Abstract: In a wafer lapping method including a first step of lapping irregularities of a surface of a wafer to flatten the surface of the wafer by pressing the surface of the wafer against an abrasion pad (2) with an abrasive agent containing abrasive particles fed onto the abrasion pad, the method further includes a second step of feeding, instead of the abrasive agent upon completion of the lapping step, onto the abrasion pad a chemical solution (6) for use in preventing agglomeration of the abrasive particles contained in the abrasive agent which remains on the abrasion pad. This results in preventing the abrasion pad from drying. Following the second step, a third step is carried out for lapping irregularities of a surface of a different wafer to flatten the surface of the different wafer by pressing the surface of the different wafer against the abrasion pad with the abrasive agent fed onto the abrasion pad instead of the chemical solution.

Abstract: An electron beam direct drawing method has the steps of: converting drawing data for the electron beam direct drawing of a semiconductor device pattern on a chip into a predetermined size and shape; dividing the converted drawing data into multiple fields which are electron beam deflection regions; drawing the drawing data corresponding to each of the divided multiple fields on the chip by step and repeat method; wherein the converted drawing data dividing step is conducted such that the drawing data is divided into the multiple fields on the basis of the chip.

Abstract: A stage is provided with pressing holes arranged circumferentially and suctioning holes arranged circumferentially to be close to the outer peripheral edge side compared to the pressing holes. A cavity connected to these pressing holes and suctioning holes is provided within a wafer holder. In addition, first filters, which allow a gas to flow from the cavity side to the wafer holding surface side, are arranged between the pressing holes and the cavity. Second filters, which allow a gas to flow only from the wafer holding surface side to the cavity side, are arranged between the suctioning holes and the cavity.

Abstract: There is provided a semiconductor device including a substrate, a first insulating film formed on the substrate, a first electrically conductive layer formed on the first insulating film, a dielectric layer formed on the first electrically conductive layer, the dielectric layer being formed with a first through-hole, a second electrically conductive layer formed on the dielectric layer, the second electrically conductive layer being formed with a second through-hole in alignment with the first through-hole, a second insulating film covering the first and second electrically conductive layers therewith, and a first wiring layer formed on the second insulating film, a first contact hole being formed through the second insulating film, and the dielectric layer and the second electrically conductive layer both in the first and second through-holes, the first wiring layer making electrical contact with the first electrically conductive layer through the first contact hole.

Abstract: A soft magnetic layer is employed in place of the nonmagnetic insulating layer in a yoke type or flux guide type magnetoresistive head in which the magnetoresistive element is provided with a yoke or flux guide via a non-magnetic insulating layer which overlaps the magnetoresistive element, in part. Thus, leakage magnetic field can be guided effectively and playback output can be improved.

Abstract: A pet toy amusement device which self-regulates the delivery of a pet treat of a selected size and shape, comprising an inner housing for containing the pet treat of a selected size and shape, the housing including one or a plurality of openings for dispensing such treat. The device also incorporates an outer housing to contain the inner housing, wherein the inner housing is movable within the outer housing, the outer housing also containing one or a plurality of openings for teat dispensing. The number, size and/or shape of one or plurality of openings on the inner and outer housing can be conveniently varied with respect to the number, size and/or shape of the treats such that when the device is motioned by a pet, the device self-regulates pet treat delivery.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: A chew toy having a substantial component of vegetable matter wherein such vegetable matter, in dried and powdered or granulation form, is melted as it is injection molded. The process provides a chew toy with a consistency and chewability preferred by most dogs that is not attainable by known prior art baking or compression molding techniques.

Abstract: A footwear structure including an outsole and a separate midsole having interlocking shank portions. The outsole has an upward extending arc in the shank area which defines a shank interlock portion on the top surface of the outsole. The midsole has a corresponding arc which defines a shank interlock portion on a bottom surface thereof which mates with the arc in the outsole for resisting motion of the midsole relative to the outsole in the case where the midsole is unsecured within the structure to allow for removal of the midsole. A rigid shank insert may be provided between the midsole and outsole. The midsole further includes a plurality of cushioning pads on a bottom surface of the midsole which are separated by air channels. The air channels extend along the length of the midsole and intersect with a heel cavity. A plurality of thru holes are formed in the midsole to extend from the top surface thereof to the air channels in the bottom surface.

Abstract: A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.

