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  • Patent number: 9069365
    Abstract: Embodiments for methods, apparatus and systems for operating a voltage regulator are disclosed. One embodiment of the voltage regulator generates a switching voltage through controlled closing and opening of a series switch element and a shunt switch element. The voltage regulator further includes a switched output filter that includes a plurality of capacitors for filtering the switching voltage and generating an output voltage. A mode controller is operative to disconnect at least one of the plurality of capacitors upon receiving a first indicator, where disconnecting causes the at least one of the plurality of capacitors to electrically float, wherein while the at least one capacitor is disconnected the output voltage is changed from a first value to a second value, return the output voltage to a first value or a third value upon receiving a second indicator, and reconnect the at least one of the plurality of capacitors.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: June 30, 2015
    Assignee: R2 Semiconductor, Inc.
    Inventors: James E.C. Brown, Daniel Dobkin, Pablo Moreno Galbis, Cory Severson, David Fisher
  • Patent number: 9035625
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage through controlled closing and opening of a series switch element and shunt switch element. This method includes closing the series switch element during a first period, the series switch element comprising a plurality of series switch elements segments. The method includes applying a switching gate voltage to gates of series switching transistors of a subset of the plurality of series switch elements segments of the series switch element, wherein only the series switching transistors of the subset of the plurality of series switch elements segments of the series switch element turn on, while series protection transistor of more than the subset of the plurality of series switch elements segments of the series switch element turn on. The shunt switch element during is closed during a second period.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: May 19, 2015
    Assignee: R2 Semiconductor
    Inventors: Lawrence M. Burns, James E. C. Brown
  • Publication number: 20110148368
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage though controlled closing and opening of a series switch element and shunt switch element, the series switch element being connected between a first voltage supply and a common node, and the shunt switch being connected between the common node and a second supply voltage. The series switch element includes an NMOS series switching transistor stacked with an NMOS series protection transistor, and closing the series switch element during a first period includes applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node.
    Type: Application
    Filed: December 23, 2009
    Publication date: June 23, 2011
    Applicant: R2 SEMICONDUCTOR, INC.
    Inventors: Lawrence M. Burns, David Fisher
  • Patent number: 8212536
    Abstract: Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage though controlled closing and opening of a series switch element and shunt switch element, the series switch element being connected between a first voltage supply and a common node, and the shunt switch being connected between the common node and a second supply voltage. The series switch element includes an NMOS series switching transistor stacked with an NMOS series protection transistor, and closing the series switch element during a first period includes applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: July 3, 2012
    Assignee: R2 Semiconductor, Inc.
    Inventors: Lawrence M. Burns, David Fisher
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