Abstract: In one embodiment, a magnetic head includes a sensor stack of thin films including a free layer; a hard bias structure comprising a first foundation layer, a second foundation layer formed on the first foundation layer and a hard bias layer formed above the second foundation layer, wherein portions of the first and second foundation layers positioned along a side wall of the sensor stack have a discrete island structure. Additional embodiments are also disclosed.

Abstract: A magnetic write head having a main magnetic write pole and a magnetic sub-pole that are configured to maximize magnetic performance. The main magnetic write pole has a flared portion located near the air bearing surface and a non-flared portion removed from the air bearing surface. A magnetic sub-pole is formed adjacent to the main magnetic write pole and terminates at a front endpoint that is recessed from the air bearing surface but is closer to the air bearing surface than the non-flared portion.

Abstract: A thermally-assisted magnetic recording head includes a magnetic pole and a heating element. The magnetic pole has a front end face located in a medium facing surface. The magnetic pole forms on a track a distribution of write magnetic field strength that peaks at a first position on the track. The heating element forms on the track a distribution of temperature that peaks at a second position on the track. The first position is located on the trailing side relative to the second position. The front end face of the magnetic pole has a main portion and first and second extended portions. The first and second extended portions are extended in the track width direction from the main portion at positions on the leading side relative to the center of the main portion in the direction of travel of a magnetic recording medium.

Abstract: According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a magnetic domain, a substantially non-magnetic region laterally adjacent to the magnetic domain, and an exchange spring structure disposed between the magnetic domain and the laterally adjacent non-magnetic region wherein the exchange spring structure comprises implanted ions.

Abstract: An example magnetic head includes a recording magnetic pole to generate a recording magnetic field; a spin torque oscillator formed in the vicinity of the recording magnetic pole; and a hard bias film for applying a magnetic field to the spin torque oscillator.

Abstract: An apparatus and associated method is presently disclosed for a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination that has a spacer layer disposed between a first and second ferromagnetic free layer. The lamination having at least one free layer with a shape feature that increases a scissoring angle between the free layers.

Abstract: A perpendicular magnetic recording medium of the present invention comprises a non-magnetic substrate, and at least a backing layer, an under layer, an intermediate layer and a perpendicular magnetic recording layer, which are sequentially laminated on the non-magnetic substrate, wherein the backing layer is formed of a soft magnetic film having an amorphous structure, the under layer contains a NiW alloy containing any one or both of Co and Fe, the W content of the NiW alloy is within a range from 3 to 10 atom %, the total of the Co and Fe contents of the NiW alloy is 5 atom % or more and less than 40 atom %, the saturation magnetic flux density Bs of the NiW alloy is 280 emu/cm3 or more, the thickness of the under layer is within a range from 2 to 20 nm, and the intermediate layer contains Ru or a Ru alloy.

Abstract: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

Abstract: According to one embodiment, a recording head for perpendicular recording, includes a main pole configured to apply a recording magnetic field to a recording layer of a recording medium, a return pole opposed to the main pole with a write gap therebetween and configured to form a magnetic circuit in conjunction with the main pole, a junction formed of a nonmagnetic body in which soft magnetic bodies are dispersed and configured to physically connect the main and return poles to each other, a coil configured to excite the magnetic flux in the magnetic circuit, a spin-torque oscillator arranged between the return pole and an end portion of the main pole and configured to produce a high-frequency magnetic field, and a current source configured to supply a current to the spin-torque oscillator through the return and main poles.

Abstract: A magnetic layered structure is presently disclosed comprising a pinned layer, a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer, a free layer, a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer, and a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer that tunes free layer bias to a desired level.

Abstract: According to one embodiment, a spin torque oscillator includes a field generation layer, a spin injection layer including a first layer and a second layer, and an interlayer interposed between the field generation layer and the spin injection layer, wherein the first layer is interposed between the second layer and the interlayer and includes a (001)-oriented Heuslar magnetic alloy or a (001)-oriented magnetic material having a body-centered cubic lattice structure.

Abstract: A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.

Abstract: The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.

Abstract: Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

Abstract: Disclosed is a method of manufacturing a magnetic recording medium having a clear magnetic recording pattern through a simple process. The method includes: forming a magnetic layer on the non-magnetic substrate; forming a mask layer which covers a surface of the magnetic layer; forming a resist layer on the mask layer; patterning the resist layer using a stamp; patterning the mask layer using the resist layer, forming a recess by partially removing a portion of the magnetic layer not covered by the mask layer; forming a non-magnetic layer which covers a surface where a recess is formed; flattening a surface of the non-magnetic layer until the mask layer is exposed; removing an exposed mask layer; removing a protruding portion of the non-magnetic layer; and forming a protective layer which covers a surface where the protruding portion was removed.

Abstract: A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

Abstract: A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.

