Patents Represented by Attorney, Agent or Law Firm Ira David Blecker
  • Patent number: 5168454
    Abstract: An apparatus and method for accurately and rapidly machining a workpiece, particularly for drilling holes smaller than can be formed by other methods, by using a high power pulsed Nd:YAG laser. A low power HeNe laser is joined to the optical path of the high power laser. The colinear beams then scan along one axis of the workpiece. The low power beam is partially split off to a location determining device before final deflection to the workpiece. Deflection in a second axis is achieved by linearly moving the workpiece so that the beam will impinge upon the desired location of the workpiece.
    Type: Grant
    Filed: October 30, 1989
    Date of Patent: December 1, 1992
    Assignee: International Business Machines Corporation
    Inventors: Mark J. LaPlante, Mark G. LaVine, David C. Long, Poyang Lu, John J. Seksinsky, Lawrence D. Thorp, Gerhard Weiss
  • Patent number: 5147741
    Abstract: Phenyl-endcapped depolymerizable polymers are disclosed. The phenyl endcap eliminates the reactive terminal vinyl group resulting in increased depolymerization threshold temperatures and reduced residue after depolymerization. A multilevel metal lift-off process using the phenyl-endcapped polymers is disclosed. Additionally, the polymers are improved ceramic glass binder resins.
    Type: Grant
    Filed: October 23, 1990
    Date of Patent: September 15, 1992
    Assignee: International Business Machines Corporation
    Inventors: Constance J. Araps, Jon A. Casey, Renuka S. Divakaruni, Steven M. Kandetzke, Catherine A. Lotsko
  • Patent number: 5147084
    Abstract: Disclosed is a connector structure on a substrate which includes at least one first solder portion on the surface of the substrate; at least one second solder portion connected to each of the at least one first solder portions; and an epoxy layer disposed about the at least one first and second solder portions in such a manner as to cover the first solder portion and contact, but not cover, the second solder portion. Also disclosed is a connector structure on a substrate which includes at least one first solder portion on the surface of said substrate; at least one second solder ball portion connected to the at least one first solder portions; wherein the melting point of the second solder ball portion is relatively higher than that of the first solder portion. Finally, disclosed is a method of testing the solderability of the above structures.
    Type: Grant
    Filed: August 9, 1991
    Date of Patent: September 15, 1992
    Assignee: International Business Machines Corporation
    Inventors: John R. Behun, Anson J. Call, Francis F. Cappo, Marie S. Cole, Karl G. Hoebener, Bruno T. Klingel, John C. Milliken
  • Patent number: 5139852
    Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
    Type: Grant
    Filed: March 30, 1990
    Date of Patent: August 18, 1992
    Assignee: International Business Machines Corporation
    Inventors: Arnold I. Baise, Ray M. Bryant, Jon A. Casey, Allen J. Dam, Werner E. Dunkel, James N. Humenik, Anthony Mastreani, Robert W. Nufer, Charles H. Perry, Salvatore J. Scilla
  • Patent number: 5139975
    Abstract: There is disclosed a sintering arrangement for enhancing the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.
    Type: Grant
    Filed: September 11, 1991
    Date of Patent: August 18, 1992
    Assignee: International Business Machines Corporation
    Inventors: Lester W. Herron, Sarah H. Knickerbocker, Ananda H. Kumar, Govindarajan Natarajan, Srinivasa S. N. Reddy
  • Patent number: 5139851
    Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
    Type: Grant
    Filed: March 30, 1990
    Date of Patent: August 18, 1992
    Assignee: International Business Machines Corporation
    Inventors: John Acocella, Arnold I. Baise, Richard A. Bates, Jon A. Casey, David R. Clarke, Renuka S. Divakaruni, James N. Humenik, Steven M. Kandetzke, Daniel P. Kirby, John U. Knickerbocker, Sarah H. Knickerbocker, Amy T. Matts, Robert W. Nufer, Srinivasa S. N. Reddy, Mark A. Takacs, Lovell B. Wiggins
  • Patent number: 5135595
    Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
    Type: Grant
    Filed: March 30, 1990
    Date of Patent: August 4, 1992
    Assignee: International Business Machines Corporation
    Inventors: John Acocella, Peter A. Agostino, Arnold I. Baise, Richard A. Bates, Ray M. Bryant, Jon A. Casey, David R. Clarke, George Czornyj, Allen J. Dam, Lawrence D. David, Renuka S. Divakaruni, Werner E. Dunkel, Ajay P. Giri, Liang-Choo Hsia, James N. Humenik, Steven M. Kandetzke, Daniel P. Kirby, John U. Knickerbocker, Sarah H. Knickerbocker, Anthony Mastreani, Amy T. Matts, Robert W. Nufer, Charles H. Perry, Srinivasa S. N. Reddy, Salvatore J. Scilla, Mark A. Takacs, Lovell B. Wiggins
  • Patent number: 5130229
    Abstract: The present invention provides a packaging semiconductor structure and method for obtaining same. The structure is comprised of at least one level of dielectric and metallurgy layers. The at least one level is comprised of a wiring metallurgy plane and a "through-via" plane of interconnecting metallurgy in association with both one and two layers of polymeric dielectric materials. The self-alignment method of fabrication of the level provides a streamlined technique wherein stringent masking and alignment requirements are relaxed, undue processing such as at least one polishing step is eliminated and a structure having adhesive integrity is fabricated.
