Abstract: In semiconductor device 10 under this invention, bonding pads 20 are lined up in a staggered pattern on the main surface of semiconductor chip 14 which is mounted on insulated substrate 12. Multiple stud bumps are stacked on top of the pads 20a which are located on the inner rows, and these stud bumps comprise stud bump stack 28. Conductive wire 22 connects the lands 18 on the insulated substrate with the corresponding bonding pads 20. The wire is formed with its beginning at the land and its end at the bonding pad. Via the stud bump stacks 28, the ends of conductive wire 22a on the inner pads are in a higher position than the ends of conductive wires 22b on the outer pads, so that the problem of neighboring conductive wires coming into contact does not occur.

Abstract: The thermomechanical stress sensitivity of ball grid array (BGA) solder connections is significantly reduced, when the solder connections solidify in column-like contours after the reflow process—a result achieved by using the solder material in tapered openings of a thick sheet-like elastic polymer adhered to the BGA substrate and selected for its characteristics of non-wettability to solder and volumetric shrinkage greater than solder.

Abstract: A leadframe loader having a magnetic latch of predefined strength connecting a drive arm mechanism and a pusher system is the preferred embodiment of a transport loader. The amount of force applied to a pusher blade is set to a level below that where a leadframe, or other device to be pushed would be damaged by selecting the size and strength of a magnetic latch attached to the drive arm. The magnet is designed to break away from the steel coupling structure on the pusher when the force exceeds a preset value, and stops the movement before damage to the leadframe occurs. Calculated values were verified by physical testing, and a safety margin assigned to insure release of the magnet prior to bending leadframes. The system is assimilated into different pieces of semiconductor assembly equipment.

Abstract: An integrated circuit device with a low stress, thin film, protective overcoat having enhanced adhesion both to polymeric materials used in packaging semiconductor devices, and within the passivating film layers, including the following sequence of materials deposited by PECVD processing: a thin film of silicon dioxide, a layer of silicon nitride, oxy-nitride or silicon carbide, and a very thin topmost layer of silicon oxide.

Abstract: A semiconductor device architecture (200) is disclosed. Like unit circuits (202), arranged in rows and columns, are coupled to lower conductive segments (204a-204h). The lower conductive segments (204a-204h) are arranged in an “open” configuration, allowing adjacent unit circuits (202) be accessed simultaneously. The lower conductive segments (204a-204h) are coupled to higher conductive segments (208a-208f) by reconnector circuits (210a and 210b). The higher conductive segments (208a-208f) are arranged into folded pairs (208a/208d, 208b/208e and 208c/208f) between differential-type amplifiers (212a and 212b). The reconnector circuits (210a and 210b) each have a reconnect configuration and a switch configuration. In a reconnect configuration, the reconnector circuits (210a and 210b) couple adjacent folded higher conductive segment pairs to one another.

Abstract: A combined system and method for computer-controlled bonding and testing of wire connections between integrated circuit chips and substrates, and for automatically adjusting the bonding parameters in response to said testing, comprising the steps of forming a wire connection between said chip and said substrate under computer control to create wire attachments and a wire span; testing said wire connection automatically under computer control to generate test data; and automatically adjusting the bonding parameters of subsequent wire connections responsive to said test data, whereby the number of faulty bonds is reduced to near zero and bonding production downtime is substantially eliminated.

Abstract: A dynamic random access memory (DRAM) device comprises a substrate, a plurality of substantially parallel word lines, and a plurality of substantially parallel bit lines. A plurality of memory cells are formed at intersections of the word lines and bit lines. Each of the memory cells includes a pillar of semiconductor material which extends outward from the substrate. A storage node plug extends from a storage node through the pillar to a storage node contact and one of a drain and a source of a MOS transistor. A bit line plug extends from the bit line inwardly to the outer surface of the pillar to form a bit line contact and the other of the drain and the source of the MOS transistor. A word line plug extends from the word line through the pillar and a portion of the word line plug forms a gate of the MOS transistor. The storage node plug, bit line plug, and word line plug can be formed asymmetrically as substantially solid, unitary structures having a desired thickness for ease in manufacturing.

Abstract: A semiconductor package having a plurality of conductors arrayed in two (or more) parallel planes, and an available ground conductor. Conductors in the auxiliary or second plane substantially overlay the primary signal conductors in the first plane, and the impedance of any lead or lead pair is arbitrarily set at the assembly process by connecting the auxiliary conductors to ground or by leaving them floating. Differential pairs of signal conductors, either odd or even mode are set by connecting the auxiliary conductors to a ground contact.

Abstract: A computerized system and method for inspecting and measuring a ball-shaped wire bond formed by an automated bonder pre-programmed to attach a connecting bond onto a bond pad of an integrated circuit by first obtaining a first image of said bond pad before bond attachment, then determining the coordinates of the center of said pad. Second, the bonder is instructed to attach a ball-shaped wire bond to the center of said pad. Next, a second image of said bond pad is obtained after bond attachment; this second image comprises an image of the ball-shaped portion of the bond and an image of the wire portion of said bond. The coordinates of the center of the ball-shaped portion of the bond are obtained by computer processing of the first and second images. The coordinates of the bond center and the pad center are compared, creating information for quality control of the bonder instruction and the bonding process.

