Abstract: The configuration of an optical head is such that it enables movement of and setting of the position of a laser light source along an optical axis to either a first position which corresponds to the position for which an objective lens is designed to accommodate an optical disc having a first substrate thickness, and a third position which is between the first position and a second position at which the aberration with respect to an optical disc having a second substrate thickness, which is different than that of the first optical disc, is minimum. By establishing this third position as a position at which not only is there a reduction in aberration with respect to the second optical disc, but also at which there is no significant reduction in the allowable amount of lateral skew of the laser light source from the optical axis, it is possible to prevent a significant worsening of aberration characteristics, even if the laser light source is skewed from the optical axis.

Abstract: A backspin retarder for a shaft comprises a brake mechanism including a stationary brake member and opposed brake members rotatable with the shaft and movable between braking position in which the movable brake members engage the stationary brake member and a non-braking position in which the movable brake members are removed from the stationary brake member and a brake control mechanism responsive to the direction of rotation of the shaft for disabling the brake mechanism when the shaft rotates in a forward direction and for enabling the brake mechanism when the shaft rotates in a reverse direction.

Abstract: In a process for forming a plasma CVD fluorine-doped SiO.sub.2 dielectric film, a feed gas to be supplied to a plasma CVD apparatus is composed to include not only SiH.sub.4 gas, O.sub.2 gas, CF.sub.4 gas and Ar gas but also CO.sub.2 gas, and the amount of carbon and the amount of fluorine included in the feed gas are controlled independently of each other, to form a plasma CVD silicon-based SiO.sub.2 dielectric film doped with fluorine in the concentration range of 4.0.times.10.sup.21 atoms/cc to 1.0.times.10.sup.22 atoms/cc, and carbon in the concentration range of 3.0.times.10.sup.19 atoms/cc to 1.0.times.10.sup.21 atoms/cc. Thus, a plasma CVD silicon-based SiO.sub.2 dielectric film having a low dielectric constant and a sufficient "resistance to moisture" is obtained.

Abstract: An integrally formed three-dimensional truss structure, including molds and methods for production of same, containing outer top and bottom plane surfaces thereof comprising interconnected rod segments integrally formed at their points of intersection on the outer top and bottom surfaces, the top and bottom surfaces also integrally joined together through additional interconnected rod segments passing through an integrally formed intersection, wherein the additional interconnected rod segments passing through the integrally formed intersection form a three-dimensional continuous array of triangles.

Abstract: A method for manufacturing a semiconductor device having a high durability against a hot carrier problem and reliable transistor characteristics comprises the steps of forming a first silicon oxide film by atmospheric pressure CVD, forming a silicon nitride film by low pressure CVD to a thickness of 30 to 200 angstroms, and forming a silicon oxide film by biased electron cyclotron resonance CVD (ECR-CVD) using a silane gas as a source material while applying a radio frequency electric field to the substrate. The ECR-CVD silicon oxide film provides a sufficient amount of active hydrogen ions, and silicon nitride film allows movement of an adequate amount of the active hydrogen ions to thereby eliminate the hot carrier problem and recovery of transistor characteristics from the plasma damage.

Abstract: A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.

Abstract: An improved animal chew comprising a low voltage battery and various conductors such that when an animal chews on the present invention an electrical circuit is formed and a micro-current flows. This micro-current has therapeutic effects on the animal's teeth and gums, and optionally, low concentrations of certain trace metals are released which similarly have beneficial results regarding the animal's oral hygiene. In addition, upon chewing, calcium ions and/or fluoride ions can be discharged. Finally, in optional embodiment, ultrasonic sound waves can be generated when an animal chews on the present invention which further assists in removal of plaque from the animal's teeth and gums.

Abstract: The present invention relates to a high pressure, rapid cutting tip nozzle which provides a cutting oxygen jet hole 2b in the front end surface, and provides concentrically from the inside, with this cutting oxygen jet hole 2b as the center, a first oxygen jet hole group 7a, a first fuel gas jet hole group 8c, a second fuel gas jet hole group 8a, and an oxygen jet opening 9a, and wherein steel is cut by the high pressure gas flow jetting from the cutting oxygen jet hole 2b, and in particular is characterized in the front end of flow paths 9b and 9c, which branch from the flow path 9 leading to the oxygen jet opening 9a, opening on the side surface of flow paths 8 and 8b, which lead to the first and second fuel gas jet hole group 8c and 8a, at a point within 10 mm from said front end surface. According to the present invention, gas cutting of steel can be carried out with high efficiency and safely.

Abstract: A crash energy absorption system for a motor vehicle, formed of an assembly of panels of lightweight core material sandwiched within and bonded to reinforcing or stiffener skins. Preferably, the reinforcing or stiffener skins comprise fiberglass, graphite, Kevlar or Spectra reinforced polymers with any combination of fibers and/or fiber orientations, or metal sheets, or ceramic sheets, while the lightweight core material comprises a low-density, dimensionally stable material such as balsa wood, synthetic foam material such as polyurethane foam. The crash energy absorption system may take the form of removable parts that are replaceable after an accident, or may be formed as integral parts of a monocoque body, or as a part of a composite body load-bearing frame.

