Abstract: In one embodiment, a magnetic sensor comprises a read element and a magnetic-domain-control film positioned on both sides of the read element in a cross-track direction. The magnetic-domain-control film has a flare shape which causes the magnetic-domain-control film to flare away in an element height direction from the depthwise end of read element and extending in both directions away from the read element in a cross-track direction. In another embodiment, a method for forming a magnetic sensor includes forming a read element and forming a magnetic-domain-control film positioned on both sides of the read element in a cross-track direction, wherein the magnetic-domain-control film has a flare shape which causes the magnetic-domain-control film to flare away from the depthwise end of read element extending in both directions in a cross-track direction.

Abstract: An apparatus and generally associated method may be directed to a magnetic reader capable of concurrently or independently data access and environmental measurements. Various embodiments construct such a magnetic reader with first and second data transducing elements that are each adapted to selectively read data and measure clearance from an adjacent data storage media.

Abstract: A method of forming a hardened layer on a tape drive head assembly comprising building a tape drive head assembly, in which a number of layers of amorphous material are applied along read and write components of the tape drive head assembly as the tape drive head assembly is built and selectively heating portions of the amorphous material. A drive head assembly comprising a write component, a magnetic resistive element, and a number of layers of amorphous material, in which a portion of the amorphous material is hardened.

Abstract: According to one embodiment, a magnetic head manufacturing method includes forming a protective layer on the surfaces of a main magnetic pole layer, a processed spin torque oscillator, and a mask formed on the spin torque oscillator, and further performing ion beam etching on the main magnetic pole layer and the protective layer on the surface of the main magnetic pole layer through the mask such that the protective layer is left behind on the side surfaces of the spin torque oscillator and removed from the surface of the main magnetic pole layer, thereby processing the main magnetic pole layer such that its side surfaces have a shape tapered toward the substrate.

Abstract: A magnetic sensor having reduced read gap thickness, reduced signal noise and improved signal to noise ratio. The sensor includes a sensor stack and hard bias structures formed at either side of the sensor stack for biasing the free layer of the sensor. A protective layer is formed over a portion of the hard bias structure, however a portion of the hard bias structure extends upward toward the upper shield and is disposed between the protective layer and the sensor stack as a result of the process used to form the magnetic bias structure. This portion of the hard bias structure that extends toward the upper shield has a reduced magnetization relative to the rest of the hard bias structure so that it will not magnetically couple with the upper shield.

Abstract: In certain embodiments, a magnetic had includes a top shield and a bottom shield positioned at an air bearing surface. A polarizer and a nonmagnetic layer are positioned between the top and bottom shields. An analyzer is positioned adjacent the nonmagnetic layer at a distance recessed from the air bearing surface. Current travels through the top shield, polarizer, nonmagnetic layer, and first analyzer.

Abstract: In certain embodiments, an apparatus includes a magnetoresistive (MR) sensor having a first and second electrode positioned at a first side of the MR sensor and a third electrode positioned at a second side of the MR sensor opposite the first side.

Abstract: A giant magnetoresistive (GMR) sensor for reading information from a magnetic storage medium has a first non-magnetoresistive layer, a first magnetoresistive layer formed on the first non-magnetoresistive layer, a second non-magnetoresitive layer formed on the first magnetoresistive layer, a second magnetoresistive layer formed on the second non-magnetoresistive layer, and a third non-magnetoresistive layer formed on the second magnetoresistive layer. The first non-magnetoresistive layer is provided with a single step on a surface of the first non-magnetoresistive layer. The step has an edge extending in a direction substantially parallel to a plane of a working surface of the GMR sensor.

Abstract: A microwave assisted magnetic head includes a main magnetic pole; a trailing shield, a main coil for causing the main magnetic pole to generate a perpendicular recording field, at least one secondary coil for generating an in-plane alternate-current (AC) magnetic field with a frequency in a microwave band from a magnetic recording gap between the main magnetic pole and the trailing shield, nonmagnetic films formed on magnetic recording gap facing surfaces that are defined by the main magnetic pole and the trailing shield, the main magnetic pole and the trailing shield being configured with first soil magnetic films, and second soft magnetic films formed further on the surfaces of the nonmagnetic films. The second soft magnetic films have larger anisotropy fields than the first soft magnetic films have.

