Abstract: The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

Abstract: A method for fabricating a high aperture ratio and low contact resistance, TFT structure and devices formed by such method are disclosed. In the method, a source/drain metal layer is deposited directly on a n+ amorphous silicon layer such that the contact resistance of the transistor structure can be significantly reduced. The final deposition of a transparent electrode layer, such as of an ITO material, improves the aperture ratio for the transistor. Numerous other processing benefits are also provided by the present invention novel method such that a more reliable transistor and a capacitor that has more stable storage capacitance can be formed with the transistor. A back channel etched inverted staggered type TFT that has high aperture ratio and low contact resistance is thus provided by the present invention novel method.

Abstract: A static random access memory (SRAM) cell is formed by a tunnel switched diode (TSD) and a pair of transistors. The TSD has a characteristic I-V curve exhibiting a negative differential resistance region that allows the TSD to function as a bi-stable storage device. NMOS and PMOS transistors coupled between the TSD and word and bit lines function to access the TSD for purposes of address, read and write functions of the cell. The cells can be connected in high density, high performance arrays. The TSD's are formed from layered materials that result in small cell size while allowing for high level of cell current.

Abstract: The two dimensional intensity profile of radiation applied to a semiconductor wafer during photolithography is controlled by passing the radiation beam through an attenuating member before the beam is imaged by a mask onto the wafer. The attenuating member is preferably ring shaped and is formed of a semi-transparent material such as Mo Bi Si O4, or a material that is partially reflective of the radiation.

Abstract: A reference cell circuit 50 for split gate flash memory. The reference cell circuit 50 includes an odd split gate cell 52 and an even split gate cell 54. The control gate 56 of the odd cell 52 is coupled to an address bit line XADR[0], and the control gate 64 of the even gate cell is coupled to the output of an inverter 66 which inverts the signal from XADR[0]. The floating gates 58, 68 of the odd cell 52 and even cell 54 are each coupled to a constant voltage signal Vdd. By placing signals on line XADR[0], cells 52, 54 may be selectively activated and deactivated.

Abstract: The present invention is concerned with an interconnect structure for providing electrical communication between an interconnect and a contact in a semiconductor device which includes a contact formed of aluminum or aluminum-copper, an aluminum-copper alloy film which is capable of substantially preventing the contact from being etched by an etchant and which covers substantially the contact, and an interconnect line formed of aluminum or aluminum-copper which at least partially covers the aluminum-copper film sufficient to provide electrical communication between the interconnect line and the contact. The present invention also provides a method for fabricating such interconnect structure.

Abstract: The present invention generally relates to a system and a method for reclaiming process water in a manufacturing plant and more particularly, relates to a system and a method for reclaiming process water from a cooling tower exhaust gas which contains at least 80% relative humidity by utilizing a heat exchanger equipped with cooling elements that are cooled by a flow of exhaust gas formed by a general exhaust and a scrubber exhaust from a semiconductor fabrication facility.

Abstract: The present invention discloses a method and apparatus for forming solder bumps by a molten solder screening technique in which a flexible die head constructed of a metal sheet is utilized for maintaining an intimate contact between the die head and a solder receiving mold surface, The flexible die head, when used in combination with a pressure means, is capable of conforming to any curved mold surface as long as the curvature is not more than 2.5 &mgr;m per inch of die length. The present invention further provides a method and apparatus for filling a multiplicity of cavities in a mold surface by providing a stream of molten solder and then intimately contacting the surface of the molten solder with a multiplicity of cavities such that the molten solder readily fills the cavities. The apparatus further provides means for removing excess molten solder from the surface of the mold without disturbing the molten solder already filled in the cavities.

Abstract: A conformal disk holder for holding a rotating disk against a surface of a polishing pad is described. The conformal disk holder can be used for any polishing apparatus, but is particularly suited for use in a CMP pad conditioning disk. The conformal disk holder is constructed by a cover member, a flexural plate member and a base member. The flexural plate member has a center protrusion with a downwardly facing convex surface for intimately engaging an upwardly facing concave surface on a center protrusion of the base member. The intimate engagement between the convex surface and the concave surface allows at least a 5° tilt of the base member from a horizontal plane, and preferably allows a tilt between about 5° and about 30°.

