Abstract: An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

Abstract: An internal combustion rotary engine which includes a housing encased rotor having: cam actuated inwardly and outwardly extending vanes, a combustion chamber communicating with a fluid inlet port to the vanes within the housing, and an exhaust chamber communicating with the fluid outlet port from the vanes of the housing, air and fuel injectors associated with the combustion chamber for delivery of an air and fuel mixture to the combustion chamber, and igniter means associated with the combustion chamber for igniting air and fuel mixture within that chamber. Controls are provided to properly control the sequence of air and fuel injection, fuel ignition and exhaust valve opening and closing during operation of the engine to provide simpler and more economical rotary engine.

Abstract: To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.

Abstract: A topical recognition apparatus for monitoring surface condition of a bowling lane surface and a method thereof. The apparatus has a lamp that provides light on the bowling lane surface, and a sensor positioned proximate to the bowling lane surface, the sensor being adapted to sense light provided by at least one lamp after the light is scattered off the bowling lane surface, the scattered light being indicative of a surface condition of the bowling lane. The surface condition of the bowling lane monitored may be the quantity of oil on the bowling lane surface and/or the amount of wear on the bowling lane surface.

Abstract: An electrolysis solution for electrolytic capacitors including an aqueous organic solvent consisting of water and a water-compatible organic solvent and 1,6-decane-dicarboxylic acid or salt thereof dissolved therein. The solution further contains one or more additives selected from dinitriles, pivalic acid and salts thereof, diesters, alkylated lactones, cyanoalkanoic esters, monocarbboxylic acids each having a C3-7 alkyl chain and substituted with two C1-4 alkyl groups at the &bgr;-position to the carboxyl group and salts thereof, monocarboxylic acids each having C3-7 alkyl chain and substituted with one ethyl group at the &agr;-position to the carboxyl group and salts thereof, and monocarboxylic acids derived from cyclic saturated compounds each having five or six ring-constituting carbon atoms and salts thereof.

Abstract: An object of this invention is to provide a semiconductor device manufacturing method in which a semiconductor film is formed over a substrate, the semiconductor film is crystallized by irradiating a laser light, a silicon oxide film is formed in contact with the crystalline semiconductor film by using organic silane, a gate electrode is formed in contact with the silicon oxide film, an impurity element is introduced into the crystalline semiconductor film, the impurity element is activated, an interlayer insulating film is formed over the gate electrode, and then a wiring comprising aluminum is formed over the interlayer insulating film.

Abstract: A product management method for securing interests of a just rightful claimant of an intellectual property right is provided. The product management method is a product management method for a display module including a circuit formed by integrating a transistor which is formed using a thin film semiconductor on an insulating substrate, which, in a manufacturing process of the transistor, forms characters, a figure, a symbol, or a numeral, or a combination thereof on any one of thin films constituting the transistor, indicates attribution of an intellectual property right pertaining to the display module according to the characters, the figure, the symbol, or the numeral, or the combination thereof, and secures interests of a just rightful claimant of an intellectual property right.

Abstract: The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.

Abstract: The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity.

Abstract: A chemical vapor reaction processing apparatus including a reaction chamber; a power source; a source of a reactive film forming gas; a device for inputting the reactive film forming gas into the chamber; a pair of electrodes connected to the power source, at least a portion of the pair of electrodes being provided in the reaction chamber; a power source for supplying a first electric power into the reaction chamber through the pair of electrodes to generate a plasma of the reactive film forming gas in the chamber for providing a plasma CVD deposition of the reactive film forming gas on a surface; a source of a reactive cleaning gas; a device for inputting the reactive cleaning gas into the chamber where the power source supplies a second electric power into the reaction chamber through the pair of electrodes to generate a plasma of the reactive cleaning gas in the chamber so that an inner wall of the chamber is cleaned by the plasma.

