Abstract: A crosslinked object of a polybenzoxazine-based compound formed of a polymerized resultant of a first monofunctional benzoxazine-based monomer or a second multifunctional benzoxazine-based monomer with a crosslinkable compound, an electrolyte membrane including the crosslinked object, a method of preparing the electrolyte membrane, and a fuel cell employing the electrolyte membrane including the crosslinked object.

Abstract: A fuel cell cartridge includes a fuel pouch to store fuel, the fuel pouch including a fuel outlet; a pressing unit to press the fuel pouch; a variable resistor provided near the fuel pouch; a sensor provided on the pressing unit to read a resistance value of the variable resistor; and a contact pad to transmit an output voltage determined by the resistance value outside the fuel cell cartridge.

Abstract: A composition includes a boron-containing hydrogen silsesquioxane polymer having a structure that includes: silicon-oxygen-silicon units, and oxygen-boron-oxygen linkages in which the boron is trivalent, wherein two silicon-oxygen-silicon units are covalently bound by an oxygen-boron-oxygen linkage therebetween.

Abstract: A hybrid siloxane polymer, an encapsulant, and an electronic device, the hybrid siloxane polymer including a linear first siloxane resin including moieties represented by the following Chemical Formulas 1a and 1b, the first siloxane resin including double bonds at both terminal ends thereof, and a second siloxane resin having a reticular structure:

Abstract: A capacitor structure includes a plurality of lower electrodes on a substrate, the lower electrodes having planar top surfaces and being arranged in a first direction to define a lower electrode column, a plurality of lower electrode columns being arranged in a second direction perpendicular to the first direction to define a lower electrode matrix, a plurality of supports on upper sidewalls of at least two adjacent lower electrodes, a dielectric layer on the lower electrodes and the supports, and an upper electrode on the dielectric layer.

Abstract: A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about ?70° C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100° C. or more.

Abstract: An organic light emitting display (OLED) device and a method of manufacturing the same, the OLED device including a first substrate having an organic emission unit on a surface thereof, a second substrate above the first substrate, an inorganic sealing member between the first substrate and the second substrate, the inorganic sealing member bonding the first substrate and the second substrate. and a filler, the filler filling a space between the first substrate and the second substrate, wherein a volume of the filler is greater than a volume of a space between the first substrate, the second substrate, and the inorganic sealing member prior to bonding the first substrate and the second substrate.

Abstract: A mask assembly includes a mask frame, the mask frame having an opening and a frame surrounding the opening, a pattern mask on the mask frame, the pattern mask including a pattern portion having at least one pattern overlapping the opening and a welding portion attached to the frame, and at least one support bar crossing the opening and attached to the pattern mask.

Abstract: A catalyst coated electrolyte membrane including an anode catalyst layer and a cathode catalyst layer at opposite sides thereof, respectively, wherein micro cracks of the anode catalyst layer or cathode catalyst layer occupy 0.01-1 area % of the total area of the respective anode catalyst layer or cathode catalyst layer, a fuel cell including the same, and a method of preparing the catalyst coated electrolyte membrane. In the catalyst coated electrolyte membrane, micro cracks of the cathode catalyst layer or the anode catalyst layer can be minimized and thus the resistance between the electrode catalyst layer and an electrolyte membrane can be minimized, and crossover of a fuel, such as methanol, ethanol, other alcohols, methane, etc., to a cathode electrode can be minimized, and thus the catalyst coated electrolyte membrane has improved performance and durability.

Abstract: A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.

Abstract: A method of fabricating a thin film transistor includes patterning the amorphous semiconductor layer to form an amorphous semiconductor layer pattern, forming a gate electrode corresponding to the amorphous semiconductor layer pattern on a gate insulating layer, forming an interlayer insulating layer on the entire surface of the substrate, forming a first contact hole partially exposing the amorphous semiconductor layer pattern, forming a second contact hole partially exposing the gate electrode, and forming a metal layer on the entire surface of the substrate. The method also includes applying an electrical field to the metal layer such that a semiconductor layer is formed by crystallization of the amorphous semiconductor layer pattern, and patterning the metal layer to form source and drain electrodes that are insulated from the gate electrode and that are electrically connected with the semiconductor layer through the first contact hole.

Abstract: A material for an organic photoelectric device includes a compound represented by the following Formula 1:

Abstract: Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a plurality of active pillars projecting from a semiconductor substrate, a gate pattern disposed on at least a portion of each of the active pillars with a gate insulator interposed therebetween, and a conductive line disposed on each of the active pillars and below the corresponding gate pattern, the conductive line may be insulated from the semiconductor substrate and the gate pattern, wherein each of the active pillars may include a drain region above the corresponding gate pattern, a body region adjacent to the corresponding gate pattern, and a source region that is in contact with the conductive line below the gate pattern.

Abstract: An image restoration method includes receiving an externally input image signal, generating a filtered image signal by filtering the input image signal, and generating a restored image signal by calculating a weighted average of the input image signal and the filtered image signal. Such a method may be implemented using an image restoration device including an image filtering unit adapted generated the filtered image signal, and an image mixing unit adapted to generate the restored image signal. More particularly, the restored image signal may be generated using weighting factors calculated based on the input image signal, by calculating a local variance of pixels in the input image signal, and calculating the weighting factor for each of the pixels based on the local variance of each of the pixels.

Abstract: A semiconductor memory device includes a bitline sensing amp detecting and amplifying data of a pair of bitlines from a memory cell, a column selecting unit transmitting the data of the pair of bitlines to a pair of local datalines in response to a column selecting signal, a dataline precharging unit precharging the pair of local datalines to a precharging voltage level in response to a precharging signal, and a dataline sensing amp detecting and amplifying data transmitted to the pair of local datalines. The dataline sensing amp includes a charge sync unit discharging the pair of local datalines at the precharging voltage level in response to a first dataline sensing enabling signal and data of the pair of local datalines, and a data sensing unit transmitting data of the pair of local datalines to a pair of global datalines in response to a second dataline sensing enabling signal.

Abstract: A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.

Abstract: An organic light emitting display includes a first switching element including a control electrode electrically coupled to a scan line and between a data line and a first voltage line, a driving transistor electrically coupled between the first voltage line and a second voltage line, a second switching element including a control electrode electrically coupled to a light emission control line and between the first voltage line and the driving transistor, a third switching element including a control electrode electrically coupled to the scan line and between the second switching element and the driving transistor, a first storage capacitor that is electrically coupled between the first voltage line and the control electrode of the driving transistor, a second storage capacitor that is electrically coupled between the first storage capacitor and the second switching element, and an OLED electrically coupled between the driving transistor and the second voltage line.

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*?, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, ? denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract: In a plasma display device, a first transistor is connected between an electrode and a power source supplying a first voltage, and a second transistor is connected to a control terminal of the first transistor. A first gate driver supplies a first control signal to the control terminal of the first transistor and is connected to the control terminal of the first transistor. A second gate driver supplies a second control signal to the second transistor, and is connected to the control terminal of the second transistor. Further, a diode is connected between an output terminal of the second gate driver and the control terminal of the first transistor.

Abstract: A light sensor circuit, includes a light receiving element coupled to a first power supply, a capacitor coupled between the light receiving element and a second power supply, a first transistor including a gate electrode coupled to a first electrode of the capacitor, and a second transistor including a gate electrode coupled to a selection signal line, wherein the first transistor is coupled between the selection signal line and a first electrode of the second transistor, and the second transistor is coupled between a second electrode of the first transistor and an output signal line.