Search Patents
  • Fabrication of nanotube microscopy tips
    Patent number: 6716409
    Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: April 6, 2004
    Assignee: President and Fellows of the Harvard College
    Inventors: Jason H. Hafner, Chin Li Cheung, Charles M. Lieber
  • Methods of forming nanoscopic wire-based devices and arrays
    Patent number: 7399691
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: July 15, 2008
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Nanoscopic wire-based devices and arrays
    Patent number: 6781166
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: August 24, 2004
    Assignee: President & Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Nanoscale coherent optical components
    Publication number: 20040213307
    Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.
    Type: Application
    Filed: December 11, 2003
    Publication date: October 28, 2004
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Xiangfeng Duan, Yu Huang, Ritesh Agarwal
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Patent number: 7211464
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: May 1, 2007
    Assignee: President & Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Nonoscopic wired-based devices and arrays
    Publication number: 20110174619
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: July 13, 2006
    Publication date: July 21, 2011
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Publication number: 20100093158
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: April 15, 2010
    Applicant: President and fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • THREE-DIMENSIONAL NETWORKS COMPRISING NANOELECTRONICS
    Publication number: 20160027846
    Abstract: The present invention generally relates to nanoscale wires and three-dimensional networks or structures comprising nanoscale wires. For example, certain embodiments are directed to three-dimensional structures comprising nanoscale wires. The structures may be porous and define electrical networks wherein the nanoscale wires can be determined or controlled. Other materials, such as inorganic materials, polymers, fabrics, etc., may be disposed within the three-dimensional structure, and in some embodiments, such that the three-dimensional structure is embedded within the material. The nanoscale wires may thus be used, for example, as sensors within the material. Other embodiments of the invention are generally directed to the use of such articles, methods of forming such articles, kits involving such articles, or the like.
    Type: Application
    Filed: April 3, 2014
    Publication date: January 28, 2016
    Inventors: Charles M. Lieber, Jia Liu, Chong Xie, Xiaochuan Dai
  • Nanoscale coherent optical components
    Patent number: 7254151
    Abstract: This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.
    Type: Grant
    Filed: December 11, 2003
    Date of Patent: August 7, 2007
    Assignee: President & Fellows of Harvard College
    Inventors: Charles M. Lieber, Xiangfeng Duan, Yu Huang, Ritesh Agarwal
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
    Patent number: 7915151
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: March 29, 2011
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • High-Resolution Molecular Sensor
    Publication number: 20140166487
    Abstract: A solid state molecular sensor having an aperture extending through a thickness of a sensing material is configured with a continuous electrically-conducting path extending in the sensing material around the aperture. A supply reservoir is connected to provide a molecular species, having a molecular length, from the supply reservoir to an input port of the aperture. A collection reservoir is connected to collect the molecular species from an output port of the aperture after translocation of the molecular species from the supply reservoir through the sensing aperture. The sensing aperture has a length between the input and output ports, in the sensing material, that is substantially no greater than the molecular length of the molecular species from the supply reservoir. An electrical connection to the sensing material measures a change in an electrical characteristic of the sensing material during the molecular species translocation through the aperture.
    Type: Application
    Filed: February 21, 2014
    Publication date: June 19, 2014
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Qihua Xiong, Ping Xie, Ying Fang
  • High-resolution molecular sensor
    Patent number: 10119955
    Abstract: A solid state molecular sensor having an aperture extending through a thickness of a sensing material is configured with a continuous electrically-conducting path extending in the sensing material around the aperture. A supply reservoir is connected to provide a molecular species, having a molecular length, from the supply reservoir to an input port of the aperture. A collection reservoir is connected to collect the molecular species from an output port of the aperture after translocation of the molecular species from the supply reservoir through the sensing aperture. The sensing aperture has a length between the input and output ports, in the sensing material, that is substantially no greater than the molecular length of the molecular species from the supply reservoir. An electrical connection to the sensing material measures a change in an electrical characteristic of the sensing material during the molecular species translocation through the aperture.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: November 6, 2018
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Qihua Xiong, Ping Xie, Ying Fang
  • Nanoscopic wired-based devices and arrays
    Publication number: 20040188721
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 30, 2004
    Applicant: President and Fellows of Harvard University
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Fabrication of nanotube microscopy tips
    Publication number: 20020112814
    Abstract: A method of fabricating SWNT probes for use in atomic force microscopy is disclosed. In one embodiment, the SWNT's are fabricated using a metallic salt solution. In another embodiment, the SWNT's are fabricated using metallic colloids.
    Type: Application
    Filed: September 18, 2001
    Publication date: August 22, 2002
    Inventors: Jason H. Hafner, Chin Li Cheung, Charles M. Lieber
  • High-resolution molecular sensor
    Patent number: 8698481
    Abstract: A solid state molecular sensor having an aperture extending through a thickness of a sensing region is configured with a sensing region thickness that corresponds to the characteristic extent of at least a component of a molecular species to be translocated through the aperture. A change in an electrical characteristic of the sensing region is measured during the molecular species translocation. The sensor can be configured as a field effect transistor molecular sensor. The sensing region can be a region of graphene including an aperture extending through a thickness of the graphene.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: April 15, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Qihua Xiong, Ping Xie, Ying Fang
  • Nanoscopic wire-based devices and arrays
    Publication number: 20080116491
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: November 21, 2005
    Publication date: May 22, 2008
    Applicant: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Patent number: 8153470
    Abstract: A method for selectively aligning and positioning semiconductor nanowires on a substrate by providing a substrate; patterning electrodes on a surface of the substrate; conditioning the surface of the substrate to attach semiconductor nanowires to the surface by functionalizing the surface with a first functional group having an affinity for the semiconductor nanowires; providing an environment in contact with the electrodes, the environment having suspended therein the semiconductor nanowires; and providing an electric field between the electrodes, thereby causing the nanowires in the environment to align between and electrically connect the electrodes to thereby form a semiconducting channel between the electrodes.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: April 10, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Patent number: 7476596
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: January 13, 2009
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Methods of forming nanoscopic wire-based devices and arrays
    Patent number: 7172953
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: February 6, 2007
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
    Patent number: 7666708
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 23, 2010
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
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