Search Patents
  • Patent number: 10207469
    Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: February 19, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Siyuan Tian
  • Patent number: 6143658
    Abstract: The present invention is directed to a device that has wires on at least two levels. The wires are either copper or a metal containing copper. At lease one via plug formed of copper or a metal containing copper is formed which electrically connects at least one wire on the first level with at least one wire on the second level. The device is fabricated under conditions that remove oxides and other metal that form on the exposed surface of the first level of metal during processing prior to the via plug being formed. The resulting interconnect between the first level of metal and the via plus is substantially non-oxidized copper or copper-containing metal.
    Type: Grant
    Filed: September 17, 1999
    Date of Patent: November 7, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Vincent Michael Donnelly, Jr., Kazuyoshi Ueno
  • Publication number: 20090283215
    Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
    Type: Application
    Filed: May 5, 2009
    Publication date: November 19, 2009
    Applicant: University of Houston
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
  • Patent number: 5467732
    Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
    Type: Grant
    Filed: May 21, 1993
    Date of Patent: November 21, 1995
    Assignee: AT&T Corp.
    Inventors: Vincent M. Donnelly, Jr., James A. McCaulley
  • Publication number: 20130256272
    Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jianping Zhao, Lee Chen, Vincent M. Donnelly, Demetre J. Economou, Merritt Funk, Radha Sundararajan
  • Patent number: 5229303
    Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: July 20, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Vincent M. Donnelly, Jr., James A. McCaulley
  • Patent number: 8030620
    Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
    Type: Grant
    Filed: May 5, 2009
    Date of Patent: October 4, 2011
    Assignee: University of Houston
    Inventors: Vincent M. Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
  • Patent number: 7883839
    Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: February 8, 2011
    Assignee: University of Houston
    Inventors: Vincent M Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
  • Patent number: 8968588
    Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: March 3, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Jianping Zhao, Lee Chen, Vincent M. Donnelly, Demetre J. Economou, Merritt Funk, Radha Sundararajan
  • Patent number: D669739
    Type: Grant
    Filed: July 18, 2011
    Date of Patent: October 30, 2012
    Assignee: Dart Industries Inc.
    Inventor: Vincent Jalet
  • Patent number: D686028
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: July 16, 2013
    Assignee: Technicolor Delivery Technologies
    Inventors: Vincent Mallet, Bruno Esteve, Kim Kisan
  • Patent number: D695046
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: December 10, 2013
    Assignee: The Coca-Cola Company
    Inventors: Vincent Voron, Christine Naples, Grayson Byrd
  • Patent number: D703469
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: April 29, 2014
    Assignee: The Coca-Cola Company
    Inventors: Vincent Voron, Christine Naples
  • Patent number: D741631
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: October 27, 2015
    Assignee: Spanx, Inc.
    Inventors: Vincent Bertault, Robert Kemp
  • Patent number: D762396
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: August 2, 2016
    Assignee: Revolution Display, LLC
    Inventors: Vincent M. Pace, Patrick Campbell
  • Patent number: D763007
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: August 9, 2016
    Assignee: Revolution Display, LLC
    Inventors: Vincent M. Pace, Patrick Campbell
  • Patent number: D763008
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: August 9, 2016
    Assignee: Revolution Display, LLC
    Inventors: Vincent M. Pace, Patrick Campbell
  • Patent number: D771383
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: November 15, 2016
    Inventor: Vasile Vincent
  • Patent number: D774333
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: December 20, 2016
    Assignee: Revolution Display, LLC
    Inventors: Vincent M. Pace, Patrick Campbell
  • Patent number: D793129
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: August 1, 2017
    Assignee: Spanx, Inc.
    Inventors: Vincent Bertault, Robert Kemp
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