Abstract: In accordance with the invention, a plurality of elongated refractory bodies are laminated together by placing the bodies in close adjacency, exposing the adjacent bodies to a plasma torch heat source, and moving the bodies longitudinal past the torch at a nonzero average rate which includes a reciprocating (e.g., oscillatory) component to longitudinally spread the zone of heating. Where the bodies are a rod to be laminated within a hollow tube, it is advantageous to reduce the air pressure between the rod and tube, thereby eliminating potential contaminants and, at the same time, biasing the tube to collapse against the rod. This method is particularly useful in laminating overcladding tubes to core rods to form optical fiber preforms.

Abstract: Described is a plastic encapsulated electronic device having an integrated circuit unit, a lead frame and a plastic material encapsulating the IC unit and portions of the leads into a sealed package. Each of the leads includes an inner portion adjacent the IC unit, an outer portion laying in a different plane than the inner portion, and a central portion interconnecting the inner and the outer portions. The plastic enclosure is so formed that the outer portion of each lead, except for its lowermost flat surface and a short outermost section, is embedded in the plastic material. The bottom surface of the plastic enclosure is substantially coplanar with the lowermost flat surface of each lead. The short outermost portion of the outer lead portion extends beyond the plastic material for testing purposes. This arrangement provides for a robust encapsulation of the leads avoiding the prior problems of the prior art.

Abstract: Each memory cell in an SRAM array contains an auxiliary reading transistor connected across one of the transistors in each cell. A row read line controls the ON-OFF condition of this auxiliary reading transistor. In addition, each cell has two access transistors for connecting the cell to complementary column bit lines The ON-OFF condition of both of these access transistors is controlled by a row write line. Each cell has two power nodes, one connected to a power source such as VDD and the other connected to a column detector line that terminates in a current sensor. The state of the memory cell is sensed by this current sensor. In one embodiment, the power line that brings the voltage VDD to the cells is a column line; in another embodiment, it is a row line. Thus there are a total of four column lines and two row lines in the one embodiment, and a total of three column lines and three row lines in the other embodiment.

Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.

Abstract: Many devices, such as those based on III-V semiconductor materials, are produced utilizing gases such as arsine that require careful handling of compressed gas cylinders. This care has engendered a search for alternate approaches. It has been found that the use of electrochemically generated gases such as arsine yields an efficient, pure source of such gases without necessitating the storage of large gas quantities. Thus, a device fabrication procedure including in situ electrochemical generation of gases such as arsine is particularly useful.

Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.

Abstract: A procedure for producing an article such as an integrated circuit or a lithographic mask including the step of exposing and developing a resist material during a lithographic process is substantially improved by utilizing a specific technique. In particular, a prototypical plot is made based on typical conditions. Thereafter, this calibration is employable for developing the resist material even at substantially different environmental and processing conditions.

Abstract: A class of silicon-containing materials display excellent sensitivity in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.

Abstract: Many devices, such as those based on III-V semiconductor materials, are produced utilizing gases such as arsine that require careful handling of compressed gas cylinders. This care has engendered a search for alternate approaches. It has been found that the use of electrochemically generated gases such as arsine yields an efficient, pure source of such gases without necessitating the storage of large gas quantifies. Thus, a device fabrication procedure including in situ electrochemical generation of gases such as arsine is particularly useful.

Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for high conductivity (comparable to or higher than those attained by n-type doped polyacetylene). The fullerene materials are soluble in common solvents.

Abstract: The quality of soldering produced on devices such as printed circuit boards and multichip modules is significantly improved through use of a specific size distribution of solder particles. In particular, the solder includes a vehicle and solder particles of specific size. In general, an appropriate distribution of both large and small particles should be employed. Through this expedient short circuits and soldering defects in fine line devices are reduced.

Abstract: Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.

Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.

Abstract: Resist materials sensitive to actinic radiation are formed from an acid generator and a material sensitive to acid. The acid from the acid generator interacts with the acid sensitive material to produce a change in solubility. Particularly useful acid generators included benzyl and naphthylmethyl sulfones.

Abstract: Through the use of a specifically configured buried dielectric region, devices with strict design rules, e.g., design rules of 0.9 micrometers and less, are significantly improved. In particular, the recessed dielectric region, e.g., field oxide, separating device areas in an integrated circuit, either has a buried conducting shield surrounding the periphery of the oxide or has a configuration such that the upper surface of the dielectric is no more than 20 nm below the upper surface of the silicon forming the device active region. By insuring a suitable configuration, parasitic capacitance resulting in slower operation is considerably reduced while leakage currents are maintained at an acceptable level.

Abstract: The sensitivity and dry etching pattern control of chemically amplified resists used in the production of devices such as electronic devices is substantially enhanced while image quality is improved through use of a specific expedient. In particular, the resist material after coating on the device substrate, is treated, e.g., heated to sufficiently high temperatures, to remove a portion of the protective groups on the polymeric component of the resist. Generally, when removal up to approximately 90% of the protective groups for substituents such as t-butoxycarboxyl is effected through this procedure, sensitivities as good as 10 mJ/cm.sup.2 for an X-ray exposure (.lambda.=14.ANG.) have been achieved, and both the image quality and dry etching pattern control are improved.

Abstract: Ground noise associated with lead inductance in electronic systems containing multiple lead integrated circuits is substantially reduced by including, for each chip driver lead that carries a signal, a complementary lead which carries the the inverse of that signal. These balanced pairs are continued not only in the wire bonds and lead frame of the integrated circuit, but also through any connecting assembly such as a printed wiring board or multichip module to the associated balanced chip receivers.

Abstract: It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.

Abstract: Metals useful in the formation of hydrides for applications such as batteries are advantageously activated by a low temperature low pressure process. This process which is useful at room temperature and atmospheric pressure involves treating the metal such as LaNi.sub.5 with boron reducing agents such as NaBH.sub.4.

Abstract: The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.