Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.
Type:
Grant
Filed:
April 11, 2011
Date of Patent:
March 19, 2013
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
Abstract: Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
Type:
Application
Filed:
September 24, 2010
Publication date:
October 25, 2012
Inventors:
Bozhi Tian, Ping Xie, Thomas J. Kempa, Charles M. Lieber, Itzhaq Cohen-Karni, Quan Qing, Xiaojie Duan
Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
Type:
Grant
Filed:
June 2, 2010
Date of Patent:
June 7, 2011
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
Abstract: Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
Type:
Grant
Filed:
September 24, 2010
Date of Patent:
March 29, 2016
Assignee:
President and Fellows of Harvard College
Inventors:
Bozhi Tian, Ping Xie, Thomas J. Kempa, Charles M. Lieber, Itzhaq Cohen-Karni, Quan Qing, Xiaojie Duan
Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
Type:
Grant
Filed:
October 17, 2006
Date of Patent:
June 10, 2008
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenji Liang
Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
Type:
Grant
Filed:
February 27, 2008
Date of Patent:
November 17, 2009
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
Type:
Grant
Filed:
September 30, 2009
Date of Patent:
March 22, 2011
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
Type:
Grant
Filed:
December 15, 2004
Date of Patent:
August 14, 2007
Assignee:
President & Fellows of Harvard College
Inventors:
Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
Abstract: Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.
Type:
Grant
Filed:
February 26, 1996
Date of Patent:
April 27, 1999
Assignee:
President and Fellows of Harvard College
Abstract: A method is described for multiplexed detection of polymorphic sites and direct determination of haplotypes in DNA fragments, DNA, and genomic DNA, using single-walled carbon nanotube (SWNT) atomic force microscopy (AFM) probes. This technique has applications for haplotyping in population-based genetic disease studies and other genomic screening.
Type:
Application
Filed:
September 12, 2001
Publication date:
October 10, 2002
Inventors:
Charles M. Lieber, Adam T. Woolley, Jong-In Hahm, David Housman
Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
Type:
Application
Filed:
March 21, 2006
Publication date:
December 6, 2007
Applicant:
President and Fellows of Harvard College
Inventors:
Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
Abstract: A nanoscale carbide article consisting essentially of covalently bounded elements M1, M2, and C having the molar ratio M1:M2:C::1:y:x, wherein the article has an aspect ratio of between 10 and 1000 and has a shorter axis of between 1 and 40 nanometers.
Type:
Grant
Filed:
June 7, 1995
Date of Patent:
February 20, 2001
Assignee:
President and Fellows of Harvard College
Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
Type:
Application
Filed:
June 30, 2005
Publication date:
August 10, 2006
Applicant:
President and Fellows of Harvard College
Inventors:
Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.
Type:
Grant
Filed:
September 18, 2001
Date of Patent:
April 6, 2004
Assignee:
President and Fellows of the Harvard College
Inventors:
Jason H. Hafner, Chin Li Cheung, Charles M. Lieber
Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.
Type:
Application
Filed:
January 17, 2003
Publication date:
October 23, 2003
Applicants:
CALIFORNIA INSTITUTE OF TECHNOLOGY, PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Abstract: A memory array comprising nanoscale wires is disclosed. The nanoscale wires are addressed by means of controllable regions axially and/or radially distributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires and microscale wires. In a two-dimensional embodiment, memory locations are defined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires located in different vertical layers.
Type:
Application
Filed:
July 24, 2003
Publication date:
June 17, 2004
Inventors:
Andre DeHon, Charles M. Lieber, Patrick D. Lincoln, John E. Savage
Abstract: Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.
Type:
Grant
Filed:
June 19, 2007
Date of Patent:
April 5, 2011
Assignee:
President and Fellows of Harvard College
Inventors:
Hongkun Park, Charles M. Lieber, Jeffrey J. Urban, Qian Gu, Wan Soo Yun
Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.
Type:
Grant
Filed:
January 17, 2003
Date of Patent:
July 4, 2006
Assignees:
California Institute of Technology, President and Fellows of Harvard College
Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.
Type:
Grant
Filed:
January 31, 2006
Date of Patent:
March 3, 2009
Assignees:
California Institute of Technology, President and Fellows of Harvard College
Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
Type:
Grant
Filed:
April 11, 2012
Date of Patent:
June 25, 2013
Assignee:
President and Fellows of Harvard College
Inventors:
Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim