Detection of the cantilever's movement is achieved by directly measuring the change in disposition of the cantilever including its height, rotation at one or more points on the cantilever thereby providing a partial three-dimensional reconstruction without the need for actuating the cantilever. This is achieved by employing a displacement meter such as a triangulation meter or a confocal meter.

Abstract: A frequency shift ?f obtained by an FM-AFM can be expressed by a simple linear coupling of a ?fLR derived from a long-range interaction force and a ?fSR derived from a short-range interaction force. Given this factor, a ?f curve on an atomic defect and a ?f curve on a target atom on the sample surface are each measured for only a relatively short range scale (S1 and S2), and a difference ?f curve of those two curves is obtained (S3). Since the difference ?f curve is derived only from a short-range interaction force, a known conversion operation is applied to this curve obtain an F curve which illustrates the relationship between the force and the distance Z, and then the short-range interaction force on the target atom is obtained from the F curve (S4). Since the range scale in measuring the ?f curve can be narrowed, the measurement time can be shortened, and since the conversion from the ?f curve into F curve is required only once, the computational time can also be shortened.

Abstract: There is provided a scanning probe microscope apparatus which has a high sensitivity for the interaction between the cantilever and the sample and comprises a cantilever that can oscillate stably in dynamic mode even when a mechanical Q value is low. A driving signal having a frequency close to the resonant frequency of the cantilever (4) is supplied from the signal generator (9) to the oscillation exciting means (10) to separately (forcibly) oscillate the cantilever (4). And the frequency of the driving signal or the resonant frequency of the cantilever is controlled (by adjusting the distance between the cantilever (4) and the sample (1)), such that the phase difference between the oscillation of the cantilever (4) detected by the oscillation detecting means (5) and the driving signal becomes zero, i.e. the frequency of the driving signal and the resonant frequency of the cantilever (4) match.

Abstract: The invention provides methods of nanolithography and products therefor and produced thereby. In particular, the invention provides a nanolithographic method referred to as high force nanografting (HFN). HFN utilizes a tip (e.g., a scanning probe microscope (SPM) tip such as an atomic force microscope (AFM) tip) to pattern a substrate passivated with a resist. In the presence of a patterning compound, the tip is used to apply a high force to the substrate to remove molecules of the resist from the substrate, whereupon molecules of the patterning compound are able to attach to the substrate the form the desired pattern.

Abstract: The amplitude control of a cantilever based on the van der Pol model is performed through feedback using measurement data on a deflection of the cantilever. A self-oscillating circuit integrates a deflection angle signal of a cantilever detected by a deflection angle measuring mechanism using an integrator, multiplies a resulting integral value by linear feedback gain generated by a gain generator, and an output corresponding to the linear feedback signal is generated. Also, the self-oscillating circuit cubes the deflection angle signal using analog multipliers, integrates the resulting values using integrators, multiplies the resulting integral values by a nonlinear feedback gain generated by a gain generator, and an output corresponding to the nonlinear feedback signal is generated. Furthermore, the self-oscillating circuit adds the outputs together using an adder, and a voltage signal for a piezo element is generated.

Abstract: A simple method for integrating a circuit onto a probe with a handle, a cantilever and a tip is provided. By fabricating a probe whose surface has recessed patterns of the desirable profile, a circuit can be formed on one part of the handle out over the cantilever and back onto a different part of the handle without employing a circuit lithography step. The circuit material constituting the circuit is deposited orthogonally to the probe surface with a line-of-sight technique.

Abstract: In one aspect, a method of nanolithography is provided, the method comprising providing a substrate; providing a scanning probe microscope tip; coating the tip with a deposition compound; and subjecting said coated tip to a driving force to deliver said deposition compound to said substrate so as to produce a desired pattern. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.

Abstract: The present invention provides a self-sensing tweezer device for micro and nano-scale manipulation, assembly, and surface modification, including: one or more elongated beams disposed in a first configuration; one or more oscillators coupled to the one or more elongated beams, wherein the one or more oscillators are operable for selectively oscillating the one or more elongated beams to form one or more “virtual” probe tips; and an actuator coupled to the one or more elongated beams, wherein the actuator is operable for selectively actuating the one or more elongated beams from the first configuration to a second configuration.

Abstract: Nanoscale impedance microscopy and related methods, circuit and/or apparatus capable of quantitatively measuring magnitude and phase of alternating current flow.

Abstract: Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips (e.g., atomic force microscope tips, etc.) for deposition of ink materials including sol-gel inks. Additive methods can be combined with subtractive methods. Holes can be filled with nanostructures. Heights of the nanostructures filling the holes can be controlled without losing control of the lateral dimensions of the nanostructures. Phase shifters on phase shifting masks (PSMs) are additively repaired with selectively deposited sol-gel material that is converted to solid oxide, which has optical transparency and index of refraction adapted for the phase shifters repaired.