Abstract: According to one embodiment, there is provided a magnetic head for a three-dimensional magnetic recording/reproducing apparatus, the head executing reading from or writing to a recording medium, utilizing a magnetic resonance, the medium including stacked layers formed of magnetic substances having different resonance frequencies, the head comprising a spin torque oscillation unit and auxiliary magnetic poles. The unit is operable to simultaneously oscillate at a plurality of frequencies to cause the magnetic resonance, when reading or writing. The magnetic poles assist the unit, when reading or writing. Further, according to another embodiment, there is provided a recording magnetic head using a high-frequency assist method and comprising a microwave magnetic field applying unit and a recording magnetic pole. The unit executes writing to a recording medium, and is formed of a plurality of spin torque oscillation elements having phases thereof synchronized. The magnetic pole assists the writing.

Abstract: According to one embodiment, a magnetic head includes a reproducing section. The reproducing section has a medium facing surface facing a magnetic recording medium and detects a direction of magnetization recorded in the medium. The reproducing section includes a first magnetic pinned layer, a second magnetic pinned layer, and a magnetic free layer. Directions of magnetizations of the first and second magnetic pinned layers are pinned. The second magnetic pinned layer is stacked with the first magnetic pinned layer in a first direction parallel to the medium facing surface. The magnetic free layer is provided between the first and second magnetic pinned layers. A direction of magnetization of the magnetic free layer is changeable. A length of the magnetic free layer along a second direction perpendicular to the medium facing surface is shorter than lengths of the first and second magnetic pinned layers along the second direction.

Abstract: A perpendicular magnetic read head having a balanced capacitive coupling with the substrate. The read head includes a magnetoresistive sensor with first and second magnetic, electrically conductive shields separated from a substrate by a layer of non-magnetic, electrically insulating material. A dummy magnetic shield is formed on the non-magnetic electrically insulating layer and is electrically connected with the second magnetic, electrically conductive shield. The dummy shield is formed to have a capacitive coupling with the substrate that matches the capacitive coupling of the first magnetic, electrically conductive shield with the substrate.

Abstract: A magnetic head comprises a main pole, a return pole and a magnetic damper. The main pole is configured to emit flux and the return pole is configured to return the flux to the main pole. The magnetic damper is inductively coupled to the return pole and comprises a first conductor spaced from a first side of the return pole, a second conductor spaced from a second side of the return pole and a third conductor connecting the first conductor to the second conductor.

Abstract: According to one embodiment, there is provided a magnetic recording head including a main pole, and a spin torque oscillator provided adjacent to the main pole and includes an oscillation layer including a first magnetic layer and a second magnetic layer and a third magnetic layer provided closer to the second magnetic layer and configured to inject a spin into the oscillation layer. The first magnetic layer has a saturation flux density of 1 T or more and 1.9 T or less.

Abstract: An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.

Abstract: An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in respective magnetization directions thereof, non-magnetic metal layers formed to abut both ends of the MR part in a width direction and separated from both ends of the MR part by respective insulation layers, each of the non-magnetic metal layers being in a two-layer structure configured with a first non-magnetic metal layer positioned at a lower side as a lower layer and a second non-metal layer positioned at an upper side as an upper layer are configured, and relationship R2<R1 is met, where R1 is a milling rate for the first non-magnetic metal layer that is the lower layer, and R2 is another milling rate for the second non-magnetic metal layer that is the upper layer.

Abstract: An MR element includes an MR stack disposed between first and second main shield portions, and a pair of side shields disposed on opposite sides of the MR stack in the track width direction. The first main shield portion includes a first exchange coupling shield layer that is exchange-coupled to a first antiferromagnetic layer. The second main shield portion includes a second exchange coupling shield layer that is exchange-coupled to a second antiferromagnetic layer. The MR stack includes a spacer layer, and first and second free layers with the spacer layer therebetween. The direction of magnetization of the first free layer is controlled by the first exchange coupling shield layer. The direction of magnetization of the second free layer is controlled by the second exchange coupling shield layer. Each side shield includes at least one shield-coupling magnetic layer that is in contact with and magnetically coupled to one of the first and second exchange coupling shield layers.

Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths <50 nm when PMA is greater than the FL self-demag field. Effective bias field is rather insensitive to sensor aspect ratio which makes tall stripe and narrow width sensors a viable approach for high RA TMR configurations. Side shields may be extended below the seed layer plane.

Abstract: A MR sensor includes a first shielding layer, a second shielding layer, a MR element formed therebetween, and a pair of hard magnet layers respectively placed on two sides of the MR element. The MR element comprises an AFM layer formed on the first shielding layer, a pinned layer formed on the AFM layer and a free layer formed between the pinned layer and the second shielding layer. The free layer is funnel-shaped, which having a first edge facing the air bearing surface and a second edge opposite the first edge, and the first edge has a narrower width than that of the second edge. The structure of the MR sensor can improve MR height control performance, and improve the ESD performance and decrease the PCN and RTN and, in turn, get a more stable performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

Abstract: Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack.

Abstract: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface by the stripe height distance. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

Abstract: A low track pitch write module and bidirectional tape head for writing and/or reading data on a magnetic recording tape. The write module and tape head have a tape bearing surface for engaging the magnetic recording tape and plural write elements. The write elements are arranged so that the write gaps of adjacent write elements are spaced from each other by not more than approximately one write gap width, while being generally aligned along an axis that is perpendicular to a direction of movement of the magnetic recording tape. The write elements may have a planar or vertical construction comprising plural thin film layers oriented in generally parallel or perpendicular relationship with the tape bearing surface. One or more read element arrays may also be provided.

