Patents Represented by Attorney Bruce S. Schneider

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  • Smectic liquid crystals
    Patent number: 4613209
    Abstract: The use of a certain class of liquid crystal materials that exhibit a smectic C phase allows the production of a bistable liquid crystal display element. Such bistable display elements promote the use of matrix addressing for liquid crystal based elements in a display.
    Type: Grant
    Filed: March 23, 1982
    Date of Patent: September 23, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: John W. Goodby, Thomas M. Leslie
  • Aliphatic aromatization with intemetallic Group VIII-IIIA, IVA catalyst
    Patent number: 4612407
    Abstract: Supported intermetallic compounds are produced by a two-step process. In the first step, a supported metal is formed, for example, by solvating a metallic salt such as nickel nitrate and applying it to a support medium. The treated support body is then heated in the presence of a reducing agent to produce elemental metal. The supported metal is then treated with a reactive organometallic or metal hydride compound to yield a supported intermetallic compound. For example, supported elemental nickel is treated with hexamethyldisilane to produce supported nickel silicide.
    Type: Grant
    Filed: January 29, 1986
    Date of Patent: September 16, 1986
    Assignee: AT&T Laboratories
    Inventors: Lawrence H. Dubois, Ralph G. Nuzzo
  • Devices formed utilizing organic materials
    Patent number: 4611385
    Abstract: The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.
    Type: Grant
    Filed: April 23, 1984
    Date of Patent: September 16, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Stephen R. Forrest, Martin L. Kaplan, Paul H. Schmidt
  • Low temperature deposition of silicon oxides for device fabrication
    Patent number: 4597985
    Abstract: Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.
    Type: Grant
    Filed: April 15, 1985
    Date of Patent: July 1, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Edwin A. Chandross, Robert E. Dean, Gerald Smolinsky
  • Stabilization of PVC bodies
    Patent number: 4584241
    Abstract: The epoxy resin stabilizing systems in combination with cadmium containing stabilizers employed in PVC compounds are replaceable without affecting other properties of the polymer by utilizing a specific additive mixture. In particular, a complex ester of oleic acid and a diglycerol ester of oleic acid are employed in conjunction with a calcium-zinc composition. The resulting system yields excellent processing and long-term stability without significantly affecting other properties such as color stability and flame retardancy.
    Type: Grant
    Filed: April 6, 1984
    Date of Patent: April 22, 1986
    Assignees: AT&T Technologies, AT&T Bell Laboratories
    Inventors: Jae H. Choi, Larry E. Fortner, John J. Mottine, Jr., William C. Vesperman
  • Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation
    Patent number: 4581814
    Abstract: The efficacy of dielectrically isolated device formation on a substrate is substantially enhanced through a specific set of processing steps. In particular, before silicon oxide regions, e.g., gate oxide regions, are produced, bulk polycrystalline areas are heat treated to substantially increase their polycrystalline silicon grain size.
    Type: Grant
    Filed: December 13, 1984
    Date of Patent: April 15, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: George K. Celler, Pradip K. Roy, Donald G. Schimmel, Lee E. Trimble
  • Hydrothermal crystal growth processes
    Patent number: 4579622
    Abstract: High quality crystals of materials that are essentially silicon-free are produced in a low pressure hydrothermal growth process through a specific expedient. In particular, the aqueous solution utilized in the pressure vessel during growth is introduced in significantly larger quantities than previously thought to be acceptable.
    Type: Grant
    Filed: October 17, 1983
    Date of Patent: April 1, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Anthony J. Caporaso, Ernest D. Kolb, Robert A. Laudise
  • Optical information storage
    Patent number: 4579807
    Abstract: An optical disc including a medium having both a continuous phase and a non-continuous phase yields excellent contrast and stability for optical recording purposes. Exemplary of materials that form the desired multi-phase system are those produced by sputtering metals such as indium in an oxygen environment.
    Type: Grant
    Filed: April 6, 1984
    Date of Patent: April 1, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Greg E. Blonder, Arthur F. Hebard
  • Enhanced corrosion resistance of metal surfaces
    Patent number: 4579752
    Abstract: Metal surfaces are protected from corrosion by reaction with a silane. In the case of a clean metal surface, reaction with the silane produces an intermetallic compound that is subsequently oxidized to yield a surface layer of, for example, silicon oxide. In the situation where the metal has an oxide coating, the silane reacts directly with this coating to produce the protective surface.
    Type: Grant
    Filed: October 29, 1984
    Date of Patent: April 1, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Lawrence H. Dubois, Ralph G. Nuzzo
  • Deposition technique
    Patent number: 4574093
    Abstract: Deposited layers are advantageously obtained by utilizing a specific vapor deposition procedure. In this procedure, a substrate is positioned a relatively short distance from the source of a gas flow capable of producing the desired deposition. This gas flow is directed so that it contacts an interior region of the substrate and moves from the initial contact point to a point on the periphery of the substrate. Exemplary of such gas flow configurations is the positioning of a substrate at a small distance above a fused quartz frit through which the deposition gas flow is directed.
    Type: Grant
    Filed: December 30, 1983
    Date of Patent: March 4, 1986
    Assignee: AT&T Bell Laboratories
    Inventor: Herbert M. Cox
  • Chromatographic apparatus and process
    Patent number: 4563276
    Abstract: Through the intentional introduction of dopants into a glass structure by utilizing a procedure such as is involved in the modified chemical vapor deposition technique and through subsequent drawing of this structure into capillary tubes, a body is formed that is useful for chromatographic processes. For example, the production of an alumina-doped tube allows selective chromatographic separation of unsaturated organic compounds.
