Abstract: Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
Type:
Grant
Filed:
December 8, 2015
Date of Patent:
February 19, 2019
Assignee:
UNIVERSITY OF HOUSTON SYSTEM
Inventors:
Vincent M. Donnelly, Demetre J. Economou, Siyuan Tian
Abstract: The present invention is directed to a device that has wires on at least two levels. The wires are either copper or a metal containing copper. At lease one via plug formed of copper or a metal containing copper is formed which electrically connects at least one wire on the first level with at least one wire on the second level. The device is fabricated under conditions that remove oxides and other metal that form on the exposed surface of the first level of metal during processing prior to the via plug being formed. The resulting interconnect between the first level of metal and the via plus is substantially non-oxidized copper or copper-containing metal.
Type:
Grant
Filed:
September 17, 1999
Date of Patent:
November 7, 2000
Assignee:
Lucent Technologies Inc.
Inventors:
Vincent Michael Donnelly, Jr., Kazuyoshi Ueno
Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
Type:
Application
Filed:
May 5, 2009
Publication date:
November 19, 2009
Applicant:
University of Houston
Inventors:
Vincent M. Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
Type:
Grant
Filed:
May 21, 1993
Date of Patent:
November 21, 1995
Assignee:
AT&T Corp.
Inventors:
Vincent M. Donnelly, Jr., James A. McCaulley
Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
Type:
Application
Filed:
March 30, 2012
Publication date:
October 3, 2013
Applicant:
TOKYO ELECTRON LIMITED
Inventors:
Jianping Zhao, Lee Chen, Vincent M. Donnelly, Demetre J. Economou, Merritt Funk, Radha Sundararajan
Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
Type:
Grant
Filed:
December 13, 1991
Date of Patent:
July 20, 1993
Assignee:
AT&T Bell Laboratories
Inventors:
Vincent M. Donnelly, Jr., James A. McCaulley
Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
Type:
Grant
Filed:
May 5, 2009
Date of Patent:
October 4, 2011
Assignee:
University of Houston
Inventors:
Vincent M. Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
Type:
Grant
Filed:
December 4, 2006
Date of Patent:
February 8, 2011
Assignee:
University of Houston
Inventors:
Vincent M Donnelly, Demetre J. Economou, Paul Ruchhoeft, Lin Xu, Sri Charan Vemula, Manish Kumar Jain
Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
Type:
Grant
Filed:
March 30, 2012
Date of Patent:
March 3, 2015
Assignee:
Tokyo Electron Limited
Inventors:
Jianping Zhao, Lee Chen, Vincent M. Donnelly, Demetre J. Economou, Merritt Funk, Radha Sundararajan