Abstract: Embodiments include a process including providing a microwave radiation source and a processing chamber. The process includes generating a region of pure magnetic field from the microwave radiation in the processing chamber. A region of pure electric field from the microwave radiation is also generated. A material is positioned in the region of pure magnetic field while no portion of the material is positioned in the region of pure electric field, and the material is heated in the region of pure magnetic field. The heating may be conducted to sinter the material. The material may includes a metal.
Type:
Grant
Filed:
October 18, 2000
Date of Patent:
April 2, 2002
Assignee:
The Penn State Research Foundation
Inventors:
Rustum Roy, Jiping Cheng, Dinesh K. Agrawal
Abstract: Disclosed is a method, system, program, and data structure for managing background display information being installed on a computer system. Certain embodiments include at least one file set including install objects to install a computer program. The install objects include a graphics object containing background display information relating to the program. The install objects are processed to install the computer program, and the graphics object is processed to display the background display information on a display monitor. A copy of the graphics object is stored to a memory location, and the copy of the graphics file is maintained in the memory location after the program is installed onto the computer. Embodiments may also include a file set having uninstall objects to uninstall the computer program.
Type:
Grant
Filed:
March 29, 1999
Date of Patent:
March 19, 2002
Assignee:
International Business Machines Corporation
Abstract: A liquid colorant composition includes an acrylates/octylacrylamide copolymer, a cellulose material, alcohol and a colorant. The cellulose material may be hydroxypropylcellulose. Isostearyl alcohol and silica may be included in the composition to enhance properties such as the spreadability and feel of the composition on the lips. Additional additives such as fragrance and botanical extracts may also be added. Such compositions can be easily applied to the lips and offer long wear characteristics.
Abstract: Embodiments include a liquid colorant composition having an acrylates/octylacrylamide copolymer, a cellulose material, alcohol and a colorant. The cellulose material may be hydroxypropylcellulose. Isostearyl alcohol and silica may be included in the composition to enhance properties such as the spreadability and feel of the composition on the lips. Additional additives such as fragrance and botanical extracts may also be added. Such compositions can be easily applied to the lips and offer long wear characteristics.
Abstract: Embodiments include a disk drive having a drive motor assembly including at least one component selected from the group consisting of a rotatable hub, disk spacer, disk clamp, backiron, lower bearing bushing, and lower mounting flange. At least one of the components comprises a low sulfur outgassing free machining stainless steel material. The low sulfur outgassing free machining stainless steel material may include a free machining stainless steel that outgases sulfur at a rate insufficient to cause visually observable sulfide corrosion when tested by placing a copper strip into contact with the free machining stainless steel in an environment having a temperature of 50° C. and 90% relative humidity for a 7 day test period and then observing the copper strip.
Type:
Grant
Filed:
April 23, 1999
Date of Patent:
January 30, 2001
Assignee:
International Business Machines Corporation
Inventors:
Eduardo Gatmaitan Canlas, Andrew Keith Hanlon, Brad Vaughn Johnson, Keith Freeman Wood, Deborah L. Yaney
Abstract: A composition for a powdered hair dye includes an oxidative dye component, an oxidizing component and a thickening component. Other additives including protein derivatives and sucrose may also be utilized. The powdered dye composition may be placed into an applicator container so that the container is partially filled with the dye composition. Then when the user desires to use the dye, water is added to the container, the container shaken to mix the water and the powdered dye composition, and the mixture is then applied to the hair using an application mechanism which allows for easy and efficient application of the dye to the hair.
Abstract: A composition for a powdered hair dye includes an oxidative dye component, an oxidizing component and a thickening component. Other additives including protein derivatives and sucrose may also be utilized. The powdered dye composition may be placed into an applicator container so that the container is partially filled with the dye composition. Then when the user desires to use the dye, water is added to the container, the container shaken to mix the water and the powdered dye composition, and the mixture is then applied to the hair using an application mechanism which allows for easy and efficient application of the dye to the hair.
