Abstract: An SOI FET comprising a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region is disclosed. The doped region has a dielectric constant different from the dielectric constant of the doped regions. A body also in the silicon layer separates the source/drains in the silicon layer. The source/drains are aligned over the doped regions and the body is aligned over the undoped region. A gate dielectric is on top of the body and a gate conductor is on top of the gate dielectric.

Abstract: An SCSI circuit which allows for the independent control of driver slew rate and amplitude with a linear shaped driver output voltage. The circuit comprises 1) a symmetrical H-Driver having at least four predrive controls; and 2) a predrive control circuit coupled to one of the predrive controls for independently varying the amplitude and rise time. The SCSI circuit is designed to utilize minimal space on the IO circuit pad, thereby conserving the amount of space allotted by the silicon area on the integrated circuit chip.

Abstract: A method for enhancing power bus for I/O libraries in ASIC designs is disclosed. An I/O assignment for I/O circuits to be utilized in an ASIC design is initially generated. Each I/O circuit may obtain power from either a primary I/O power bus or a secondary I/O power bus. A determination is then made as to whether or not the I/O assignment meets certain predetermined power distribution requirements. In a determination that the I/O assignment does not meet the predetermined power bus distribution requirements, a power enhancement cell is added. The power enhancement circuit includes at least one metal line for connecting the primary I/O power bus to the secondary I/O power bus in order for the I/O assignment to meet the power bus distribution requirements.

Abstract: A method and apparatus that converts integer numbers to/from floating point representations while loading/storing the data. The method and apparatus perform this conversion within a central processing unit having a converter unit and a set of conversion registers. The load/store instructions having data requiring conversion include an index field for identifying one of the conversion registers. Each one of the conversion registers includes information on the type of conversion required and any scaling factors to be applied. Upon receiving one of these instructions, the converter uses the identified conversion register to perform the conversion and stores the converted data into the corresponding register or memory location.

Abstract: A method of analyzing I/O cell layouts for integrated circuits, such as ASICs, includes defining a proposed I/O cell layout on a selected chip image, providing a set of limit rules for electromigration, IR voltage drop and di/dt noise for the selected chip image, providing characteristics for each I/O cell type used in the proposed I/O cell layout, checking the proposed I/O cell layout by applying the limit rules to the proposed I/O cell layout and reporting all I/O cells used in the proposed I/O cell layout that do not meet the limit rules for the selected chip image.

Abstract: A circuit includes a resistance-capacitance (RC) structure connected to a first set of transistors and a second set of transistors that perform the same logical function as the first set of transistors. The first set of transistors have thinner gate oxides than the second set of transistors. The RC structure drains an electric field from the first set of transistors, such that the first set of transistors are on only during initial transistor switching. In other words, the RC structure turns off the first set of transistors after transistor switching is completed. Also, the first set of transistors and the second set of transistors share common inputs and outputs. The first set of transistors exhibit higher tunneling currents than the second set of transistors. The thinner gate oxides of the first set of transistors cause the first set of transistors to exhibit higher device currents than the second set of transistors.

Abstract: A method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox allows a reduction in the number of fuses required to repair or customize an integrated circuit and allows fuses to be grouped outside of the macros repaired by the fuses. The remote location of fuses allows flexibility in the placement of macros having redundant repair capability, as well as a preferable grouping of fuses for both programming convenience and circuit layout facilitation. The fuses are arranged in rows and columns and represent control words and run-length compressed data to provide a greater quantity of repair points per fuse. The data can be loaded serially into shift registers and shifted to the macro locations to control the selection of redundant circuits to repair integrated circuits having defects or to customize logic.

Abstract: An apparatus for assisting backside focused ion beam (FIB) device modification is disclosed. The apparatus for assisting backside FIB device modification includes an FIB device modification circuit and a control circuit. The FIB device modification circuit includes an input, an output, an FIB input pad, and an FIB output pad. The FIB device modification circuit allows the input to be electrically connected to the output. The control circuit, which is coupled to the FIB device modification circuit, may include a jumper and a cut. The control circuit is preferably located in a proximity of a backside of a substrate to allow the jumper and the cut to be modified by an FIB machine.

Abstract: A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.

