Abstract: A low power semiconductor memory device can reduce power consumption of the whole chip by activating a bit line sense amplifier and a sub word line driver for driving a selected memory cell array block. The low power semiconductor memory device comprises a plurality of memory cell array blocks, a plurality of sense amplifier arrays, a sub word line driver array and a block selecting activation control unit. The block selecting activation control unit selectively activates the sub word line driver and the sense amplifier for driving the memory cell array block corresponding to a block selecting address.

Abstract: An apparatus is provided for testing fluid samples includes a sensor, which can be light source, directed to a flow cell and a photo sensor for detecting a light beam reflected from the flow cell. The photo sensor monitors the fluid in the flow cell by sensing the reflected light beam from the flow cell, thereby monitoring the test process. The apparatus may have additional light source so that the photo sensor may monitor the test process by detecting the absorption light beam or fluorescent light beam from the flow cell at different phases of the test process.

Abstract: IGFBP-3 fusion proteins are provided that are useful, for example, in cell-based assays, as IGF antagonists, and in mapping IGF-I and IGF-II binding sites on other molecules such as wild-type IGFBP-3 and IGF agonist peptides identified by phage display. Methods for making such fusion proteins are also provided.

Abstract: The present invention is directed to novel polypeptides and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.

Abstract: A method for fabricating a semiconductor device is disclosed. The method provides etching a predetermined region of a semiconductor substrate prior to formation of a device isolation film defining an active region and forming a gate having a stepped gate channel.

Abstract: Disclosed herein is a method for fabricating a memory device. According to the present invention, a device isolation film is etched using a mask partially exposing a channel region and the device isolation film adjacent thereto during the etching process of the recess gate region, and a semiconductor substrate in the recess gate region is etched. Accordingly, a silicon horn in the recess gate region is prevented from being formed, thereby increasing a margin of the etching process.

Abstract: A test mode control device using a nonvolatile ferroelectric memory enables a precise test of characteristics of a memory cell array by changing a reference voltage and timing regulated for a memory cell test in a software system without extra processes. In an embodiment, test modes and arrangement of data pins are programmed using a nonvolatile ferroelectric memory, and addresses, control signals and arrangement of data pins are regulated in a software system depending on a programmed code. As a result, characteristics of a cell array can be precisely tested without extra processes.

Abstract: The invention concerns the identification of proteomes of biological fluids and their use in determining the state of maternal/fetal conditions, including maternal conditions of fetal origin, chromosomal aneuploidies, and fetal diseases associated with fetal growth and maturation. In particular, the invention concerns the identification of the proteome of amniotic fluid (multiple proteins representing the composition of amniotic fluid) and the correlation of characteristic changes in the normal proteome with various pathologic maternal/fetal conditions, such as intra-amniotic infection, or chromosomal defects.

Abstract: An apparatus is provided for testing fluid samples includes a sensor, which can be light source, directed to a flow cell and a photo sensor for detecting a light beam reflected from the flow cell. The photo sensor monitors the fluid in the flow cell by sensing the reflected light beam from the flow cell, thereby monitoring the test.

Abstract: A composition is disclosed that comprises a mixture of polypeptides of opposite charge and an excipient selected from the group consisting of arginine, lysine, glutamic acid, sodium dodecyl sulfate, beta-hydroxy cyclodextrin, and beta-cyclodextrin sulfobutyl ether.

Abstract: A method for forming device isolation film of semiconductor device is provided, the method including forming a pad oxide film, a pad nitride film, and an oxide film for device isolation on a semiconductor substrate, etching a predetermined region of the oxide film for device isolation, the pad nitride film, the pad oxide film, and the semiconductor substrate to form a trench, forming a SEG silicon layer in the trench to form an active region, and forming a gap-fill insulating film on the resulting structure having a gap between sidewalls of the trench and the SEG silicon layer.

Abstract: A parallel compression test circuit of a memory device disperses peak current and reduce noise by operating input/output amplifiers at different timings in a parallel compression test mode. The parallel compression test circuit comprises an input/output amplification control unit for activating a plurality of input/output amplifiers connected to a selected bank in a normal mode, and activating the plurality of input/output amplifiers in each bank at different timings in a test mode.

Abstract: A page access circuit of a semiconductor memory device is normally operated even when a page address toggles at any timing in a page mode. The page access circuit comprises an address buffer, a column control unit, a page control unit, a pre-active unit and a precharge unit. The column control unit is controlled by the page address control signal. The page control unit controlled by a sense detecting signal is adapted and configured to generate the page address control signal. The pre-active unit controlled by the page address control signal is adapted and configured to generate a mode identification signal in response to the page address transition detecting signal. The precharge unit is adapted and configured to perform a selective precharge operation in response to the mode identification signal.

Abstract: The invention relates to the use of hyperforin for treating cancer diseases and/or precancerous stages. In addition, the invention relates to a hyperforin-containing ointment or cream and to its production and use. The hyperforin-containing ointment or cream is also suitable for treating inflammatory skin diseases, geriatric skin and bacterial skin diseases and also skin diseases in the sphere of veterinary medicine.

Abstract: A substance-atomizing apparatus (30) has a pump member (9) and a generator member (12). The pump member (9) has a piston (13) that is reciprocally moved in a cylinder (17) by drive device (1) and pressurizes a raw material fluid. The generator member (12) makes the raw material fluid pressurized in the pump member (9) pass through a hole portion (26) provided inside the generator member, and atomizes a substance included in the raw material fluid in accordance with nozzle characteristics of the hole portion (26). A pressure chamber (14) is formed between the piston (13) and a closed end of the cylinder (17). An intake (15) is formed on a cylinder (17) side surface of the pressure chamber (14). An outlet (16) is formed on the closed end (18) of the cylinder (17). In the first half of a discharge stroke, the raw material fluid is sent from the pressure chamber (14) into a charge vessel (10) through the intake (15).

Abstract: The present invention discloses methods for manufacturing a metal line of a semiconductor device that can prevent undesirable etching of an edge of an interlayer insulating film. In accordance with the method, a lower metal line exposed by a via contact hole is covered by a photoresist film pattern which is formed via an exposure and development process using an upper metal line mask. An etching process is performed using the photoresist film pattern as a mask to form the upper metal line region that is then filled to form an upper metal line after removing the photoresist film pattern.

Abstract: A lancet driver is provided wherein the driver exerts a driving force on a lancet during a lancing cycle and is used on a tissue site. The driver comprises of a drive force generator for advancing the lancet along a path into the tissue site, and a sensor configured to detect lancet position along said path during the lancing cycle.

Abstract: A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The ferroelectric capacitor, located where a word line and a bit line are crossed, stores values of logic data. The serial diode switch is connected between the ferroelectric capacitor and the bit line and selectively switched depending on voltages applied to the word line. The nonvolatile memory device using a serial diode cell comprises a plurality of serial diode cell arrays, a plurality of word line driving units and a plurality of sense amplifiers. Each of the plurality of serial diode cell arrays each includes a single serial diode cell where a word line and a bit line are crossed. The plurality of word line driving units selectively drive the word line. The plurality of sense amplifiers sense and amplify data transmitted through the bit line.

Abstract: A SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE features improvement of the amplification degree. The SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE comprises a MBL sensing unit, a voltage dropping unit, a coupling regulation unit, a pull-down regulation unit, a sensing load unit, and an amplification unit. The level of the sensed voltage is double regulated, thereby improving the amplification degree on low voltage sensing data, and a small sensing voltage of a main bit line can be embodied, thereby embodying a lower voltage memory.