Abstract: Hemispherical-grained silicon (HSG-Si) is grown on polysilicon by plasma deposition. A wider range of substrate deposition temperatures can be used in the plasma deposition of HSG-Si than can be maintained in the low pressure chemical vapor deposition (LPCVD) of HSG-Si. The plasma deposition of HSG-Si can be performed in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system at input power levels ranging from 100-1500 W, at total pressures between 5-60 mTorr, and at substrate temperatures ranging from 200.degree.-500.degree. C. A mixture of silane and hydrogen gases at a dilution ratio of silane within the silane and hydrogen gas mixture H.sub.2 /(SiH.sub.4 +H.sub.2) between about 70-99% may be used in the ECR-CVD system. The polysilicon surface is cleaned of native oxides prior to plasma deposition of HSG-Si.
Abstract: A structure and a process for forming an improved bonding pad which resists bond pad peeling of between the bonding pad layer and the underlying layers. The method comprises forming plurality of anchor pads on said substrate surface in a bonding pad area. Next, a first insulating layer is formed over said substrate surface and the anchor pads. Vias are formed through the first insulating layer. The vias are filled with a second metal layer making a connection to the anchor pads and the first insulating layer is covered in the bonding pad area with the second metal layer. It is important that the via holes have a smaller cross sectional area than the anchor pads so that the combination of the anchor pads and the second metal form small "hooks" into the first insulating layer that hold the second metal (bonding pad layer) to the underlying layer.
Abstract: A structure and a process for forming an improved bonding pad which allows better bonding between a bond wire and a metal bonding pad. Stripes are formed on a substrate. A conformal dielectric layer, a conformal barrier layer and a metal layer are formed over the stripes. A passivation layer with a window is formed defining a bonding pad area. The stripes promote an irregular surface in the barrier and metal layers which reduce stress between the dielectric layer, the barrier layer and the metal layer. Also, the irregular surfaces increase the barrier metal adhesion to the dielectric layer, reduce bond pad peel off, and increase bonding yields.
Type:
Grant
Filed:
April 10, 1995
Date of Patent:
December 30, 1997
Assignee:
United Microelectronics Corporation
Inventors:
Liu Ming-Tsung, Bill Y. B. Hsu, Hsien-Dar Chung, Der-Yuan Wu
Abstract: A new photolithographic process using the method of photoresist double coating to fabricate fine lines with narrow spacing is described. A layer to be etched is provided overlying a semiconductor substrate. The layer to be etched is coated with a first layer of photoresist and baked. The first photoresist layer is exposed to actinic light through openings in a mask and developed to produce the desired first pattern on the surface of the first photoresist wherein the openings have a minimum width of the resolution limit plus two times the misalignment tolerance of the photolithography process. The layer to be etched is coated with a second photoresist layer where the layer to be etched is exposed within the openings in the first photoresist layer.
Abstract: A method of manufacture of a MOSFET device with a predetermined light positive or negative doping comprises forming a first mask upon said substrate. Dopant of a predetermined positive or negative variety is implanted through the mask. A second mask is formed over the openings in the first mask. The first mask is removed. Dopant of the opposite positive or negative variety is implanted into the openings in the second mask. The process forms a pattern of positive and negative wells in the substrate, and forms a guard ring of an opposite doping variety from the wells being protected formed in the substrate.
Abstract: Methods for heat treating goods to remove or prevent contaminants include the steps of identifying the contaminant or contaminants present and then heat treating the goods at a temperature in the range of 117.degree.-150.degree. F. Such heat treatment can be carried out on prepackaged, bulk quantities of contaminated or non-contaminated goods.
Abstract: A structure is provided comprising a semiconductor substrate having a first conductivity type, a buried source region having a second opposite conductivity type, and an epitaxial layer of the second conductivity type having a lower dopant concentration than the buried source region. Field oxide regions are formed at outer edges of the epitaxial layer. A well region of first conductivity type is implanted into the central portion of the epitaxial layer to define the active area. Trenches are etched through the well region into the buried source region. A first layer of silicon oxide is grown on the surface and within the trenches. Gate electrodes are formed by depositing a layer of polysilicon and etching back to leave the polysilicon layer only within the trenches. Ions of second conductivity type are implanted into the top portion of the well region to form drain regions. A second layer of silicon oxide is deposited over the top surfaces and planarized.