Abstract: A one-way teletext data transmission system is an improvement over a known eletext system sold under the trademark "ANTIOPE" which transmits data having error correction and ciphering. The length of the transmitted data pack is always the maximum pack length and the value of the format byte is nil. A wire is connected from every channel to its individually associated coupler. That wire may be at either of the binary levels "1" or "0". The coupler comprises a first switch for switching between a counter and a memory. The memory stores a format byte, the value of which is nil. A second switch connects the memory to a data memory when any data packet transmission occurs, if the wire is at a predetermined binary level "1". The reception equipment is similar.
Type:
Grant
Filed:
May 10, 1982
Date of Patent:
January 29, 1985
Assignee:
L'Etat Francais, Represente par Le Ministre des P.T.A. (Centre National D'E t
Abstract: By using a nano-scale patterning process, a dislocation defect density of a GaN epitaxy layer can be further reduced. This is because the nano-scale epitaxy structure dimension is advantageous to the reduction of the strain energy accumulated by mismatched lattices, thereby decreasing the possibility of generating defects. It is verified that the nano-scale patterning process can effectively decrease the dislocation defect density of the GaN epitaxial layer on a sapphire substrate. Considering uniformity and reproducibility on the application of the large-size wafer, the invention has utilized the soft mask NIL patterning technology to successfully implement the uniform deposition and position control of the InAs quantum dot on a GaAs substrate. This further utilizes the NIL technology in conjunction with dry-etching to perform the nano-scale patterning on a heterogeneous substrate, such as Si, sapphire or the like.
Abstract: Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed.
Type:
Application
Filed:
January 16, 2019
Publication date:
August 1, 2019
Inventors:
David Bowie CRUICKSHANK, Rickard Paul O'DONOVAN, Iain Alexander MACFARLANE, Brian MURRAY, Michael David HILL