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  • Optical Fibers Functionalized with Photonic Crystal Resonant Optical Structures
    Publication number: 20130039616
    Abstract: A photonic crystal (PC) device including one or more resonant optical structures defined by the photonic crystal structure is affixed to the end face of an optical fiber. The PC device is fabricated on a separate substrate, and then affixed to the fiber end face. This transfer can be facilitated by device templates which are laterally supported by tabs after an undercut etch. The tabs can be designed to break during transfer to the fiber, thereby facilitating transfer. Registration marks and/or the use of device templates having the same diameter as the fiber can be used to provide lateral alignment of the fiber to the resonant optical structures. Such alignment may be needed to provide optical coupling between the fiber and the resonant optical structures.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 14, 2013
    Inventors: Gary Shambat, Jelena Vuckovic
  • Optical microcavity emitter arrangements and methods therefor
    Patent number: 7778296
    Abstract: Optical microcavity arrangements and approaches facilitate a variety of applications. According to an example embodiment of the present invention, an optical microcavity arrangement includes a microcrystal structure having a plurality of optical cavities therein to facilitate the control of light. Emitters such as colloidal quantum dots are optically coupled to the optical cavities by attaching or otherwise arranging a material, which includes the emitters, to the optical microcavity arrangement. In many applications, the emitters couple photons of a wavelength in a range of wavelengths selectively passed by the optical cavities, and are amenable to operation at relatively high temperatures (e.g., at about room temperature or higher), which is useful for a variety of applications.
    Type: Grant
    Filed: May 11, 2007
    Date of Patent: August 17, 2010
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Jelena Vuckovic, Ilya Fushman, Dirk Robert Englund
  • Biological cell nanocavity probes
    Patent number: 9310352
    Abstract: An optical fiber is combined with a photonic crystal structure (PCS) that is optically coupled to the optical fiber. The fiber has an exposed fiber surface, and the PCS is affixed to the optical fiber and disposed on or in proximity to the exposed fiber surface. The PCS includes an elongate probe member configured for biological probing. The elongate probe member includes an optical resonant cavity. In an experiment, this was accomplished using an optical fiber tip with a semiconductor template attached to its side face. The semiconductor structure had a thin, needle-like tip (including a nanobeam cavity) which can be suitably inserted inside (or broken off inside) a biological cell without causing cytotoxicity.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: April 12, 2016
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Gary Shambat, Jelena Vuckovic
  • Optical fibers functionalized with photonic crystal resonant optical structures
    Patent number: 9588254
    Abstract: A photonic crystal (PC) device including one or more resonant optical structures defined by the photonic crystal structure is affixed to the end face of an optical fiber. The PC device is fabricated on a separate substrate, and then affixed to the fiber end face. This transfer can be facilitated by device templates which are laterally supported by tabs after an undercut etch. The tabs can be designed to break during transfer to the fiber, thereby facilitating transfer. Registration marks and/or the use of device templates having the same diameter as the fiber can be used to provide lateral alignment of the fiber to the resonant optical structures. Such alignment may be needed to provide optical coupling between the fiber and the resonant optical structures.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: March 7, 2017
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Gary Shambat, Jelena Vuckovic
  • Ultrafast and ultralow threshold single emitter optical switch
    Publication number: 20100119193
    Abstract: Electrical control of the emitter of a coupled quantum emitter-resonant cavity structure is provided. Electrodes are disposed near a semiconductor quantum dot coupled to a semiconductor optical cavity such that varying an applied bias at the electrodes alters an electric field at the quantum dot. Optical input and output ports are coupled to the cavity, and an optical response of the device relates light emitted from the output port to light provided to the input port. Altering the applied bias at the electrodes is capable of altering the optical response. Preferably, the closest electrode to the cavity is disposed between or away from angular lobes of the cavity mode, to reduce loss caused by the proximity of electrode to cavity. The present approach is applicable to both waveguide-coupled devices and non-waveguide devices.