Abstract: In a semiconductor device having a lead-on-chip structure, a thin plate is arranged in an outer peripheral area of a semiconductor element and has a thickness substantially the same as that of the semiconductor element.

Abstract: A completely digestible highly nutritious dog chew formulated primarily of peanut flour, casein and a vegetable starch carbohydrate, the texture of hardness of which is easily modified to suit a particular dog by the dog owner. By irradiating the chew in a microwave oven, the chew is caused to expand and is thereby rendered more easily chewable.

Abstract: A microphone housing system is disclosed having a tapered structure enclosed within the housing structure coupled to a rear portion of a microphone element. In the preferred embodiment, the tapered portion has a generally conic shape expanding away from the rear portion of the microphone element. The housing structure surrounding the tapered structure has a plurality of radially disposed opening or slots and fully or partially covered with a sound-resistive material. The housing system provides increased front-to-back signal ratio and increased overall gain and frequency response due to superior rear signal cancellation.

Abstract: There is provided a field emission cold cathode including a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an electrically conductive gate electrode layer formed on the insulating layer, a plurality of cavities being formed throughout both the insulating layer and the gate electrode layer, a conical emitter formed on the semiconductor substrate in each one of the cavities, and an insulating wall formed at least in the semiconductor substrate so that the insulating wall surrounds each one of the cavities. The insulating wall partitions the semiconductor substrate into a first group of blocks located at a marginal end of the semiconductor substrate and a second group of blocks located within the first group of blocks. Each one of the first group of blocks is designed to have a greater area than an area of each one of the second group of blocks.

Abstract: A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of the first transfer electrode isothermally oxidized to form a second silicon oxide film. Thereafter, a polycrystalline silicon film and a third silicon oxide film are formed on the entire surface and patterned to form a second transfer electrode. A fourth silicon oxide film is formed on the entire surface, and is etched back. Thereafter, the side wall surfaces of the third silicon oxide film and the second transfer electrode are covered with a fourth silicon oxide film. Thereafter, a light shielding film is selectively formed on them.

Abstract: The invention provides a solid state imaging device having horizontal charge transfer elements at the opposite ends of vertical charge transfer elements by which the potential of a first element separation region is stabilized to suppress reduction of the maximum handling charge amount of the vertical charge transfer elements and deterioration of the transfer efficiency of charge caused by an influence of a pulse signal applied to the vertical charge transfer elements.

Abstract: In a method for manufacturing a semiconductor device, an insulating layer is formed on a semiconductor substrate, and a refractory metal is formed layer on the insulating layer. Then, a first opening is perforated in the refractory metal layer, and a part of the insulating layer is etched by using the refractory metal as a mask. Then, a second opening is perforated in the refractory metal layer. The second opening is superposed onto the first opening and is larger than the first opening. Then, the insulating layer is again etched by using the refractory metal layer as a mask, so that a T-shaped opening is perforated in the insulating layer. Finally, a modified T-shaped gate metal electrode is formed on the insulating layer having the T-shaped opening.

Abstract: A hardness modifiable edible dog chew produced by extruding a vegetable starch mixture into beads and then injection molding the beads into the shape of the dog chew. The mixture includes lecithin, calcium carbonate and optionally a dog attractant.

Abstract: In a method of manufacturing semiconductor device, an aluminum film and a barrier metal film are formed on a semiconductor substrate and then an interlayer insulation film 15 is formed over the aluminum film and the barrier metal film. Then a PVD-Al film is formed over the entire upper surface of the interlayer insulation film by PVD, whereupon the PVD-Al film the interlayer insulation film are etched to open via holes, exposing part of the upper surface of the barrier metal film. Subsequently, via plugs are formed by filling metal, which includes aluminum, in the via holes by selective CVD with masking by a native oxide film formed on the upper surface of the PVD-Al film whereupon the native oxide film is removed by etching. Then a CVD-Al is formed over the entire upper surface of the PVD-Al film and the via plugs by CVD.

Abstract: A semiconductor laser device comprises a mesa structure selectively grown on a InP substrate, the mesa structure having a laser active layer and an optical guide layer, current blocking layer disposed on both sides of the mesa structure and an embedding layer formed on the optical guide layer. Each of the current blocking layer and embedding layer has a refractive index lower than the refractive index of the optical guide layer. The selective growth of the mesa structure changes the thickness and width of the optical guide layer in the opposite directions to cancel the change in the lasing wavelength caused by fabrication errors.