    Type: Grant
    Filed: July 1, 1985
    Date of Patent: January 7, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Linda A. Clark, Luis Soto
  • Alignment of ferroelectric LCDs
    Patent number: 4561726
    Abstract: The alignment of liquid crystal materials in cells utilized for devices is significantly enhanced through the use of materials such as polyamides, polyimides, nylons, and polyesters. This expedient for alignment of liquid crystal materials is useful for nematic and cholesteric liquid crystals, but finds particularly advantageous use for aligning smectic liquid crystals.
    Type: Grant
    Filed: July 29, 1983
    Date of Patent: December 31, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: John W. Goodby, Thomas M. Leslie, Jayantilal S. Patel
  • Downstream apparatus and technique
    Patent number: 4554047
    Abstract: The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effects are avoided. The downstream apparatus utilizes a discharge region that is relatively large compared to the volume occupied by the substrates. Additionally, the concentration of the etchant species in the effluent is maintained at a level that is of the same order as that produced in the discharge region.
    Type: Grant
    Filed: October 12, 1984
    Date of Patent: November 19, 1985
    Assignees: AT&T Bell Laboratories, AT&T Technologies
    Inventors: Joel M. Cook, Daniel L. Flamm, Edward H. Mayer, Bernard C. Seiler
  • Process for measuring fluorescence
    Patent number: 4549807
    Abstract: Fluorescent measurements are taken utilizing a Raman enhancing surface by a method which allows reduction or essentially complete elimination of interference by fluorescence quenchers. In particular, the fluorescent medium to be measured is interacted with a Raman enhancing surface. Through this interaction between the Raman enhancing surface and the fluorescing species, fluorescence quenching is eliminated. The quenching is particularly significant in analytical procedures such as those involved in chromatography and medical testing.
    Type: Grant
    Filed: October 7, 1983
    Date of Patent: October 29, 1985
    Assignee: AT&T Bell Laboratories
    Inventor: Timothy D. Hoffmaster
  • Catalytic process for the production of urea and ammonium cyanate
    Patent number: 4542006
    Abstract: A catalytic process has been found to produce urea or its equivalent, NH.sub.4 NCO, under relatively mild pressure and temperature conditions. This process entails flowing a gas mixture containing NO.sub.x, CO, and a source of hydrogen such as H.sub.2 or H.sub.2 C over a hydrogenation catalyst such as platinum. Yields of urea above 90 percent based on NO.sub.x conversion are obtainable.
    Type: Grant
    Filed: October 30, 1981
    Date of Patent: September 17, 1985
    Assignee: AT&T Bell Laboratories
    Inventor: Rudolf J. H. Voorhoeve
  • Matrix addressed bistable liquid crystal display
    Patent number: 4529271
    Abstract: A matrix addressed, bistable liquid crystal optical display is disclosed. The display includes a liquid crystal twist cell which has at least two states which are stable in the presence of a single given holding voltage. A form of 3:1 matrix addressing is used in the display which enhances operational characteristics.
    Type: Grant
    Filed: March 12, 1982
    Date of Patent: July 16, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Dwight W. Berreman, William R. Heffner, Allan R. Kmetz
  • Polymerizing monomer in presence of polymer containing electrophilic moiety using Ziegler-Natta catalyst
    Patent number: 4525538
    Abstract: Graft polymers such as grafted polyacetylene and devices based on derivatives of these polymers are produced utilizing a specific process. The process includes the steps of polymerizing a monomer such as acetylene in the presence of a host polymer such as polyisoprene to produce a graft polymer. The use of a host polymer yields several desirable results. For example, when the graft polymerization is performed in the presence of a solvent for an appropriate host polymer, the entire graft polymer is solvated. The solvated graft polymer is then employable to produce films of polymers on a substrate which are in turn useful in structures such as devices.
    Type: Grant
    Filed: April 18, 1983
    Date of Patent: June 25, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Gregory L. Baker, Frank S. Bates
  • Bilevel resist
    Patent number: 4521274
    Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resist baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as that formed by the condensation of formaldehyde with a silicon-substituted phenol. This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.
    Type: Grant
    Filed: May 24, 1984
    Date of Patent: June 4, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Elsa Reichmanis, Cletus W. Wilkins, Jr.
  • Method of substrate heating for deposition processes
    Patent number: 4514250
    Abstract: Strain-free mounting and uniform heating of deposition substrates are achieved by coating the backside of the substrate such as a GaAs substrate with a reflective layer. A reflective environment formed, for example, by tantalum foils allows reflections between the reflective surface of the substrate and the reflective surface of the environment. These multiple reflections, in turn, produce uniform heating of the substrate.
    Type: Grant
    Filed: October 18, 1982
    Date of Patent: April 30, 1985
    Assignee: AT&T Bell Laboratories
    Inventor: James C. Hwang
  • Germanium p-i-n photodetector on silicon substrate
    Patent number: 4514748
    Abstract: Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.
    Type: Grant
    Filed: November 21, 1983
    Date of Patent: April 30, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: John C. Bean, Alexander Kastalsky, Sergey Luryi