Abstract: The present invention is directed to a process for device or mask fabrication. In the process, an energy sensitive resist material that is the combination of a matrix polymer and a modifier polymer is formed onto a substrate. The modifier polymer and matrix polymer are phase compatible. In this regard the modifier polymer has a weight average molecular weight of about 5,000 to about 500,000 g/mol, and at least some of the polymer chains are terminated by a halogen moiety. The resist material is patternwise exposed to radiation, thereby introducing a latent image of the pattern into the resist material. The energy depolymerizes the modifier polymer. The modifier polymer is substantially less soluble in a developer solution used to develop the pattern introduced into the resist than is the matrix polymer. Therefore, if the resist material is positive acting, the resist material that is exposed to radiation is substantially more soluble in developer solution than the unexposed resist material.

Abstract: A lead frame comprising an ultra-thin composite of noble metal layers on a nickel surface is disclosed. The composite ranges from 2.5 to 11 microinches in thickness and includes in succession from nickel, a 0.5 to 3.5 microinches of palladium or gold strike, a 0.5 to 5 microinches thick palladium-nickel alloy layer having 10 to 90 weight percent nickel by weight of the alloy, a 0.5 to 5 microinches thick palladium layer, and a 0 to 1 microinch thick gold layer. The gold layer is being used whenever it is desirable to achieve high speed of solder wetting, relative to the speed of solder wetting of palladium. Viable ultra-thin coatings are most effectively obtained by deposition of the layers in a reel-to-reel metal deposition process.

Abstract: An apparatus and process in which a particle beam is used to introduce a pattern into an energy sensitive material is disclosed. A coil assembly is used to selectively control both the orientation of the particle beam relative to the substrate on which the energy sensitive material is applied and the magnification or demagnification of the image in the particle beam. The coil assembly comprises at least two coils. The particle beam is projected through the coil assembly. The coil assembly is used to rotate the particle beam to compensate for an observed difference between the actual substrate orientation and the desired substrate orientation. The coils in the coil assembly are excited so that the desired rotation is introduced into the particle beam by the cumulative effects of the magnetic fields generated by the excited coils in the coil assembly.

Abstract: The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate.

Abstract: The present invention is directed to energy-sensitive resist materials and to a process for device fabrication in which energy-sensitive resist materials are used. The energy-sensitive resist materials contain a polymer wherein at least 10 mole percent of the repeating units that make up the polymer have a sulfonamide moiety. The aqueous base solubility of the sulfonamide moiety provides the polymer with desirable properties. The energy sensitive resist materials also contain a compound that generates acid when exposed to radiation.In the process of the present invention, a film of the energy-sensitive material is formed on a substrate. The film is exposed to delineating radiation. The pattern is developed by a post-exposure bake step followed by application of an aqueous base developer solution.

Abstract: The present invention is predicated upon the fact that a process signature from a plasma process used in fabricating integrated circuits contains information about phenomena which cause variations in the fabrication process such as age of the plasma reactor, densities of the wafers exposed to the plasma, chemistry of the plasma, and concentration of the remaining material. In accordance with the present invention, a method for using neural networks to determine plasma etch end-point times in an integrated circuit fabrication process is disclosed. The end-point time is based on in-situ monitoring of at least two parameters during the plasma etch process. After the neural network is trained to associate a certain condition or set of conditions with the endpoint of the process, the neural network is used to control the process.

Abstract: A class of silicon-containing materials display excellent sensitively in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.

Abstract: The present invention provides methods and apparatus for analyzing the particulate contents of a sample such that a high proportion of the sample particles are analyzed without discrimination against high electronegativity and high ionization potential elements. In an exemplary embodiment, the invention comprises an apparatus for analyzing the particulate content of a sample having particulate diameters in range of 0.001-10 microns. The apparatus comprises an evacuable chamber equipped with a chamber entrance through which a particle-laden gas stream enters. An inlet device, such as a capillary, communicates with the chamber entrance for inputting the particle-laden gas stream to the evacuable chamber. A laser is positioned to produce a focused laser beam which intersects the particle-laden gas stream at a position approximately 0.1 mm from the chamber entrance. The laser beam has a power density sufficient to fragment and ionize particles entrained within the particle-laden gas stream.

Abstract: The present invention provides an acoustic cell for determining the composition of gas mixtures. The acoustic gas composition analysis cell has transducers isolated from the cell body by a metal housing. A sound-absorbing sleeve around the body of the transducer increases the signal-to-noise ratio to at least 4:1. Additionally, the transducers employed in the acoustic cell operate in the kilohertz range, reducing attenuation in the gas mixture being analyzed. The cell body employs vacuum seals which permit the use of the cell in line with vacuum equipment.