    Type: Application
    Filed: November 12, 2009
    Publication date: May 13, 2010
    Inventors: Dirk Englund, Andrei Faraon, Jelena Vuckovic, IIya Fushman
  • Coupled photonic crystal resonator array arrangements and applications
    Patent number: 7206488
    Abstract: Light is processed and, in some instances, generated using an approach involving a photonic crystal resonator arrangement. According to an example embodiment, a photonic crystal resonator array includes an array of defect locations configured for controlling the group velocity of light passing through the photonic crystal resonator array. In one implementation, holes are selectively formed in a membrane, with certain periodic locations in the membrane being substantially free of holes. In other implementations, certain periodic locations as discussed above are characterized by holes having a relatively differently-shaped opening, relative to a plurality of the holes. Still other implementations involve optical delay components, lasers, sensors and other devices implemented with a photonic crystal resonator array.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: April 17, 2007
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Hatice Altug, Jelena Vuckovic
  • Ultrafast and ultralow threshold single emitter optical switch
    Patent number: 8355606
    Abstract: Electrical control of the emitter of a coupled quantum emitter-resonant cavity structure is provided. Electrodes are disposed near a semiconductor quantum dot coupled to a semiconductor optical cavity such that varying an applied bias at the electrodes alters an electric field at the quantum dot. Optical input and output ports are coupled to the cavity, and an optical response of the device relates light emitted from the output port to light provided to the input port. Altering the applied bias at the electrodes is capable of altering the optical response. Preferably, the closest electrode to the cavity is disposed between or away from angular lobes of the cavity mode, to reduce loss caused by the proximity of electrode to cavity. The present approach is applicable to both waveguide-coupled devices and non-waveguide devices.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: January 15, 2013
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Dirk Englund, Andrei Faraon, Jelena Vuckovic, Ilya Fushman
  • Crossed nanobeam structure for a low-threshold germanium laser
    Patent number: 9595812
    Abstract: A crossed nanobeam structure for strain engineering in semiconductor devices is provided. For example, such a structure can be used for a low-threshold germanium laser. While the photonic crystal nanobeam enables light confinement in a subwavelength volume with small optical loss, another crossing nanobeam induces high tensile strain in the small region where the optical mode is tightly confined. As maintaining a small optical loss and a high tensile strain reduces the required pumping for achieving net optical gain beyond cavity losses, this technique can be used to develop an extremely low-threshold Ge laser source. Moreover, the structure can be easily integrated into electronic and photonic circuits.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: March 14, 2017
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Donguk Nam, Jan A. Petykiewicz, Devanand S. Sukhdeo, Shashank Gupta, Jelena Vuckovic, Krishna C. Saraswat
  • Surface plasmon enhanced light emitting diode and method of operation for the same
    Patent number: 6534798
    Abstract: The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than &lgr;/2 and is sandwiched between two metal films. A periodic pattern is defined in the top semitransparent metal layer by lithography with the result that it efficiently couples out the light emitted from the semiconductor and simultaneously enhances the spontaneous emission rate. Extraction efficiencies of up to 35% and Purcell factors of up to 4.5 are obtainable. Photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers are obtained. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.
    Type: Grant
    Filed: September 6, 2000
    Date of Patent: March 18, 2003
    Assignee: California Institute of Technology
    Inventors: Axel Scherer, Jelena Vuckovic, Marko Loncar
  • Photonic crystal microcavities for strong coupling between an atom and the cavity field and method of fabricating the same
    Patent number: 6466709
    Abstract: Optical microcavities based on two dimensional arrays of holes defined in photonic crystals are optimized for maximum Q factors and minimum mode volume. They can also be used for strong coupling between the cavity field and an atom trapped within a defect of the photonic crystals, or for tunable filters if the holes are filled with electro-optical polymers. In one embodiment the Q factor of a cavity is increased by elongation of a plurality of holes in at least one row in a predetermined direction. Modal structures of microcavities, as well as quality factors, mode volumes, symmetry properties and radiation patterns of localized defect modes as a function of the slab thickness and parameters of photonic crystal and defects are illustrated.