    Type: Grant
    Filed: April 26, 1990
    Date of Patent: July 14, 1992
    Assignee: International Business Machines Corporation
    Inventors: Kenneth Chang, George Czornyj, Ananda H. Kumar, Heinz O. Steimel
  • Patent number: 5130067
    Abstract: A method for co-sintering ceramic/metal multi-layered ceramic substrates wherein X-Y shrinkage is controlled and X-Y distortion and Z-direction chamber are substantially eliminated. Binder-burnoff is substantially not aggravated during this process as well. The process is accomplished by applying selective forces to the surfaces of the ceramic substrates to control lateral movement while allowing Z direction shrinkage movement. Frictional force means, pneumatic forced means and weights are among the means used to supply forces. Cerium oxide is used in certain embodiments to enhance binder-burnoff.
    Type: Grant
    Filed: May 2, 1986
    Date of Patent: July 14, 1992
    Assignee: International Business Machines Corporation
    Inventors: Philip L. Flaitz, Arlyne M. Flanagan, Joseph M. Harvilchuck, Lester W. Herron, John U. Knickerbocker, Robert W. Nufer, Charles H. Perry, Srinivasa N. Reddy, Steven P. Young
  • Patent number: 5130779
    Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
    Type: Grant
    Filed: June 19, 1990
    Date of Patent: July 14, 1992
    Assignee: International Business Machines Corporation
    Inventors: Birendra N. Agarwala, Aziz M. Ahsan, Arthur Bross, Mark F. Chadurjian, Nicholas G. Koopman, Li-Chung Lee, Karl J. Puttlitz, Sudipta K. Ray, James G. Ryan, Joseph G. Schaefer, Kamalesh K. Srivastava, Paul A. Totta, Erick G. Walton, Adolf E. Wirsing
  • Patent number: 5094769
    Abstract: A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.
    Type: Grant
    Filed: May 13, 1988
    Date of Patent: March 10, 1992
    Assignee: International Business Machines Corporation
    Inventors: Herbert R. Anderson, Jr., Richard B. Booth, Lawrence D. David, Mark O. Neisser, Harbans S. Sachdev, Mark A. Takacs
  • Patent number: 5084071
    Abstract: Disclosed is a method of chem-mech polishing an article, preferably an electronic component substrate. The method includes the following steps;obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles wherein the abrasive particles do not include alumina, a transition metal chelated salt, a solvent for the salt, and a small but effective amount of alumina.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
    Type: Grant
    Filed: February 23, 1990
    Date of Patent: January 28, 1992
    Assignee: International Business Machines Corporation
    Inventors: Anton Nenadic, Robert W. Pasco
  • Patent number: 5073180
    Abstract: A method for forming a co-fired glass ceramic structure including the steps of:forming at least one green sheet of a first crystallizable glass in a thermally decomposable binder;metallizing the green sheet with a pattern of conductive paste including conductive metal, a second crystallizable glass and a thermally decomposable binder, the pattern including at least one via;firing the green sheet according to the following firing cycle steps:a. preheating the green sheet to a first temperature in a furnace with a neutral or reducing ambient so as to effect pyrolysis of the thermally decomposable binders, wherein the first temperature is insufficient to coalesce the first crystallizable glass or the conductive paste;b. introducing a steam ambient into the furnace and then heating the green sheet in the furnace at the first temperature to burn off the pyrolyzed binders;c.
    Type: Grant
    Filed: March 20, 1991
    Date of Patent: December 17, 1991
    Assignee: International Business Machines Corporation
    Inventors: Shaji Farooq, Govindarajan Natarajan, Srinivasa S. N. Reddy, Richard A. Shelleman, Nancy C. Stoffel, Rao V. Vallabhaneni
  • Patent number: 5060844
    Abstract: Disclosed is a connector structure on a substrate which includes at least one first solder portion on the surface of the substrate; at least one second solder portion connected to each of the at least one first solder portions; and an epoxy layer disposed about the at least one first and second solder portions in such a manner as to cover the first solder portion and contact, but not cover, the second solder portion.Also disclosed is a connector structure on a substrate which includes at least one first solder portion on the surface of said substrate; at least one second solder ball portion connected to the at least one first solder portions; wherein the melting point of the second solder ball portion is relatively higher than that of the first solder portion.Finally, disclosed is a method of testing the solderability of the above structures.