Abstract: In an apparatus and process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first probe, collecting radiation propagating away from the wafer and radiation from the lamps in a second probe, and detecting radiation collected in the respective probes. This procedure further involves deconvolving the multiphase ac component of the signal received from each probe, determining the linear functional relationship of the first probe signal as a function of the second probe signal resulting from time-variations of the energizing current, and using this linear functional relationship along with the signal data according to a mathematical expression to infer the temperature.

Abstract: Multilayer circuit devices include a plurality of metallized patterns thereon, said patterns being separated by a polymeric dielectric film. The various metallized patterns are interconnected by means of microvias through the polymeric film or films. Each of the metallizations is a composite including in succession from the substrate or from the polymeric film, a layer of titanium (Ti), a layer of titanium and palladium alloy (Ti/Pd), a layer of copper (Cu), and a layer of titanium and palladium alloy (Ti/Pd). The Ti-Ti/Pd-Cu-Ti/Pd composite is hereinafter referred to as TCT. The adhesion between the polymeric film and the top Ti/Pd layer is better than that between the polymer and gold (Au) and comparable to that between the polymer and an adhesion promoted Au layer. Use of the TCT metallization also results in additional cost reduction due to the elimination of Ni and Au layers on top of the Cu layer.

Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low and uniform stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited. The stress gradients in the film are further reduced by transferring heat from the membrane as the metal is deposited thereon.

Abstract: An integrated circuit device with a light-emitting diode thereon is disclosed. The device has discrete regions which function in concert to emit light when a suitable amount of voltage is provided. The device has four discrete regions: a first doped silicon region; a second silicon dioxide region; a third organic material region; and a fourth conducting material region. The first and fourth regions are electrodes which inject holes and electrons into the conducting organic material. The second region lowers the energy barrier between the first and third regions which improves the efficiency with which the polymer emits light. The diode of the present invention is fabricated on an integrated circuit using conventional integrated circuit fabrication techniques.

Abstract: Applicants have discovered an improved photodefined dielectric materials comprising poly(aromatic diacetylenes). The preferred poly(aromatic diacetylenes) are copolymers of aromatic diacetylenes. Specific examples are 1) a copolymer of 4,4'-diethynyldiphenyl ether and m-diethynyl benzene and 2) a copolymer of 4,4'-diethynyldiphenyl ether and 4,4'-bis(3-ethynylphenoxy)-2,2',3,3',5,5',6,6'-octafluorobiphenyl. These copolymers can be photochemically crosslinked in patterns with exposure of 30 mJ/cm.sup.2 .mu.m and 60 mJ/cm.sup.2 .mu.m, respectively, and patterns have been produced in 10 .mu.m thick films with features as small as 12 .mu.m.

Abstract: A method and apparatus for cleaning substrates in a process for device fabrication is disclosed. An aqueous solution of hydrogen peroxide and ammonium hydroxide is used to clean the substrates. The concentration of hydrogen peroxide and ammonium hydroxide in the cleaning solution is maintained at a certain level. The life of the cleaning solution is extended by the process. By maintaining the concentrations of the hydrogen peroxide and ammonium hydroxide in the solution within a desired range, the process also provides a cleaning solution that effectively cleans the substates throughout the entire time the solution is used to clean the substrates. The apparatus monitors certain solution parameters such as the pH and the conductivity of the cleaning solution and adds hydrogen peroxide and/or ammonium hydroxide to the cleaning solution to maintain the parameters, and thus the concentration of hydrogen peroxide and ammonium hydroxide, at desired levels.

Abstract: The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

Abstract: Metals useful in the formation of hydrides for applications such as batteries are advantageously activated by hydriding/dehydriding process. This process involves repeatedly stepping the potential of metal/metal hydride electrodes in electrochemical cells. The process activates hydrogen-storing materials that are difficult to activate by conventional means.

Abstract: A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of doped host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.

Abstract: Applicants have discovered an improved photodefined dielectric materials comprising poly(aromatic diacetylenes). The preferred poly(aromatic diacetylenes) are copolymers of aromatic diacetylenes. Specific examples are 1) a copolymer of 4,4'-diethynyldiphenyl ether and m-diethynyl benzene and 2) a copolymer of 4,4'-diethynyldiphenyl ether and 4,4'-bis(3-ethynylphenoxy)-2,2',3,3',5,5',6,6'-octaflurorbiphenyl. These copolymers can be photochemically crosslinked in patterns with exposure of 30 mJ/cm.sup.2 .mu.m and 60 mJ/cm.sup.2 .mu.m, respectively, and patterns have been produced in 10 .mu.m thick films with features as small as 12 .mu.m.

Abstract: A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.