Abstract: A method of forming a gate on a silicon substrate with a preformed film of gate oxide. A polysilicon layer is formed on the gate oxide. A slit is then formed in a predetermined area of the polysilicon layer. A masking layer is formed on the surface of the polysilicon layer surrounded by the slit. Exposed polysilicon is then removed, and the masking layer is removed.

Abstract: A method of fabricating a storage electrode of a storage capacitor of a semiconductor memory device, that includes a substrate, and a transfer transistor formed on the substrate. A first conductive layer is formed connected to the source/drain region. A first insulating layer is then formed over the first conductive layer. A first film is on a portion of the first insulating layer and a second film on the first film, wherein the first film and the second film form a stacked layer, the stacked layer having a sidewall. A second insulating layer is formed on the sidewall of the stacked layer. A third insulating layer is then over the substrate. The second insulating layer and a portion of the first insulating layer therebeneath are removed to form a first opening in the first insulating layer without exposing the first conductive layer. The fourth insulating layer is then removed and a second conductive layer is formed over the substrate and so as to substantially fill the first opening.

Abstract: The pull down transistor of a static SRAM semiconductor device is formed with oxide and polysilicon regions formed on a doped silicon substrate. A masking area is formed over the drain side of the polysilicon and the areas of the drain region proximal to the gate in the silicon and oxide layers below. N+ dopant is implanted into the unmasked areas of said substrate about the polysilicon region with the drain doping offset by the resist overlying the proximal portion of the drain region. A spacer is formed by chemical vapor deposition about the polysilicon region. Next an N- implantation follows with the offset provided by the spacers about the polysilicon region.

Abstract: An illumination system having improved efficiency and uniformity for an image projection apparatus. The illumination system is employed for supplying an optical radiation beam along a principal axis to illuminate an object which, in a plane perpendicular to the principal axis, has a non-round cross-section. The illumination system includes: a light source for emitting light beams; a reflective mirror, having a plurality of reflective curved surfaces for reflecting the light beams emitted from the light source to form a plurality of reflective beams; and a lens plate, having a plurality of lenses, each of the plurality of lenses corresponding to a reflective curved surface of the reflective mirror to project the plurality of reflective beams onto the object, so that the plurality of reflective beams are superimposed on the object and produce a uniform illumination.

Abstract: An apparatus and method for software protection utilizing a read-write memory device having output data that is inconsistent with the corresponding input data. An emulator detector monitors address inputs to the memory device and detects suspect addressing that indicates an unauthorized memory access is taking place. Upon detection of suspect addressing, the emulator detector switches the memory into a mode in which the memory generates erroneous data, either continuously or intermittently. In addition, the emulator detector can drive a system bus, such as an address bus, a data bus, or a control bus, to a high or low state, either continuously or intermittently, causing an erroneous data read or failure of the emulator system.

Abstract: A vacuum pencil holder for holding a vacuum pencil used for picking up semiconductor dies or chips during fabrication of integrated circuit devices. The vacuum pencil holder has a wand stand adjustable in angular position about an elongated supportive member to which it is fastened, so that a vacuum pencil placed on the wand stand can always be turned to a position within reach of a fabrication engineer. The vacuum pencil holder includes a curved piece integrally joined to the wand stand. A pair of bearing members, each of which is substantially half-cylinder shaped, are attached to opposite sides of the elongated supportive member so as to form a cylindrical bearing member surrounding the elongated supportive member. The curved piece is slidably inset in slots formed on the curved surface of the two bearing members. The vacuum pencil holder can thus be turned about the elongated supportive member, allowing the wand stand to be adjusted in position.

Abstract: A polishing pad is conditioned using a conditioning disc whose temperature is controlled upon Chemical Mechanical Polish. The temperature of the polishing pad remains unchanged upon conditioning and uniform CMP can be carried out.

Abstract: A clock distributing circuit, that comprises a clock distribution output circuit for inputting an external clock, outputting a first clock that synchronizes with the external clock, and distributing the first clock to each of load circuits, and a distributed clock input circuit disposed on input stages of all or part of the load circuits and adapted for inputting the first clock and outputting a second clock that synchronizes with the input clock, wherein one of the clock distribution output circuit and the distributed clock input circuit includes a phase difference-voltage converting circuit for converting the phase difference between the input clock and the output clock into a voltage, and a voltage control type delay circuit for delaying the input clock corresponding to an output voltage of the phase difference-voltage converting circuit and for outputting the delayed input clock.

Abstract: A digital modulator capable of obtaining a high FM modulation index and reducing the quantization noise without increasing the sampling frequency of an A/D converter of input voice. A phase variation .phi.(Ts) of the digital data (Ts is the sampling period) produced on the basis of the output from the A/D converter is divided by a predetermined integer N (N>1) by a divider, and is fed to an integrator. The integrator integrates the divided phase variation .phi.(Ts)/N for every time interval Ts/N, thereby producing a phase component .phi.(t) of the complex envelope of the modulation signal. The phase component .phi.(t) is resolved into cosine and sine components at the time interval Ts/N. The cosine and sine signals are D/A converted into analog signals which are quadrature modulated by a quadrature modulator.

