Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. At least one doped column having a dopant of a second conductivity type is located in the epitaxial layer, adjacent a sidewall of the trench. The trench is etched using an etchant gas that also serves as a dopant source for the formation of the doped column. For example, if a p-type dopant such as boron is desired, BCl3 may be used as the etchant gas. Alternatively, if an n-type dopant such as phosphorus is required, PH3 may be used as the etchant gas. The dopant present in the gas is incorporated into the silicon defining the surfaces of the trench. This dopant is subsequently diffused to form the doped column surrounding the trench.

Abstract: A method and system for decoding a transport stream are disclosed. In one embodiment, the method includes receiving a system information table in the transport stream, reading an activation time from the system information table, storing the table in a memory without activating values contained in the system information table, determining when the activation time is reached, and activating the values contained in the system information table when the activation time is reached. An advantage of the present invention is that the program and system information tables can be transmitted less frequently and still allow the receiver to execute the acquired “next” tables in a timely manner, once the tables have been received for the first time and their activation times have arrived. Another advantage of the present invention is its backward compatibility with the existing protocol formats, because the present invention requires no syntactic modification to the existing table formats.

Abstract: A method and apparatus is provided for interleaving and de-interleaving frame symbols using a single memory buffer. Input frame symbols are read out in an interleaved sequence (or de-interleaved sequence) on a symbol by symbol basis. Frame symbols following the input frame symbols are written into memory locations from where the input frame symbols were read.

Abstract: A Schottky rectifier includes a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region. The semiconductor structure includes a cathode region of the first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face. The drift region has a lower net doping concentration than that of the cathode region. A plurality of trenches extends from the second face into the semiconductor structure and defines a plurality of mesas within the semiconductor structure. At least one of the trenches is located in each of the active and the termination semiconductor regions. A first insulating region is located adjacent the semiconductor structure in the plurality of trenches. A second insulating region electrically isolates the active semiconductor region from the termination semiconductor region.

Abstract: A DMOS device is provided which is equipped with a floating gate having a first and second electrode in close proximity thereto. The floating gate is separated from one of the first and second electrodes by a thin layer of dielectric material whose dimensions and composition permit charge carriers to tunnel through the dielectric layer either to or from the floating gate. This tunneling phenomenon can be used to create a threshold voltage that may be adjusted to provide a precise current by placing a voltage between a programming electrode and the body/source and gate electrode of the device.

Abstract: A method and apparatus is provided for heating or cooling at least a selected portion of a patient's body. The method begins by inserting a catheter having a balloon into the colon or stomach of the patient. A heated or chilled fluid is conducted through a supply lumen of the catheter and into the balloon. The fluid is evacuated from the balloon through a return lumen of the catheter.

Abstract: A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions.

Abstract: An additional phosphor-excitation mechanism improves the light output of a visible-light emitting phosphor. One excitation mechanism indirectly excites the visible-light emitting phosphor by first striking a non-visible-light emitting particle (such as an ultra-violet-emitting phosphor) with an electron beam, which then emits non-visible radiation that strikes a visible-light emitting phosphor. The non-visible-light emitting particles can be disposed behind and/or adjacent to die visible-light emitting phosphors. A second mechanism directly excites the visible-light emitting phosphor by directly striking the visible-light emitting phosphor with an electron beam. Thus, the same visible-light emitting phosphor is activated by the first indirect mechanism as well as the second direct mechanism.

Abstract: A trench MOSFET includes a plurality of trench segments in an upper surface of an epitaxial layer, extending through a second conductivity type region into a first conductivity type epitaxial region, segment at least partially separated from an adjacent segment by a terminating region, and the trench segments defining a plurality of polygonal body regions within the second conductivity type. A first insulating layer at least partially lines each trench and a plurality of first conductive regions are provided within the trench segments adjacent to the first layer. Each of the conductive regions is connected to an adjacent first conductive region by a connecting conductive region, overlying the terminating region, that bridges at least one of the terminating regions and a plurality of first conductivity type source regions are within upper portions of the polygonal body regions and adjacent the trench segments, the source regions positioned outside the terminating regions.

Abstract: A double diffused field effect transistor and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type. Next, at least one dopant species, also of the first conductivity type, is introduced into a surface of the substrate so that the substrate has a nonuniform doping profile. An epitaxial layer of the first conductivity type is formed over the substrate and one or more body regions of a second conductivity type are formed within the epitaxial layer. A plurality of source regions of the first conductivity type are then formed within the body regions. Finally, a gate region is formed, which is adjacent to the body regions.

