Abstract: Providing a semiconductor device with a TFT structure with high reliability In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 107a is provided in an n-channel TFT. The LDD regions 113 overlaps the first wiring line 102a and does not overlap the second wiring line 107a. Thus, applying a gate voltage to the first wiring line forms the GOLD structure, while not applying forms the LLD structure. In this way, the GOLD structure and the LLD structure can be used appropriately in accordance with the respective specifications required for the circuits.

Abstract: An improved distribution box fixing device located on the distribution boxes intended to house a vehicle's electric and electronic distribution system, and being temporarily fixed to a support, so that said device has a U-shaped pin on the front part of the box, joined to it by one of its ends and the other end being free and fitted into a hole on the support made for this purpose.

Abstract: The present invention aims to provide simple, high-speed processing for the formation of an EL layer by an ink-jet method. A method of manufacturing an electro-optical device having good operation performance and high reliability, and in particular, a method of manufacturing an EL display device, is provided. The present invention forms EL layers continuously across a plurality of pixels when the EL layers are formed by the ink-jet method. Specifically, with respect to m columns and n rows of pixel electrodes arranged in a matrix state, the EL layers are formed so as to form stripes with respect to one certain selected row or one column. The EL layers may also be formed having an oblong shape or a rectangular shape with respect to each pixel electrode.

Abstract: In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.

Abstract: The present invention relates to Aralia extracts and a therapeutic agent comprising Aralia extracts as an active ingredient. The composition and therapeutic agent according to the present invention are effective in preventing cataract, delaying the development of cataract, and treating cataract. According to the present invention, extracts of Aralia are obtained by extraction with alcohol. Addition of myo-inositol or taurine to the extracts will result in a synergistic effect in the treatment of cataract. In addition, oral administration of beverages, galenicals, and nutraceuticals, which comprise Aralia extracts as an active ingredient, will be effective in prevention, delay and treatment of cataract caused by complications of diabetes. Aralia extracts will have the same effect in the case where they are used as an ophthalmic agent. They can also be used as an eye drop or an eye ointment.

Abstract: An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a crystalline semiconductor film with high quality equivalent to a single crystal. A first crystalline semiconductor film and a second crystalline semiconductor film are formed overlying a substrate, which integrally structure a crystalline semiconductor layer. The first and second crystalline semiconductor films are polycrystalline bodies aggregated with a plurality of crystal grains. However, the crystal grains are aligned toward a (101)-plane orientation at a ratio of 30 percent or greater, preferably 80 percent or greater.

Abstract: A mobile flange press adapted to be mounted on a flange of a workpiece I-beam and moved thereon including at least one clamp that contacts an underside of the flange of the workpiece I-beam, at least one hydraulic cylinder adapted to apply vertical downward pressure on the flange with resulting upward pressure at the ends of the flange to straighten the flange, and a drive mechanism for moving the mobile flange press along the flange of the workpiece I-beam to another portion of the flange. In addition, a method of straightening flanges of a workpiece I-beam where the mobile flange press is moved along the workpiece I-beam while straightening the flange.

Abstract: A system for detecting and locating an underground object having stationary RF transmitter receivers that define a coordinate system for an area of interest, a sensor adapted to detect presence of an underground object and to provide a presence data, and a mobile RF transmitter receiver that is movable with the sensor, and is adapted to receive and/or transmit location data indicative of location of the mobile transmitter receiver in the coordinate system. A method is also provided for detecting and locating underground object including the steps of establishing a coordinate system for an area of interest, detecting presence of an underground object and providing a presence data upon detection of the underground object, and transmitting and/or receiving location data in a radio frequency, the location data being indicative of location of the underground object in the established coordinate system.

Abstract: An aided inertial navigation system and method for navigating a mobile object having constraints comprising an inertial measurement unit, a processor, and an error correction device. The inertial measurement unit provides acceleration data and/or angular velocity data of the mobile object. The processor is adapted to receive the acceleration data and/or angular velocity data, and to provide output data with position output indicative of position of the mobile object. The error correction device receives as input, state and dynamics information and auxiliary input data including map information associated with the path, speed data, wheel-angle data and discrete data. The error correction device provides as output, state corrections to the processor that enhance accuracy of the position output. The state corrections are used by the processor to estimate position of the mobile object based on the constraints to the mobile object and the map information associated with the path.

Abstract: The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

Abstract: There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture.

Abstract: There is provided a beam homogenizer which can unify the energy distribution of a linear laser beam in a longitudinal direction. In the beam homogenizer including cylindrical lens groups for dividing a beam, and a cylindrical lens and a cylindrical lens group for condensing the divided beams, the phases, in the longitudinal direction, of linear beams passing through individual cylindrical lenses of the cylindrical lens group for condensing the divided beams are shifted, and then, the beams are synthesized, so that the intensity of interference fringes of the linear beam on a surface to be irradiated is made uniform.

Abstract: In the case where the number of pixels is increased in a display device making use of electron source elements, a period, in which one pixel is caused to continue to emit light, shortened, and so there is caused a need of applying a high voltage between upper and lower electrodes of an electron source element in a short period. Therefore, there is caused a problem that a drive circuit is made severe in operating condition and so the display device is degraded in reliability. Two TFTs are arranged on each of pixels. Also, a time gradation system is used, in which one frame period is divided into a plurality of sub-frame periods, a light emitting or non-emitting state of each of the pixels is selected in the respective sub-frame periods, and gradation is represented by adding up periods, in which the light emitting state is selected in the respective sub-frame periods. Thus it is possible to provide a display device having a high reliability and a method of driving the same.

Abstract: An orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is increased, a distortion thereof is suppressed, and a TFT using such a crystalline semiconductor film is provided. At the time of formation of the amorphous semiconductor film (102) or after the formation thereof a noble gas element, typically, argon is included in the film and crystallization is performed therefor. Thus, an orientation ratio of the semiconductor film (104) can be increased and a distortion present in the semiconductor film (104) after the crystallization is suppressed as compared with that present in the semiconductor film before the crystallization. Then, the noble gas element in the film is removed or reduced by laser light irradiation performed later.

Abstract: A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.

Abstract: When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing condition is studied. When a length of one side of a rectangular substrate on which a semiconductor film is formed is b, a scanning speed is V, and acceleration necessary to attain the scanning speed V of the laser beam relative to the substrate is g, and when V=(gb/5.477)1/2 is satisfied, a time necessary for the laser annealing is made shortest. The acceleration g is made constant, however, when it is a function of time, a time-averaged value thereof can be used in place of the constant.

Abstract: A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

Abstract: Refractory metal layers 2, 4, 6, 8, and 10, and rare earth alloy magnetic layers 3, 5, 7, 9, 11, and 12 are alternately deposited, so as to form a multilayer structure including four or more layers on a substrate. The refractory metal layers 2, 4, 6, 8, and 10 are formed from at least one kind of material selected from a group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W, and each has a thickness of not less than 5 nm nor more than 50 nm. The rare earth alloy magnetic layers 3, 5, 7, 9, 11, and 12 have tetragonal R2Fe14B (R is Nd and/or Pr) as a primary constituent phase, and each has a thickness of not less than 50 nm nor more than 500 nm.

Abstract: A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.