Abstract: Thin and short cantilevers possess both a low force constant and a high resonance frequency, thus are highly desirable for atomic force microscope (AFM) imaging and force measurement. According to some embodiments, the invention provides small silicon (Si) cantilevers integrated with a Si tip, for example fabricated from SOI wafers that are used for reducing the variation of thickness of the cantilevers. In one example, the fabrication process provided SOI chips containing 40 silicon cantilevers integrating with an ultra-sharp Si tip. The resolution of images obtained with these tips was much higher than those obtained with the commercial tips, while the force constants were much less, that is, more suitable for imaging soft samples.

Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip.

Abstract: A carbon thin line probe having a carbon thin line selectively formed at a projection-like terminal end portion thereof by means of an irradiation of high-energy beam, the carbon thin line internally containing a metal. Thereby achieved is a carbon thin line probe suitable for example for the probe of SPM cantilever, which has a high aspect ratio and high durability and reliability, capability of batch processing based on a simple manufacturing method, and to which magnetic characteristic can be imparted.

Abstract: A novel method of transporting ink to a substrate with dip-pen nanolithographic (DPN) stamp tips coated with polymer (e.g., polydimethylsiloxane (PDMS), etc.). This kind of tip adsorbs chemicals (“inks”) easily and is used to generate DPN nanopatterns that are imaged with the same tip after a DPN process. This method builds a bridge between micro-contact printing (?CP) and DPN, making it possible for one to easily generate smaller structures of any molecules that have been patterned by the ?CP technique. The easy tip-coating and writing process enriches the state-of-the-art DPN technique. The sub-100 nm DPN resolution obtained by using this kind of novel tip is comparable to that with a conventional Si3N4 probe tip. Importantly, the unique stamp tip was able to transfer solvent (e.g., liquid “ink”) onto a substrate, resulting in fabrication of hollow nanostructures with only one DPN holding/writing step.

Abstract: A method of operating a probe based instrument includes a light source that generates and directs a beam of light towards a probe of the instrument to detect a property of probe deflection. The method automatically adjusts the position of the light beam on the probe based on movement of the probe by a Z actuator so as to eliminate apparent parasitic deflection of the probe. A light source assembly for detecting deflection of a probe preferably includes a base, a tip/tilt stage mounted on the base and a light source supported by the tip/tilt stage. The tip/tilt stage includes at least one electrically actuated fine adjustment actuator that controls the tip/tilt stage, preferably independently of movement of the AFM scanner used to move the probe.

Abstract: The invention relates to a combined method in which a high-resolution image of a sample surface is recorded by means of scanning force microscopy and the locally high-resolution, chemical nature (which is correlated with this) of the sample surface is measured by means of mass spectroscopy. The surface is chemically analyzed on the basis of laser desorption of a restricted surface area. For this purpose, the surface is illuminated in a pulsed form at each point of interest using the optical near-field principle. The optical near-field principle guarantees analysis with a position resolution which is not diffraction-limited. A hollow tip of the measurement probe that is used allows unambiguous association between the chemical analysis and a selected surface area. The highly symmetrical arrangement allows good transmission of the molecular ions that are produced.

Abstract: A system that includes an optical subsystem and an atomic force microscope probe is provided. The optical subsystem is configured to generate positional information about a location on a surface of the specimen. The system is configured to position the probe proximate the location based on the positional information. One method includes generating positional information about a location on a surface of a specimen with an optical subsystem. The method also includes positioning an atomic force microscopy probe proximate the location based on the positional information. Another system includes an optical subsystem configured to measure overlay of a wafer using scatterometry. The system also includes an atomic force microscope configured to measure a characteristic of a feature on the wafer. An additional method includes measuring overlay of a wafer using scatterometry. The method also includes measuring a characteristic of a feature on the wafer using atomic force microscopy.

Abstract: Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.

Abstract: A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.

Abstract: This invention pertains to an x-ray microprobe that can be placed very close the sample surface. A practical implementation is an x-ray target material integrated to an atomic force microscope (AFM) tip and an electron beam is focused to the target materials to generate x-ray emission. This microprobe can be combined with energy-resolved detector or a fluorescence imaging system for material analysis applications.

Abstract: A heat emitting probe including a conductive nanotube probe needle with its base end fastened to a holder and its tip end protruded, a heat emitting body formed on the probe needle, a conductive nanotube lead wire fastened to the heat emitting body, and an electric current supply that causes an electric current to pass through the conductive nanotube lead wire and both ends of the probe needle. The tip end of the probe needle is thus heated by an electric current flowing through the heat emitting body. A heat emitting probe apparatus includes the above-described heat emitting probe, a scanning mechanism that allows the heat emitting probe to scan over a thermal recording medium, and a control circuit that causes the tip end of the probe needle to emit heat, thus recording extremely small hole patterns in the surface of a thermal recording medium.