Abstract: Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a crystalline silicon substrate along a specific crystallographic plane is utilized to form a crystalline silicon face plate used in the present invention hybrid mold. In a preferred embodiment, a silicon face plate is bonded to a borosilicate glass backing plate by adhesive means in a method that ensures coplanarity is achieved between the top surfaces of the silicon face plate and the glass backing plate. In an alternate embodiment, an additional glass frame is used for bonding a silicon face plate to a glass backing plate, again with ensured coplanarity between the top surfaces of the silicon face plate and the glass frame. In a second alternate embodiment, a silicon face plate is encased in an extender material which may be borosilicate glass or a polymer.

Abstract: A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed in a dielectric layer to expose an underlying conductive layer. The electronic substrate is then positioned in a cold-wall, low pressure chemical vapor deposition chamber, while the substrate is heated to a temperature of at least 350° C. A precursor gas is then flowed into the CVD chamber to a partial pressure of not higher than 10 mTorr, and metal is deposited from the precursor gas onto sidewalls of the via openings while bottoms of the via openings are substantially uncovered by the metal. The present invention method may be further enhanced by, optionally, modifications of a I-PVD technique or a seed layer deposition technique.

Abstract: An actuator scaled to macroscopic or microscopic sizes, uses ultrasonic energy to induce motion of an object in a desired direction. The actuator includes one or more pair of piezoelectric transducers connected with a transducer tip. Supplying the piezoelectric transducers with alternating current electrical power causes the tip to vibrate at ultrasonic frequencies. Urging the vibrating tip into contact with a surface on the object at a selected angle of inclination induces the object to move in the desired direction at a rate determined by the inclination angle. Multiple actuators can be used to induce a fall range of movements of variously shaped objects. In microscopic form, the actuator can be used to create a MEMS device. The optional application of a compliant material either on the transducer tip or on the object's surface enhances the movement induced by the actuator.

Abstract: An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400° C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

Abstract: A method for preparing a copper pad surface for electrical connection that has superior diffusion barrier and adhesion properties is provided. In the method, a copper pad surface is first provided that has been cleaned by an acid solution, a protection layer of a phosphorus or boron-containing metal alloy is then deposited on the copper pad surface, and then an adhesion layer of a noble metal is deposited on top of the protection layer. The protection layer may be a single layer, or two or more layers intimately joined together formed of a phosphorus or boron-containing metal alloy such as Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B and Ni-W-B to a thickness between about 1,000 Å and about 10,000 Å. The adhesion layer can be formed of a noble metal such as Au, Pt, Pd and Ag to a thickness between about 500 Å and about 4,000 Å.

Abstract: A soft metal conductor for use in a semiconductor device which has an uppermost layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent polishing step. The invention also provides a method for making a soft metal conductor that has a substantially scratch-free surface upon polishing by a multi-step deposition process, i.e., first sputtering at a higher temperature and then sputtering at a lower temperature and followed by another high temperature sputtering process. The invention further discloses a method for forming a substantially scratch-free surface on a soft metal conductor by first depositing a soft metal layer at a low deposition temperature and then annealing the soft metal layer at a higher temperature to increase the grain size of the metal.

Abstract: A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

Abstract: A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free surface upon polishing in a subsequent chemical mechanical polishing step.

Abstract: A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

Abstract: A method for joining a multiplicity of multi-alloy solder columns to an electronic substrate and the structure formed by such method are disclosed. In the method, a mold plate equipped with a multiplicity of cavities is first filled by an injection molded solder technique with a high temperature solder forming a multiplicity of solder columns. The mold plate is then sandwiched between an extraction plate and a transfer plate by utilizing a multiplicity of displacement means equipped in the extraction plate to displace the multiplicity of solder columns from the mold plate into a multiplicity of apertures equipped in the transfer plate. The multiplicity of cavities in the transfer plate each has a straight opening and a flared opening. The flared opening is then filled with a low temperature solder paste to encapsulate one end of the high temperature solder column.

Abstract: A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistance is improved is disclosed. In the method, the copper composition can be deposited by a variety of techniques such as electroplating, physical vapor deposition and chemical vapor deposition. The impurities which can be implanted include those of C, O, Cl, S and N at a suitable concentration range between about 0.01 ppm by weight and about 1000 ppm by weight. The impurities can be added by three different methods. In the first method, a copper seed layer is first deposited into a receptacle and an ion implantation process is carried out on the seed layer, which is followed by electroplating copper into the receptacle.