Abstract: A lithographic process for device fabrication is disclosed in which a hydrogen fluoride vapor is used to develop a pattern from an image introduced into an energy sensitive resist material. A class of silicon-containing materials display excellent sensitivity in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. When these materials are patternwise exposed to radiation in the presence of oxygen, the oxygen content of the unexposed region is significantly different from the oxygen content in the exposed region. The pattern is developed using HF because the higher oxygen content material is etched at a faster rate by HF than the lower oxygen content material. Materials are deposited from the vapor phase and show excellent promise for use as resists in the fabrication of electronic and optical devices.

Abstract: A method for programming and/or erasing an array of stacked gate memory devices such as EPROM and EEPROM devices in a NOR array is disclosed. In the method, either a program verify or an erase verify is performed intermittently with the programming of a device or the erasure of the array. During the program-verify, one of either a negative V.sub.CS is applied to the deselected devices in the array, a negative V.sub.BS is applied to both the selected and deselected devices in the array, or both conditions are applied. Performing the program verify or erase verify in this manner is efficient and accurate. During the programming step, it is also advantageous if one of either a negative V.sub.CS is applied to the deselected devices in the array, a negative V.sub.BS is applied to the selected devices in the array, or both. With the application of a negative V.sub.

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material.

Abstract: The present invention provides methods and apparatus for analyzing the particulate contents of a sample such that a high proportion of the sample particles are analyzed without discrimination against high electronegativity and high ionization potential elements. In an exemplary embodiment, the invention comprises an apparatus for analyzing the particulate content of a sample having particulate diameters in the range of 0.001-10 microns. The apparatus comprises an evacuable chamber equipped with a chamber entrance through which a particle-laden gas stream enters. An inlet device, such as a capillary, communicates with the chamber entrance for inputting the particle-laden gas stream to the evacuable chamber. A laser is positioned to produce a focused laser beam which intersect the particle-laden gas stream at position approximately 0.1 mm from the chamber entrance. The laser beam has a power density sufficient to fragment and ionize particles entrained within the particle-laden gas stream.

Abstract: The present invention is directed to a process for forming composite films. The films are formed on a substrate by directing a gas containing reactant species onto the substrate. The composite film is formed from an interaction between two reactant species. At least a portion of the substrate remains within the purview of the plasma discharge while the composite film is formed on the substrate.

Abstract: Thin film transistors in which the active layer is an ordered film of a pthalocyanine coordination compound with a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity in the range of about 10.sup.-9 S/cm to about 10.sup.-7 S/cm at 20.degree. C. are disclosed. Examples of suitable pthalocyanines include copper pthalocyanine, zinc pthalocyanine, hydrogen pthalocyanine, and tin pthalocyanine. Thin film devices made of these materials have an on/off ratio of at least about 10.sup.4. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30.degree. C. to about 200.degree. C. when the film is formed thereon.

Abstract: A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process a layer of material that has a crystal lattice similar to the crystal lattices of the first substrate is formed on the surface of the second substrate. The thickness of the layer is about 1 nm to about 2 nm. The layer of material is then bound to the surface of the first substrate.

Abstract: A process for device fabrication is disclosed. In the process, an energy sensitive material is formed on a substrate. The energy sensitive resist material contains a polymer or a polymer blend in combination with an energy-sensitive material such as a photoacid generator. At least three substituents are distributed on the polymer blend. The first of these substituents is a hydroxyl (OH) group. The second of these substituents is an acid-sensitive or acid labile group which is cleaved in the presence of acid and replaced by an OH group. The third of these substituents forms hydrogen bonds with the first group. The ratio of the number of OH substituents relative to the number of substituents that hydrogen bond to the OH substituents (mole percent) is about 40:1 to at least about 1:1. The relative amounts of the first and third substituents is selected to provide a resist material with a glass transition temperature of at least about 60.degree..

Abstract: The present invention is a process for protecting articles from electrostatic discharge (ESD) in which a coating is applied directly onto the article in liquid form and the resulting coating provides a surface resistivity that protects the underlying article from ESD. The composition contains a carrier material, carbon black, and a transition metal. The composition forms a coating on an article when applied as a liquid and dried thereon. The ratio of carrier solids to carbon black is about 100 parts by weight polymer to about 0.5 to about 3 parts by weight carbon black. The ratio of carrier solids to transition metal is about 100 parts by weight about 6 to about 15 parts by weight transition metal.

