Abstract: A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip (130) is provided with additional interconnect wiring to a substrate (500), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.

Abstract: An integrated circuit semiconductor memory device having the BOX layer removed from under the gate of a storage transistor to increase the gate-to-substrate capacitance and reduce the soft error rate. The increased node capacitance thus obtained is achieved without requiring a corresponding increase in area.

Abstract: A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines.

Abstract: A system and method for estimating propagation noise that is induced by a non-zero noise glitch at the input of the driver circuit. Such propagation noise is a function of both the input noise glitch and the driver output effective capacitive load, which is typically part of the total wiring capacitance due to resistive shielding in deep sub-micron interconnects. The noise-driven effective capacitance solution provided herein also estimates the propagation noise induced by a non-zero noise glitch at the input of the driving gate. Gate propagation noise rules describing a relationship between the output noise properties and the input noise properties and the output loading capacitance are used within the noise-driven effective capacitance process to determine the linear Thevenin model of the driving gate. The linearized Thevenin driver model is then employed to analyze both the propagation noise and the combined coupling and propagation noise typically seen in global signal nets.

Abstract: A hybrid linear wire model for tuning the transistor widths of circuits linked by RC interconnects is described. The method uses two embedded simulators during the tuning process on netlists that contain resistors (Rs). A Timing oriented simulator is used only for timing purposes on the original netlist that includes all the Rs. A Gradient oriented simulator is then run only on the modified netlist with all Rs shorted and within the iterative loop of the tuner to compute gradients. The present hybrid method achieves a significant improvement in computational speed. The Timing oriented simulator is fast and accurate for only timing netlists with Rs, but cannot compute gradients efficiently. The Gradient oriented simulator computes gradients efficiently but cannot do so in the presence of Rs.

Abstract: A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The transistor gate is engineered in lieu of the channel. The vertical pass transistor for the DRAM cell incorporates two gate materials having different work functions. The gate material near the storage node is n-type doped polysilicon. The gate material near the bit line diffusion is made of silicide or metal having a higher work function than the n-polysilicon. The novel device structure shows several advantages: the channel doping is reduced while maintaining a high Vt and a low sub-threshold leakage current; the carrier mobility improves with the reduced channel doping; the body effect of the device is reduced which improves the write back current; and the sub-threshold swing is reduced because of the low channel doping.

Abstract: To test electrical characteristics of a Thin Film Transistor (TFT) with a source or drain terminal left open and exposed, using a non-contact current source and protecting the TFTs from adverse effects, such as contamination, destruction, and the like. A tester 100 is provided to test a TFT array substrate 14, the tester including ion flow supply devices 16 and 18 for supplying an ion flow onto the surface of a substrate 14. Thereon, an array 12 of TFTs is formed, each TFT being connected to an electrode having a source or a drain left open and exposed; a control circuit 24 for supplying an operating voltage to a gate electrode of the TFT to be tested in the array; and a measurement circuit 24 for measuring an operating current via the testing TFT source or drain that remain in a non open state.

Abstract: An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results.

Abstract: A system and a method for measuring and quantitatively analyzing the jitter in repetitive electrical signals in a chip using a tester are described. The tester sorts chips based on the jitter measurements, thereby eliminating the need for external instrumentation. The waveform is sampled by the tester at various points of a period over a large number of periods and results are collected. The data is analyzed to determine the total range where the waveform is found to undergo a transition. The transition area is further analyzed to pinpoint the precise location of the transition for each period of the repetitive waveform. The data is used to quantify the jitter by means of statistical analyses, the results of which are used by the tester to sort the chips by comparing the calculated jitter characteristics to predetermined criteria.

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane (60) activates a switch contact or plunger (40). The membrane incorporates interdigitated metal electrodes (70) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane (60), and is used to mechanically displace the switch contact (30). An RF gap area (25) located within the cavity (250) is totally segregated from the gaps (71) between the interdigitated metal electrodes (70). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch.

Abstract: A method, system and program product are described for generating a clock distribution network on an integrated circuit by determining an allowable placement region for each of a set of clock tree leaf elements in the integrated circuit. This allowable placement region is generated by determining and intersecting a set of sub-regions under different constraints, each of which identifies an area in which the clock tree leaf element is placed to satisfy the respective constraint. Constraints for which sub-regions are determined include timing constraints in the form of slacks and congestion constraints. After allowable placement regions have been determined, the clock tree leaf elements are clustered, and each clock tree leaf element is placed at a location within its allowable placement region which minimizes some cost function for that clustering.

Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

Abstract: This invention describes a method of synchronizing test clocks in an LSSD system to achieve near simultaneous arrival of the clock signals at the inputs of all LSSD registers. The method relies on pipelining the latches to distribute the test clocks, where all pipeline latches are synchronized by the system clock. This enhancement improves the frequency at which the test clocks switch and improve the testing throughput by reducing testing time, resulting in significant reductions in testing hardware and overall time required for system test, without compromising any of the benefits associated with conventional LSSD techniques. The method further enhances the distribution of the test clock signals to points throughout the entire chip, with a distribution network that is tailored according to a desired LBIST speed.

Abstract: A method for performing timing closure on VLSI chips in a distributed environment is described. Abstracting the physical and timing resources of a chip and providing an asynchronous method of updating that abstraction allows multiple partitions of a chip to be optimized concurrently. A global view of physical and timing resources is supplied to local optimizations which are applied concurrently to achieve timing closure. Portions of the hierarchy are optimized in separate processes. Partitioning of the chip is performed along hierarchical lines, with each process owning a single partition in the hierarchy. The processes may be executed by a single computer, or spread across multiple computers in a local network. While optimizations performed by a single process are only applied to its given portion of the hierarchy, decisions are made in the context of the entire hierarchy. These optimizations include placement, synthesis, and routing.

Abstract: A sub-circuit based extraction method which extracts a multi-finger MOS transistor directly as a sub-circuit is described. By adding three marking layers, the method provides the layout extracted netlist with a complete list of device geometric parameters corresponding to the device properties as presented in the sub-circuit model based schematic netlist. By performing a layout-versus-schematic comparison based on all geometric parameters extracted, the layout checking is performed in a complete and accurate way where each device parameter is checked against the corresponding design schematic. This complete and accurate geometric parameter comparison enhances the confidence level of the layout physical verification.

Abstract: A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical proximity correction is performed by computing the image intensity on selected evaluation points on the mask layout. The image intensity to be computed includes optical flare and stray light effects due to the interactions between the shapes on the mask layout. The computation of the image intensity involves sub-dividing the mask layout into a plurality of regions, each region at an increasing distance from the evaluation point. The contributions of the optical flare and stray light effects due to mask shapes in each of the regions are then determined. Finally, all the contributions thus obtained are combined to obtain the final computation of the image intensity at the selected point.

Abstract: A method of removing pessimism in static timing analysis is described. Delays are expressed as a function of discrete parameter settings allowing for both local and global variation to be taken in to account. Based on a specified target slack, each failing timing test is examined to determine a consistent set of parameter settings which produces the worst possible slack. The analysis is performed on a path basis. By considering only parameters which are in common to a particular data/clock path-pair, the number of process combinations that need to be explored is reduced when compared to analyzing all combinations of the global parameter settings. Further, if parameters are separable and linear, worst-case variable assignments for a particular clock/data path pair can be computed in linear time by independently assigning each parameter value.

Abstract: A process for forming a metal suicide gate in an FET device, where the suicide is self-forming (that is, formed without the need for a separate metal/silicon reaction step), and no CMP or etchback of the silicon material is required. A first layer of silicon material (polysilicon or amorphous silicon) is formed overlying the gate dielectric; a layer of metal is then formed on the first layer, and a second layer of silicon on the metal layer. A high-temperature (>700° C.) processing step, such as source/drain activation anneal, is subsequently performed; this step is effective to form a silicide layer above the gate dielectric by reaction of the metal with silicon in the first layer. A second high-temperature processing step (such as source/drain silicidation) may be performed which is effective to form a second silicide layer from silicon in the second layer.

Abstract: A circuit and method of controlling integrated circuit power consumption using phase change switches where the phase change switches switchably couple and decouple power sources to logic blocks in response to a programming voltage.

Abstract: A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise. A region of semiconducting material (11) is provided overlying an insulator (3) disposed on a substrate (10); an etching process exposes a plurality of corners (111–114) in the semiconducting material. The exposed corners are oxidized to form elongated tips (111t–114t) at the corners; the oxide (31) overlying the tips is removed. An oxide layer (51), such as a gate oxide, is then formed on the semiconducting material and overlying the corners; this layer has a reduced thickness at the corners. A layer of conducting material (60) is formed in contact with the oxide layer (51) at the corners, thereby forming a plurality of possible breakdown paths between the semiconducting material and the layer of conducting material through the oxide layer.