Abstract: A code-excited linear predictive coder or decoder for a speech signal has an adaptive codebook, a stochastic codebook, and a pulse codebook. A constant excitation signal is obtained by choosing between a stochastic excitation signal selected from the stochastic codebook and an impulsive excitation signal selected from the pulse codebook. The constant excitation signal is filtered to produce a varied excitation signal more closely resembling the original speech signal. The varied excitation signal is combined with an adaptive excitation signal selected from the adaptive codebook to produce a final excitation signal, which is filtered to generate a synthesized speech signal. The final excitation signal is also used to update the adaptive codebook.

Abstract: A single-lens optical pick-up head has a laser diode, a beam splitter, a collimator, a polarizing light converter, a polarization controller, a polarizing beam splitter, a first quarter-wavelength plate, a mirror, a second quarter-wavelength plate, a convex mirror, an objective lens and a photodetector, for use in accessing DVD and CD discs by switching its optical property between two states.

Abstract: A liquid-crystal projection display system with higher efficiency is provided. The liquid-crystal projection display system comprises a double-layer square-pillar-like integrator, including an inner layer and an outer layer, having a polarization-separating thin film formed between the inner layer and the outer layer. The system also includes a converging light source for generating light converged at a point near one end surface of the double-layer square-pillar-like integrator, so that most light emitted from the light source enters the double-layer square-pillar-like integrator, and different polarized light is transmitted by being totally reflected off of surfaces of the inner layer and the outer layer respectively. A first lens is provided for forming real light spots on an image plane from virtual light spots formed by totally reflecting the different polarized light transmitted in the double-layer square-pillar-like integrator.

Abstract: A method is provided for inspecting an integrated circuit chip by use of a charged-particle microscope, such as an electron or ion-beam microscope, without incurring charge effect and thermal damage to the chip. Fundamentally, the method features the forming of a coating of good electrical and heat conductive material on the back of the target portion such that the charged particles from the microscope, after passing through the target portion, will encounter the coating of good electrical and heat conductive material and thus be drawn away by the same. As a result of this, the adverse consequences of charge effect and thermal damage can be prevented. This also allows for an increase in the resolution of the resultant image of the inspected chip.

Abstract: A method of forming a phase-shift photomask that reduces the defect density, manufacture cost, and fabrication processing time. A transparent layer is prepared. Then a light-transmissive thin film and a light-blocking thin film are successively formed over the transparent layer. Using a photoresist mask, a first anisotropic etch is performed on the wafer to remove exposed parts of the light-transmissive thin film and the light-blocking thin film. An isotropic etch is then performed on the photoresist layer so as to uncover a specific width of an edge part of the light-blocking thin film. Using the etched photoresist layer as a mask, a second anisotropic etch is performed on the light-blocking thin film. The photoresist layer is then removed to form the desired phase-shift photomask.

Abstract: A digital video disc optical pick-up head system has a laser light source, a beam splitter, a collimating len, a polarization changer, a deflecting mirror, an optical crystal assembly, an objective len and a photosensor assembly. These optical components together constitute an optical pick-up head system that generates only a single focus at any one time. When an alternative focus is required, polarized light of an alternative polarization is used for generating a detectable opto-electrical signal for the photosensor.

Abstract: A storage capacitor structural configuration for memory cell units of DRAM devices and a process for constructing the capacitor. The capacitor includes a first electrode and a second electrode that are each electrically conducting layers, and a storage dielectric that is a dielectric layer sandwiched between the two electrodes. The silicon substrate of the device has formed thereon a field oxide layer and a transistor including a gate and a pair of source/drain regions. A first dielectric layer covers the transistor and includes a contact opening over one of the source/drain regions. The first electrode includes a first electrically conducting layer formed inside the contact opening and covering the revealed surface of the source/drain region and the first dielectric layer. A second electrically conducting layer having a rugged surface is formed on the surface of the first electrically conducting layer.

Abstract: Fabricating a DRAM memory cell with increased capacitance by increasing the surface area of a storage electrode of a storage capacitor includes forming transfer transistor having a gate electrode and source-drain electrode areas on a semiconductor substrate. First, second and third insulating layers are formed in sequence on the semiconductor substrate and the transfer transistor. The third, second and first insulating layers are selectively etched through to form a contact opening exposing one of the source-drain electrode areas as a contact area. An upper portion of the third insulating layer is etched to form a plurality of first trenches. A first conductive layer is formed over the insulating layer filling the contact opening and the first trenches. An upper portion of the first conductive layer is etched to form a plurality of second trenches, and selectively etched to define a pattern area of a storage electrode of a capacitor.

Abstract: A semiconductor memory device with a tree-type capacitor having increased area for reliable storage thereon of electrical charges representative of data. The tree-type capacitor includes a storage electrode consisting of a trunk-like conductive layer and at least a branch-like conductive layer. The trunk-like conductive layer is electrically coupled to one of the source/drain regions of the transfer transistor in the semiconductor memory device and extends substantially upright. The branch-like conductive layer has one end connected to the trunk-like conductive layer and can be structured in various shapes that allow the branch-like conductive layer to have an increased surface area. A dielectric layer is formed over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer and an overlaying conductive layer is formed over the dielectric layer which serves as an opposing electrode for the tree-type capacitor.