Abstract: A boundary scan cell includes a shift latch, an update latch and a flushable latch that each have at least a respective data input and at least a respective data output. The data output of the shift latch is coupled to the data input of the update latch. The boundary scan cell further includes control circuitry that controls operation of the flushable latch circuit. The control circuitry selects, as input data for the flushable latch, one of a functional logic signal and a boundary scan signal in response to a mode signal. If the mode signal indicates a test mode, the control circuitry selects the boundary scan signal as the input data and causes the flushable latch to flush through the input data to the data output of the flushable latch independent of a system clock signal. The boundary scan cell can be implemented as either an input or output cell and preferably is compliant with IEEE Std 1149.1.

Abstract: A complementary metal oxide semiconductor PLL includes an input for receiving a reference frequency and a feedback loop for determining a phase error based on the reference frequency. The feedback loop includes a calibration DAC (amplifier with a digital gain control input) and a bandwidth DAC in series. The ICO controller is well known in control theory as a PI or proportional-integral controller. A proportional path supplies a proportional signal to the calibration amplifier and an integral path supplies an integral signal (a signal that is integrated in time) to the calibration amplifier.

Abstract: An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, the SiGe device is connected in series with a circuit element for protection of the circuit element. Advantageously, the device may be exploited as a buffer element providing ESD circuit protection for receiver devices, power supply clamp circuits and I/O driver circuits.

Abstract: An ESD clamping circuit arranged in a darlington configuration and constructed from SiGe or similar type material. The ESD clamping circuit includes additional level shifting circuitry in series with either the trigger or clamping device or both, thus allowing non-native voltages that exceed the BVCEO of the trigger and/or clamp devices.

Abstract: The present invention provides a receiver device having multiple voltage supplies that allows the output stage of the receiver device to go to a safe state whenever its voltage is disconnected or powered-down, independent of any of its normal control circuits. Furthermore, the isolation of the multiple voltage supplies provides a low skew at the output of the receiver device.

Abstract: A device with an optically controlled VT is disclosed. The device includes a semiconductor die which includes an FET, the FET having a gate on an upper surface of a substrate, a body under the gate and a source contacting the body forming a body-to-source junction. A light source is provided for exposing the body to light from the lower surface of the substrate.

Abstract: An impedance controller comprises impedance control logic outputting an adjustable impedance and a comparator comparing the adjustable impedance with a reference voltage. The impedance control logic recalibrates said adjustable impedance only when said comparator indicates a change in impedance.

Abstract: A multi-threshold flip-flop circuit having an outside feedback is disclosed. The multi-threshold flip-flop circuit comprises a master latch and a slave latch. Coupled between an output of the slave latch and an input of the master latch, a switchable feedback path is utilized to retain logical values of the slave latch during a sleep mode of the flip-flop circuit.

Abstract: A semiconductor device comprising: a global power bus having a first portion for supplying power to a first set of circuits and a second portion for supplying power to a second set of circuits; a local power bus for supplying alternative power to the second set of circuits; and wherein the total of the width of the second portion of the global power bus and of the width of the local power bus does not exceed the width of the first portion of the global power bus.

Abstract: The present invention provides an improved method and apparatus for independently controlling phase and frequency using an oscillator having a plurality of stages in combination with a phase selector within a digitally controlled phase-locked loop, preferably, a read phase locked loop. The present invention provides a digitally controlled variable phase of the read timing loop in read channel integrated circuits associated with data storage devices. The phase selector has a digitally controlled fine interpolator with 12 states for further fine interpolation between at least two multiplexer phase outputs to provide a single phase output selected from a range comprising at least 2&pgr; in selectable variable phase increments of 2&pgr;/96 radian. The combined oscillator with the phase selector within a phase locked loop controls phase by exact fractional increments of equally space phases of the operating frequency within the phase locked loop, therein controlling phase at all operating frequencies.

Abstract: A device and method are provided for indicating a status of sixty-six input signals. The device may include a plurality of pre-sum circuits that receive the sixty-six input signals. Each pre-sum circuit may output two pre-sum output signals. The device may also include a plurality of first stage circuits. Each first stage circuit may receive two pre-sum output signals and output two first stage output signals. The device may also include a plurality of second stage circuits adapted to receive the first stage output signals. Each of the second stage circuits may output second stage output signals. A final stage circuit may be adapted to receive the second stage output signals and output two final stage output signals. The two final stage output signals represents the status of the sixty-six input signals such as whether at least three of the input lines have failed.