Abstract: Patterning of a layer of material that can be etched with gaseous mixture of oxygen, chlorine, and nitrogen as etchant species, such as a chromium or a chromium-containing compound layer, is accomplished by using a patterned organometallic resist, such as a polymer which contains silicon or germanium. Although gaseous mixtures of chlorine and oxygen etch chromium anisotropically. Some undercut of the chromium is still observed. This undercut is controlled or eliminated by adding nitrogen to the gas mixture. Layers of material that have been patterned in this way can then be used for photolithographic masks or reticles, for X-ray masks, for e-beam masks. or for direct patterning of other, underlying layers in semiconductor integrated circuits or other devices.

Abstract: Thin film transistors in which the active layer is a film of an organic semiconductor with a structure having two or three six-membered, fused aromatic rings with two five-membered, heterocyclic aromatic rings fused thereto. The five-membered rings are either substituted or unsubstituted. If substituted, the substituents are either alkyl or alkoxyalkyl with about two to about 18 carbon atoms. The organic semiconductor compound has a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. Thin film devices made of these materials have an on/off ratio of at least about 100.

Abstract: A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, Ta.sub.2 O.sub.5 or V.sub.2 O.sub.5) and the metal dopant is a Group IV material (Zr, Si, Ti, and Hf). The metal oxide contains about 0.1 weight percent to about 30 weight percent of the dopant. The doped, metal oxide dielectric of the present invention is used in a number of different electronic components and devices. For example, the doped, metal oxide dielectric is used as the gate dielectric for MOS devices. The doped, metal oxide dielectric is also used as the inter-poly dielectric material for flash memory devices.

Abstract: The present invention is directed to a lead frame in which the metal lead frame substrate is copper, copper alloy, or nickel alloy. The lead frame substrate is coated with a conformable nickel coating that is crack-resistant when the lead frame is bent to an angle of at least 82 degrees with a bend radius of about 150 .mu.m to about 300 .mu.m. Bending the lead frame in this manner causes surface deformations in the lead frame substrate. Cracks do not appear through the thickness of the conformable nickel coating of the present invention when the depth of the deformations that result from this bending do not exceed about 5 .mu.m.

Abstract: A novel PDLC film composition that contains a mixture of acrylate monomers that provide certain advantages when combined with a liquid crystal. The mixture of acrylate monomers contains one monofunctional monomer that gives rise to a homeotropic anchoring condition, and one monofunctional monomer that gives rise to homogeneous anchoring condition in the PDLC film made from the composition of the present invention at a selected temperature. The monomer mixture also contains a polyfunctional acrylate monomer. PDLC films made from these compositions have advantages over films made from compositions that have only one monofunctional acrylate monomer. Also, by using the process of the present invention, one can prepare a PDLC film that exhibits a low switching voltage in a desired temperature range.

Abstract: A class of blue emitting materials, that, when placed in EL devices with an emitter layer and a hole transporter layer, provide EL devices that emit white light. The blue-emitting material has a non-polymeric molecular structure that comprises a five or six-membered heterocyclic moiety selected from the groups consisting of oxazole, imidazole, quinoline and pyrazine with at least three substituents pendant thereto. The blue-emitting materials of the present invention have certain characteristics that allow them to be formed into films with advantageous properties. The films formed from these materials are amorphous (i.e they have a crystal size less than about 1000 .ANG.). The thickness of the films of the blue-emitting material is less than 600 .ANG. in the devices of the present invention.

Abstract: A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 therein. Afterward, the substrate is further oxidized in an oxygen containing atmosphere for a period of time sufficient to form a silicon oxynitride layer on the substrate with a thickness of at least about 1 nm and a nitrogen content of at least about 5.times.10.sup.13 atoms/cm.sup.2 on the wafer.

Abstract: A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.

Abstract: A system for analyzing a sample is disclosed. The system includes a light-transmitting probe with a light emitting tip having a diameter that is less than one-wavelength of light. The system is adapted to place the probe in close proximity to the sample without physically contacting the sample with the probe, and to move the sample relative to the probe such that light transmitted from the probe is directed onto the desired portion of the sample surface. The system further include a light source which transmits light into the probe tip. The system also includes a detector which detects a portion of the light transmitted through the sample. The detector is configured to detect that portion of the light that was incident on the sample surface at an angle greater than the critical angle. The detector is equipped with an aperture through which passes substantially all of the light that was incident on the surface at an angle less than the critical angle and which was transmitted through the sample.

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation.

Abstract: The present invention is directed to a process for device fabrication in which a pattern is transferred from a photoresist mask into an underlying layer of silicon dioxide. A plasma containing a fluorocarbon gas is used to etch the pattern into the underlying silicon dioxide layer. The plasma is monitored using optical emission spectroscopy to effect control of the etch process. The optical emission is monitored at select wavelengths. To control the process based on an observation of photoresist etch rate, two wavelengths are monitored. One is associated with a species that is produced by the interaction between the photoresist and the plasma, and one is associated with a species related to the plasma intensity.