Abstract: A test structure that is readily and inexpensively configurable to interface with dies having different bond pad configurations is achieved by providing a blank test membrane having a conductive coating or a matrix of conductive lines formed thereon. Once a die bond pad configuration is known, the test membrane can be configured for the die bond pads by using a laser under software control to define connection pads correlating to the die bond pads and also to define interconnecting conductive traces from the connecting pads to contact pads that can be connected to test equipment. In one embodiment, the laser operates to ablate a continuous conductive coating, so as to form conductive pads and traces. In another embodiment, the laser is used to cut various lines in a matrix of conductive lines, so as to define conductive paths from the bond pads to the contact pads for connection to the test equipment.

Abstract: An apparatus for the fabrication of a semiconductor device comprising: a mold having top and bottom halves, each with cavities for holding semiconductor chips pre-assembled on an electrically insulating interposer; one of said halves having a plurality of runners and a plurality of gates for feeding encapsulation material into said cavities; said plurality of runners comprising pairs of runners parallel to each other, having gates opposite to each other, thereby forming dual gates; each pair of runners being configured such that encapsulation material will exit from adjacent gates concurrently; and each pair of dual gates being structured such that they fill the cavity between them uniformly with encapsulation material, thereby encapsulating thin semiconductor devices.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of lead-free solder on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal, usually copper or a copper alloy, having a modified surface adapted to provide bondability and solderability and adhesion to polymeric compounds. The modified surface comprises a layer created by converting a percentage of base metal atoms into substitutional metal complexes, usually hydrated chromates. A thin layer of plated copper may be employed for controlling uniformity and consistency of the replacement reaction.

Abstract: Low-cost plastic cavity-up land-grid array packages and ball-grid array packages are provided, suitable for wire-bonded chips having micromechanical components. The packages feature a thermal heat spreader and a protective lid. The package structure disclosed is flexible with regard to materials and geometrical detail, and provides solutions to specific functions such as storage space for chemical compounds within the enclosed cavity of the package.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off-spec or missing depositions. After identifying the wafer with off-spec metal layers, a layer of glass buffer is deposited over those wafers, which also fill any missing depositions at least partially. The glass-covered surface is then chemically-mechanically polished until the off-spec metal layers and at least a portion of the protective overcoat are removed, without damaging the copper metallization. Finally, a fresh layer of protective overcoat is deposited, selectively opened to expose the bond pads, and provided anew with one or more bondable metal layers.

Abstract: An integrated circuit wafer, covered by a protective overcoat, comprising an array of integrated circuit chips bordered by seal regions and separated by dicing lines; at least two sets of substantially parallel structures within each of said seal regions, each set extending along the edge of a chip on opposite sides of each said dicing line, respectively; each of said sets comprising at least one continuous barrier wall adjacent each chip, respectively; at least one sacrificial composite structure in combination therewith, between said wall and the center of said dicing line, said composite structure being a discontinuous barrier wall comprising metal rivets interconnecting electrically conductive layers in an alternating manner, whereby said composite structure provides mechanical strength to said sets and simultaneously disperses the energy associated with crack propagation; and at least one slot opened into said protective overcoat, reaching from the surface of said overcoat at least to the surface-nearest

Abstract: A leadframe for use with integrated circuit chips, comprising a leadframe base made of aluminum or aluminum alloy having a surface layer of zinc; a first layer of nickel on said zinc layer, said first nickel layer deposited to be compatible with aluminum and zinc; a layer of an alloy of nickel and a noble metal on said first nickel layer; a second layer of nickel on said alloy layer, said second nickel layer deposited to be suitable for lead bending and solder attachment; and an outermost layer of noble metal, whereby said leadframe is suitable for solder attachment to other parts, for wire bonding, and for corrosion protection.

Abstract: A robust, low inductance electronic package for small area semiconductor chips is provided which includes a flexible polymer film having electronic circuitry on one or more major surfaces, a bumped flip chip integrated circuit attached to the first surface, an array of solder balls to the second surface, and the device encapsulated in a plastic molding compound. An assembly and packaging method is disclosed wherein multiple devices are encapsulated simultaneously on a continuous polymer film, thereby providing a method compatible with high volume and low cost manufacturing processes and equipment.

Abstract: An electrical connection web, operable at high frequency and configured on a dielectric substrate, comprising a plurality of generally parallel signal lines having graduated width and variable spacings, and said widths and spacings cooperatively selected such that the characteristic impedance of said signal lines is approximately the same for each line of said plurality and approximately constant over the length of each said signal line, whereby signal integrity for each said line is enhanced and cross talk between said lines is reduced.

Abstract: A flexible carrier tape system, suitable for housing components and for winding on a reel in high density, is disclosed, comprising an elongated base strip having a plurality of longitudinally spaced cavities with side walls having a step-like groove near the surface around the cavity, comprising further an elongated cover strip having a width matching the width of the cavity including the widths of the grooves, the cover strip sealed onto the base strip so that the cover strip rests on the step-like grooves. In one embodiment, the sealed cover strip forms a substantially uniform plane with the upper surface of the base strip. The thickness consumed by each tape winding becomes a minimum so that a high density of components can be stored and transported.