    Type: Grant
    Filed: July 18, 1990
    Date of Patent: October 29, 1991
    Assignee: International Business Machines Corporation
    Inventors: John R. Behun, Anson J. Call, Francis F. Cappo, Marie S. Cole, Karl G. Hoebener, Bruno T. Klingel, John C. Milliken
  • Patent number: 5049201
    Abstract: Disclosed is a method of inhibiting corrosion on an electronic component. The method includes the steps of obtaining an electronic component and then cleaning the electronic component in a solution consisting of a complexing agent and a solvent in which the complexing agent is soluble. The complexing agent is a crown compound.
    Type: Grant
    Filed: June 22, 1989
    Date of Patent: September 17, 1991
    Assignee: International Business Machines Corporation
    Inventors: Shirley Cheng, Constance J. Araps, Allen J. Arnold, Jeffrey T. Coffin, Luu T. Nguyen
  • Patent number: 5029242
    Abstract: The structure consists of at least one glass-ceramic sheet (1) with holes (3) being filled with a conductive material (4) having a TCE slightly higher than that of the glass-ceramics and having undergone liquid phase sintering at the crystallization temperature of the glass-ceramic material (2) with the solid phase comprising conductive particles (5) and the liquid phase comprising at least a glass (6).The method comprises the steps of providing a green sheet comprising an organic vehicle and particles of a crystallizable first glass and having via holes, filling the via holes with a paste comprising an organic vehicle, and an inorganic material comprising conductive particles and at least a second glass being low viscous at the sintering temperature, firing the then present structure in a reducing, neutral or slightly oxidizing atmosphere with the temperature being slowly raised to said sintering temperature and slowly cooling the structure.
    Type: Grant
    Filed: May 10, 1990
    Date of Patent: July 2, 1991
    Assignee: International Business Machines Corporation
    Inventor: Manfred Sammet
  • Patent number: 5014117
    Abstract: An apparatus for removing heat from a heat generating device. The apparatus includes at least one heat conductive finned thermal device insert including a base having at least one first fin, and preferably haing a plurality of first fins, on a first surface and a second surface which is flat and a heat conductive second thermal device, preferably a cooling hat, having a plurality of second fins. The first fins are interspersed with the second fins. At least one of the first and second fins is of a thermally conductive, flexible material so that a gap otherwise existing between the interspersed fins is substantially eliminated. Finally, at least a portion of the first and second fins are biased against one another.
    Type: Grant
    Filed: March 30, 1990
    Date of Patent: May 7, 1991
    Assignee: International Business Machines Corporation
    Inventors: Joseph L. Horvath, Robert G. Biskeborn, Carl Yakubowski
  • Patent number: 4995942
    Abstract: A neutral or near neutral pH etching solution for effectively etching molybdenum and tungsten including: an aqueous ferricyanide ion solution, a soluble molybdate or tungstate, and an essential compound such that upon combination of said soluble molybdate or tungstate and said essential compound, a heteropoly compound is formed in which said essential compound contributes at least one heteroatom to said heteropoly compound.The etching solution is most preferably used for etching molybdenum or tungsten which is adhered or proximate to a base-sensitive material.
    Type: Grant
    Filed: April 30, 1990
    Date of Patent: February 26, 1991
    Assignee: International Business Machines Corporation
    Inventor: Lawrence D. David
  • Patent number: 4987211
    Abstract: Phenyl-endcapped depolymerizable polymers are disclosed. The phenyl endcap eliminates the reactive terminal vinyl group resulting in increased depolymerization threshold temperatures and reduced residue after depolymerization. A multilevel metal lift-off process using the phenyl-endcapped polymers is disclosed. Additionally, the polymers are improved ceramic glass binder resins.
    Type: Grant
    Filed: October 13, 1989
    Date of Patent: January 22, 1991
    Assignee: International Business Machines Corporation
    Inventors: Constance J. Araps, Jon A. Casey, Renuka S. Divakaruni, Steven M. Kandetzke, Chatherine A. Lotsko
  • Patent number: 4985310
    Abstract: Disclosed is a multilayered metallurgical structure for an electronic component. The structure includes a base metallurgy which includes one or more layers of chromium, titanium, zirconium, hafnium, niobium, molybdenum, tantalum, cooper and/or aluminum. Directly on the base metallurgy is a layer of cobalt. The structure may also include a layer of noble or relatively noble metal such as gold, platinum, palladium and/or tin directly on the cobalt.
    Type: Grant
    Filed: September 5, 1989
    Date of Patent: January 15, 1991
    Assignee: International Business Machines Corp.
    Inventors: Birendra N. Agarwala, Keith F. Beckman, Alice H. Cooper-Joselow, Chandrasekhar Narayan, Sampath Purushothaman, Sudipta K. Ray