Abstract: A magnetoresistive (MR) reader is adjacent to at least one shield that extends from an air bearing surface (ABS) a first distance. The shield has a stabilizing feature that is contactingly adjacent the MR reader and extends from the ABS a second distance that is less than the first distance.

Abstract: A magnetoresistive read sensor is described. The sensor is a magnetically responsive stack positioned between top and bottom electrodes on an air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by a first multilayer insulator structure between the stack and at least one electrode to enhance reader sensitivity.

Abstract: An apparatus and associated method may be used to produce a magnetic element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers with a first portion and a laterally adjacent second portion. The second portion having a predetermined roughness between at least two layers capable of producing orange-peel coupling.

Abstract: A first trench sidewall has a continuous first taper angle that terminates at a first plane. At least one layer may be deposited that forms a second trench sidewall with a continuous second taper angle that extends a predetermined depth past the first plane and is less than the first taper angle. A write pole may then be formed on the second trench sidewall with the write pole being closer to the first trench sidewall at the predetermined depth than at the first plane.

Abstract: According to one embodiment, a magnetic head for reading data from a magnetic recording medium by utilizing a magnetic resonance phenomenon includes an auxiliary magnetic pole, a first oscillator, and a second oscillator. The auxiliary magnetic pole is to apply a magnetic field to the magnetic recording medium. The first oscillator is to oscillate at a first frequency and apply, to the magnetic recording medium, a first high-frequency magnetic field corresponding to the first frequency. The second oscillator to oscillate at a second frequency different from the first frequency and apply, to the magnetic recording medium, a second high-frequency magnetic field corresponding to the second frequency.

Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Abstract: According to one embodiment, a three-dimensional magnetic recording and reproducing apparatus includes a magnetic head and a magnetic storage medium. The magnetic head includes a spin-torque oscillator including a free layer, a non-magnetic layer and a fixed layer, magnetization of the free layer being rotatable, the non-magnetic layer being laminated on the free layer, the fixed layer being laminated on the non-magnetic layer, a magnetization direction of the fixed layer being fixed. The magnetic storage medium includes first magnetic layers formed of magnetic materials having different resonant frequencies, each of the first magnetic layers being formed of an in-plane magnetization film and having recording tracks.

Abstract: According to one embodiment, a magnetic oscillator includes a layered film and a pair of electrodes. The layered film includes a first ferromagnetic layer, an insulating layer stacked on the first ferromagnetic layer, and a second ferromagnetic layer stacked on the insulating layer. The pair of electrodes is configured to apply a current to the layered film in a direction perpendicular to a film surface of the layered film. Regions having different resistance area products are provided between the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a copper layer, a metal intermediate layer and a main spacer layer composed of gallium oxide as a primary component. The copper layer and the metal intermediate layer are positioned between the main spacer layer and the first magnetic layer. The metal intermediate layer is positioned between the copper layer and the main spacer layer.

Abstract: A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum.

Abstract: A magnetoresistive transducer head assembly includes a reader element, a writer element and a high impedance shunt electrically connecting the reader element and the writer element. The high impedance shunt provides a high impedance conductive path for maintaining electrostatic charge equipotential between the reader element and the writer element.

Abstract: An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5?a?68, 10?b?73, and 22?c?85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.

Abstract: According to one embodiment, a magnetic recording head includes a main magnetic pole, a shield, and a stacked structure body. The shield is provided to oppose the main magnetic pole. The stacked structure body is provided between the main magnetic pole and the shield. The stacked structure body includes a first magnetic layer, a second magnetic layer, and an intermediate layer. The first magnetic layer has coercivity lower than a magnetic field applied from the main magnetic pole. A size of a film surface of the second magnetic layer is larger than a size of a film surface of the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer and is made of a nonmagnetic material. A current is configured to pass between the first magnetic layer and the second magnetic layer.

Abstract: A method is disclosed for forming a magnetic shield in which all domain patterns and orientations are stable and which are consistently repeated each time said shield is exposed to an initialization field. The shield is given a shape which ensures that all closure domains can align themselves at a reduced angle relative to the initialization direction while still being roughly antiparallel to one another. Most, though not all, of these shapes are variations on trapezoids.

Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.

Abstract: A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.

Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 ? Ni80Fe20 and preferably to at least 15 ? Ni80Fe20.