Abstract: A shield for controlling air, spray and airborne debris generated by a wheel of an automotive vehicle when traveling on a roadway surface. The shield includes a planar frame having front and rear surfaces and top, side and bottom borders. The shield is adapted to be disposed above the roadway surface vertically depending from the vehicle and spaced rearwardly from the vehicle wheel in a plane extending transversely to the vehicle. A plurality of downwardly and rearwardly oriented louvers are fixed on the frame to extend rearwardly beyond its rear surface, so as to be oriented horizontally (when the shield is in position on the vehicle) between the side borders, and the louvers are shaped so as to permit, when the vehicle is moving, a flow of air, spray and airborne debris through the shield and downward deflection thereof as they pass between louvers.

Abstract: An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.

Abstract: In the production of thin film transistor (TFT), a gate insulating film is formed to cover an active layer, a titanium nitride film is formed on the gate insulating film, and an aluminum film used as the gate electrode is formed on the titanium nitride film. The resulted configuration prevents the etching of the aluminum film from the insulating film side even if the etchant of aluminum enters the recessed portion at the edge of the active layer during the patterning of the gate electrode. Also in the anodizing process, when an oxide film is formed on the surface of the aluminum film, the oxidation of aluminum from the gate insulating film side is prevented even when the electrolyte solution enters the recessed portion at the edge of the active layer.

Abstract: A digital driver for display devices which can prevent the delay of digital data and the extended transition time of the digital data, and thus can make good display, and a display device including the above-mentioned digital driver are disclosed. The digital driver according to the present invention is constituted in such a manner that, by successively inputting digital data to a shift register, the digital data are shifted in the shift register, and the resulting output is sent out to latch circuits. Since the digital data are directly inputted to the shift register, the distance over which the data lines are laid around can be shortened, the increase in load due to the laying-around of the data lines which has so far been a problem can be prevented, and the delay of the digital data and the extended transition time of the digital data can be prevented.

Abstract: A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an f&thgr; lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed.

Abstract: A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.

Abstract: Polyamide elastomer comprising a hard segment derived from polyamide having no divalent aromatic group and a soft segment derived from polycarbonate diol having no divalent aromatic group has high flexibility and high heat resistance in addition to good physical characteristics of the known polyamide elastomers.

Abstract: A precision positioning unit composed of a table on which an article is to be placed, a linearly movable rod which is connected with the table at one end and further connected with a rod actuating device at another end, in which the rod actuating device is capable of linearly moving the rod forward and backward, has the following characteristics: the rod is connected with the actuating device via cushion mechanism; and by the side of the rod is placed a rod movement control device composed of an elastic member, a ultrasonic transducer, and a ultrasonic emitting surface, in which the elastic member is constituted to push the ultrasonic emitting surface to a side surface of the rod when the transducer is inactive, and the transducer functioning to draw the ultrasonic emitting surface away from the rod when it is active.

Abstract: When a cloth article being treated is sandwiched between a main roll 1 and a heating bed 1a and sent in the direction indicated by arrow L is sucked onto a suction roll 15a about which a guide belt 15d has been wound, the transfer of the cloth article being treated to that guide belt 15d is aided, and, in particular, the continued turning of the article being treated together with that main roll, in a condition where it is stuck to the surface of the main roll 1 is prevented. In order to attain the object stated above, compressed air is blown as indicated by arrow j from an air jet pipe 21 having nozzle holes bored therein. The article being treated blown by the compressed air flow is blown away from the main roll 1, sucked over to the suction roll 15a as indicated by arrow s, transferred to the suction belt 15d, and conveyed along as indicated by arrow e.

Abstract: To make improvements in a conventional slotted bow tie antenna to make it possible to (a) broaden the tuning frequency band, (b) function as a dual band antenna, without diminishing the “advantage of enabling a thin shape and possessing directivity”. When the symmetrical axis in the longitudinal direction of the bow tie shaped slot is set as x, and the symmetrical axis perpendicular thereto is set as y, a narrow and long parasitic element is placed over and across in the y axis direction, and this parasitic element is insulated electrically from a metal foil provided with a slot, using an insulator, for example. Further, by using two parasitic elements and arranging them in parallel while electrically insulating them from each other, the antenna can also function as a dual band antenna.