Abstract: An n-type GaAs layer as a buffer layer, an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, an active layer, a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, a thin layer of Al.sub.x Ga.sub.1-x As layer (x.gtoreq.0.9), an A1.sub.0.7 Ga.sub.0.3 As layer as a current spreading layer and a high doped p-type GaAs cap layer are sequentially grown on an n-type GaAs layer of a substrate. As the active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 P based bulk or multi-quantum well is employed. As the current spreading layer, an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.7) is employed. The current spreading layer is a p-type III-IV compound semiconductor having wider band gap than a band gap of a material used for forming the active layer, and being established a lattice matching with the lower p-type cladding layer. After mesa etching up to the cladding layer, growth of selective oxide is performed at a part of the AlGaAs layer. BY this, a block layer (selective oxide of AlGaAs) is formed.

Abstract: A method for measuring total antioxidant activity of antioxidants utilizes BODIPY dyes which fluoresce in the visible region of the electromagnetic spectrum as a fluorescent reporter.

Abstract: A field emission device is provided, which is able to prevent the inclination of emission direction of electrons. An insulating layer is formed on a first main surface of a substrate. A conductive layer with a gate electrode part and an interconnection part is selectively formed on the insulating layer. A second conductive layer is formed on the second main surface of the substrate. The first part has a window to expose the insulating layer. The insulating layer has a hole to expose the first main surface of the substrate. The hole is located just below the window of the conductive layer. A conical cathode is formed on the exposed first main surface of the substrate in the bole. The central axis of the cathode, which penetrates the tip of the cathode, is tilted with respect to a normal of the second conductive layer toward an opposite side to the interconnection part of the conductive layer. The direction of the emitted electrons is approximately parallel to the normal of the second conductive layer.

Abstract: A temporary identifier which is assigned to a mobile station is changed in response to one of a location registration request, a call request, and an incoming call response which are transmitted from the mobile station to a network where the mobile station is located. Using such a frequently changed temporary identifier, the mobile station is identified by a home memory station.

Abstract: In a process for manufacturing a semiconductor device, an N-well, a field oxide film, a gate oxide film and a polysilicon gate electrode are formed on a P-type silicon substrate. Arsenic is ion-implanted into the substrate using the polysilicon gate electrode as a mask, to form N-type diffused source/drain regions. Boron fluoride is ion-implanted into the N-well using the polysilicon gate electrode as a mask, to form P-type diffused source/drain regions. A titanium film is deposited on the whole surface, and a first heat treatment is carried out at a first temperature to form titanium silicide. Metal titanium remaining on the titanium silicide is removed so as to selectively form titanium silicide on the polysilicon gate electrode, the N-type diffused source/drain regions and the P-type diffused source/drain regions. A second heat treatment is carried out on the refractory metal silicide at a second temperature higher than the first temperature.

Abstract: A completely digestible highly nutritious dog chew formulated primarily of turkey meal, rice meal, casein and starch carbohydrate, the texture of hardness of which is easily modified to suit a particular do g by the dog owner. By irradiating the chew in a microwave oven, the chew is caused to expand and is thereby rendered more easily chewable.

Abstract: An interconnection system in a semiconductor device comprises a Ti.sub.2 N film having a lower resistivity and a higher thermal stability at a higher temperature compared to a TiN film. The Ti.sub.2 N film is formed by rapid thermal annealing of a TiN film and a Ti film consecutively formed on an insulator film. The rapid thermal treating is effected in a nitrogen ambient at a substrate temperature of 700 to 900.degree. C. for 30 to 120 seconds.

Abstract: Disclosed is a method for forming a protruding electrode which has the steps of: forming a first film of an organic or polymeric material on the top portion of a protruding electrode formed on a protruding-electrode-forming plane; then forming a second film of a polymeric material on the protruding-electrode-forming plane to bury the base portion of the protruding electrode; and removing the first film after the second film is cured; wherein the first film is of the organic or polymeric material which has no affinity with the polymeric material of the second film.

Abstract: A plastic-encapsulated semiconductor device is provided, which makes it possible to reinforce the power/ground line by a bus-bar without using the over-lead bonding technique.

Abstract: A magnetoresistive effect composite head includes a read magnetoresistive effect (MR) head and a recording inductive (ID) head. The MR head has first and second magnetic shield films and an MR element. The first and second magnetic shield films are formed on a slider main body in a stacked manner through a predetermined gap therebetween. Each of the first and second magnetic shield films has an end face flush with a slider floating surface. The MR element is formed between the first and second magnetic shield films through magnetic isolation layers each made of an insulator. The ID head has a first magnetic pole film, a coil, and a second magnetic pole film. The first magnetic pole film serves also as the second magnetic shield film. The coil and the second magnetic pole film are formed through an insulator on the first magnetic pole film on a surface opposite to the MR element through a predetermined magnetic gap. The second magnetic pole film has a projecting portion that defines a track width.

Abstract: The invention provides, in a first form, an expandable plug for regulating pressure or flow within a tube. The plug has an inflatable bladder (12) for diametral expansion by internal fluid pressure introduced by inlet (14). The plug is reinforced by an envelope (26) of cords (28) which spread laterally upon inflation of the bladder to provide diametral support to the bladder. In a second form of the invention, an inflatable plug positioned in a tube of internal diameter d is controlled according to the equation P.sub.p =.DELTA.P+P.sub.d wherein P.sub.d is the internal pressure in the plug, .DELTA.P is the differential pressure across the plug and P.sub.d is the plug free expansion pressure for diameter d.