    Type: Grant
    Filed: May 2, 2001
    Date of Patent: October 15, 2002
    Assignee: California Institute of Technology
    Inventors: Axel Scherer, Jelena Vuckovic, Marko Longcar, Hideo Mabuchi
  • Practical electrically pumped photonic crystal nanocavity
    Publication number: 20110248242
    Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits.
    Type: Application
    Filed: April 5, 2011
    Publication date: October 13, 2011
    Inventors: Bryan Ellis, Jelena Vuckovic, Ilya Fushman
  • Serpentine Optical Phased Array with Dispersion Matched Waveguides
    Publication number: 20230258861
    Abstract: A dispersion-engineered 2D optical phased array device includes optical slow light waveguides [202, 208, 218] arranged parallel to each other; waveguide bends [206, 216] optically coupling ends of adjacent waveguides of the optical slow light waveguides to form a serpentine optical configuration; wherein the optical slow light waveguides comprise first waveguides of a first waveguide type and second waveguides of a second waveguide type, wherein the first waveguides and the second waveguides are arranged adjacent to each other and alternate with each other; wherein the optical slow light waveguides comprise phased array sections forming a phased array [214], wherein first waveguides and second waveguides have dispersion slopes of opposite sign and the same group index; wherein the optical slow light waveguides comprise slow light delay waveguide sections [210] that provide a delay between adjacent waveguides.
    Type: Application
    Filed: July 26, 2021
    Publication date: August 17, 2023
    Inventors: Dries J. F. Vercruysse, Jelena Vuckovic
  • Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
    Publication number: 20070183471
    Abstract: A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index spacer [400] sandwiched between two quarter wave stacks [410, 420]. The low-index spacer has a high-index subspacer layer [470] positioned at its center. The subspacer layer has a thickness smaller than a quarter wavelength. As a result, the electric field intensity remains a maximum at the center of the spacer where the high-index subspacer is positioned. A quantum dot or other active region [480] may be embedded within the subspacer [470]. The microcavity devices provide, for example, single photon sources, single dot lasers, low-threshold quantum dot or quantum well lasers, or devices for strong coupling between a single quantum dot and the cavity field which can be used as components of photonic integrated circuits, quantum computers, quantum networks, or quantum cryptographic systems.
    Type: Application
    Filed: July 30, 2003
    Publication date: August 9, 2007
    Inventors: Jelena Vuckovic, Yoshihisa Yamamoto
  • Practical electrically pumped photonic crystal nanocavity
    Patent number: 8471352
    Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: June 25, 2013
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Bryan Ellis, Jelena Vuckovic, Ilya Fushman
  • Ultrafast photonic crystal cavity single-mode light-emitting diode
    Patent number: 8829638
    Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. High speed modulation of a single mode LED is demonstrated in a third experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: September 9, 2014
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Gary Shambat, Bryan Ellis, Jelena Vuckovic
  • Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
    Patent number: 7292613
    Abstract: A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index spacer [400] sandwiched between two quarter wave stacks [410, 420]. The low-index spacer has a high-index subspacer layer [470] positioned at its center. The subspacer layer has a thickness smaller than a quarter wavelength. As a result, the electric field intensity remains a maximum at the center of the spacer where the high-index subspacer is positioned. A quantum dot or other active region [480] may be embedded within the subspacer [470]. The microcavity devices provide, for example, single photon sources, single dot lasers, low-threshold quantum dot or quantum well lasers, or devices for strong coupling between a single quantum dot and the cavity field which can be used as components of photonic integrated circuits, quantum computers, quantum networks, or quantum cryptographic systems.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: November 6, 2007
    Assignees: The Board of Trustees of the Leland Stanford Junior University, Japan Science and Technology
    Inventors: Jelena Vuckovic, Yoshihisa Yamamoto
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