Abstract: A reading element of a magnetic head has a first magnetoresistive effect part (first MR part) and a second magnetoresistive effect part (second MR part), an electrical resistance of the first MR part changing according to an external magnetic field applied to a first magnetic field sense area, an electrical resistance of the second MR part changing according to an external magnetic field applied to a second magnetic field sense area. A width of the second magnetic field sense area in a track width direction of the recording medium is larger than a width of the first magnetic field sense area in the track width direction, and a phase of change in the electrical resistance of the second MR part with respect to the external magnetic field substantially reverses to or substantially the same as a phase in the electrical resistance of the first MR part.

Abstract: A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to <50 nm without breakage. Finally, a trailing shield is formed on the STO.

Abstract: A magnetic data storage medium may include a substrate, a magnetic recording layer, a protective carbon overcoat, and a monolayer covalently bound to carbon atoms adjacent a surface of the protective carbon overcoat. According to this aspect of the disclosure, the monolayer comprises at least one of hydrogen, fluorine, nitrogen, oxygen, and a fluoro-organic molecule. In some embodiments, a surface of a read and recording head may also include a monolayer covalently bound to carbon atoms of a protective carbon overcoat.

Abstract: In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

Abstract: A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low ? in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb having a (+) ? value. FL2 may be CoFe, NiFe, or alloys thereof having a (?) ? value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.

Abstract: A magnetic layer for writing incorporates: a pole layer having an end face located in a medium facing surface; and an upper yoke layer. A first magnetic layer for flux concentration is connected to the pole layer at a location away from the medium facing surface, and passes a magnetic flux corresponding to a magnetic field generated by a first coil. A second magnetic layer for flux concentration is connected to the upper yoke layer at a location away from the medium facing surface, and passes a magnetic flux corresponding to a magnetic field generated by a second coil. A nonmagnetic layer is disposed between the pole layer and the upper yoke layer. The upper yoke layer is connected to the pole layer at a location closer to the medium facing surface than the nonmagnetic layer.

Abstract: A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof, and a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the insulating barrier layer. The MTJT device switches a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region.

Abstract: According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0?x?15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.

Abstract: A spin torque magnetoresistive sensor having a very small gap thickness. The sensor operates by measuring the change in frequency of a spin torque induced magnetic oscillation in magnetic layers of the sensor to detect the presence of a magnetic field. The sensor includes a pair of free magnetic layers that are antiparallel coupled by a thin non-magnetic coupling layer there-between. The sensor does not include a pinned layer structure nor an associated AFM pinning layer, which allows the sensor to be constructed much thinner than prior art sensors.

Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

Abstract: A microwave-assisted magnetic recording (MAMR) write head and system has a spin-torque oscillator (STO) located between the write pole of the write head and a trailing shield that alters the write field from the write pole. The STO is a stack of layers whose planes lie generally parallel to the X-Y plane of an X-Y-Z coordinate system, the stack including a ferromagnetic polarizer layer, a free ferromagnetic layer, and a nonmagnetic electrically conductive spacer between the polarizer layer and the free layer. In the presence of the write field from the write pole the polarizer layer has its magnetization oriented at an angle between 20 and 80 degrees, preferably between 30 and 70 degrees, with the Z-axis. In the presence of a direct electrical current through the STO stack, the free layer magnetization rotates or precesses about the Z-axis with a non-zero angle to the Z-axis.

Abstract: A trilayer magnetoresistive sensor includes first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.

Abstract: A magnetic recording head includes a write pole and a first permanent magnet. The write pole has a write pole tip, a leading edge, a trailing edge, a first side and a second side. The first permanent magnet is located either at the trailing edge of the write pole, the first side of the write pole or at the second side of the write pole. The first permanent magnet has a magnetization orientation that is changed in relation to a field of the write pole.

Abstract: The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

Abstract: An apparatus and associated method for a magnetic shield structure for data transduction from a recordable media in a data storage device. Various embodiments of the present invention are generally directed to a data transducer and a magnetic shield structure comprising a write shield magnetic material constructed of exchange decoupled material.

Abstract: Write enhancement circuitry on the head carrier of a magnetic recording disk drive provides additional write current overshoot beyond that provided by the write driver circuitry. An enhancement capacitor is formed with a dielectric layer between two layers of electrically-conductive magnetically-permeable shield material that serve as the capacitor plates. The write enhancement circuitry may also include an enhancement resistor. The enhancement capacitor and resistor are connected between the two terminals on the head carrier that connect to the write head coil. The capacitor and resistor are fabricated on the head carrier at the same time and in the same process as the read head. The first and second capacitor plates are generally coplanar with and formed of the same electrically-conductive magnetically-permeable material that forms the first and second magnetic shields for the read head.

Abstract: A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

Abstract: A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)X, (Co/NiFe)X, (Co/NiCo)X, (CoFe/NiFe)X, or (CoFe/NiCo)X composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.