Abstract: A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or “programmed” by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense, since only new contact, metal and pad masks, or new metal and pad mask are required for each new device. Wafers may also be manufactured and stored at an inventory location prior to contact or metal mask, significantly reducing the time required to manufacture new devices. It is also be possible to qualify a family of devices made using this approach without qualifying each device. In addition, the location of the source or the source and gate bonding pads may be easily moved for assembly in a new package or for a new application.

Abstract: A method and apparatus is provided for use in providing real-time, packet-switched service to an end-user over a cable data network. The method begins by transmitting over the cable data network a scheduled grant to an end-user gateway in accordance with an unsolicited grant service protocol. The grant authorizes the end-user gateway to transmit a data packet to a cable modem termination system (CMTS) located in the cable data network. Next, an adjustment is made to the time at which subsequent grants are transmitted. The adjustment, which is based on a response of the end-user gateway, is performed to reduce delay between a time when a subsequent data packet is generated and receipt of the subsequent grant.

Abstract: A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.

Abstract: A telephony system 10 having automatic timing adjustment for diverse routing of HFC systems has a signal stream routing through a signal line loop between a head-end 120 and at least one communication unit 16, i.e., a cable modem cable access unit (CAU). If a fault occurs within the signal line loop, recognized by the head-end 120 when a short uplink burst from the communication unit 16 does not align within a predetermined timing window based on a value in the database, the head-end will adjust the cycle through predetermined delay parameters, corresponding to various alternate signal line loops made up of redundant signal lines. An information processor is provided at the head-end 120 of the HFC system 10 for automatically adjusting the timing of the signal stream in order to maintain the database determined at the information processor at the head-end 120. The timing adjustment of the signal stream is communicated between the head-end 120 and the communication units, CAUs 16.

Abstract: An intravascular heat transfer device is provided with a mixing-inducing surface formed by an easily manufacturable process. The device can have a plurality of elongated, articulated segments, each having a mixing-inducing exterior surface. A flexible joint connects adjacent elongated, articulated segments. The device may be conveniently formed, e.g., by vapor deposition or molding, and further lacks undercuts so that the same may be conveniently removed from, e.g., a two-part mold.

Abstract: A system and method are disclosed that accepts different types of signals from multiple sources and routes the signals to the appropriate devices for conversion or other processing so that each signal is in a common or desired format, such as the MPEG standard. The individual signal streams are packetized so that each signal stream carries identifying information associated with it originating signal source and then multiplexed onto a single digital transport stream for storage. Such a system allows overlapping signals of different types from multiple sources to be processed and stored in a single storage device. Each of the signals can then be subsequently retrieved for playback or display.

Abstract: In a system, device, and method for selecting a channel from among a plurality of channels, a number of available channels are selected for testing. A channel quality measurement is made for each of the number of available channels. The channel having the best channel quality measurement is then selected. To make the channel quality measurements, a primary station selects a channel to be tested and also selects a secondary station with which to perform the test. The primary station transmits a control frame to the selected secondary station, including a channel identifier identifying the selected channel. Upon receiving the control frame, the selected secondary station adjusts its transmitter to the selected channel based on the channel identifier in the control frame, and transmits a reference signal on the selected channel. Meanwhile, the primary station adjusts its receiver to the selected channel and receives the reference signal from the selected secondary station.

Abstract: A catheter system and method are provided which change the temperature of a fluid, such as blood, by heat transfer. Selective cooling or heating of an organ may be performed by changing the temperature of the blood feeding the organ. The catheter system includes an inlet lumen and an outlet lumen structured and arranged to carry a working fluid having a temperature different from the adjacent blood. The outlet lumen is configured to induce turbulence in the adjacent fluid passing adjacent the outlet lumen.

Abstract: A coupler for coupling a projection lens to a cathode ray tube consists of a metallic plate having a first side and a second side, the first side for mounting to the faceplate of the cathode ray tube in a fluid tight relationship and the second side for mounting to a lens plate. The metallic plate is covered with a non-reflective coating and has at least one through hole for mounting to CRT rails. A plurality of ribbs protrude from the second side of the metallic plate from at least one of the at least one through holes and the ribbs surround the through hole. Upon mounting of a fastening device in the at least one through hole, the fastening device comes into contact with a top surface of the ribbs and the non-reflective coating is removed from the ribbs, thereby forming a ground connection for the coupler.

Abstract: A heat transfer device has first and second elongated, articulated segments, each having a turbulence-inducing exterior surface. A flexible joint connects the first and second elongated, articulated segments. An inner coaxial lumen is disposed within the first and second elongated, articulated segments.