Abstract: A stimulative perfume composition which demonstrates an excellent stimulative effect uses an anisaldehyde as the stimulative agent. The stimulative perfume composition includes an effective amount of the anisaldehyde in perfume ingredients.

Abstract: A metallic vapor deposition lens provided with a protection coat is provided, the surface of which lens is finished smooth and good at abrasion-proof characteristic. The metallic vapor deposition lens of the invention is characterized in that a filmy layer 2 made from a metallic material m is formed on at least one side surface of a lens proper 1 by vapor deposition and a polymerized and hardening layer 3 made from diethylene glycol bis(allyl carbonate) is overlaid on said metallic deposition filmy layer 2 so as to protect the surface of said filmy layer 2.

Abstract: A heating apparatus 20 comprises a container 2 having a work housing space 1 formed therein, and a heat source 3 for heating a work W in the work housing space 1. The apparatus further comprises a heat ray reflecting member 10 having a heat reflecting surface 10a thereof composed of a heat ray reflecting material, so as to allow the heat ray generated in the work housing space 1 to reflect on the heat reflecting surface 10a to thereby change the direction thereof towards the works W. The heat reflecting material is provided for reflecting heat ray in a specific wavelength band, comprises a stack of a plurality of element reflecting layers comprising materials having transparent properties to the heat ray, in which in the element reflecting layers, two adjacent layers are composed of a combination of materials differed from each other in refractive indices to the heat ray, while keeping difference between the refractive indices of 1.1 or larger.

Abstract: It is an object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate having a relatively low dopant concentration, as large as 300 mm or more in diameter but also a vapor phase growth apparatus by means of which such a semiconductor wafer can be produced. A dopant gas is supplied into a reaction chamber 10 through all of the inlet ports 18a to 18f disposed in a width direction of the reaction chamber 10 from a common gas pipe 22a functioning as a main dopant gas pipe. Further, the dopant gas is additionally supplied through inner inlet ports 18a and 18b, and middle inlet ports 18c and 18d, as specific gas inlet ports, into the reaction chamber 10 from first and second auxiliary dopant gas pipes 22b and 22c.

Abstract: An escape device for allowing a person to escape from a high position to a predetermined landing point. The escape device basically includes: an elastic cord element elastically stretchable to a maximum length substantially at the landing point; a container element provided at the high position; and a carrier element connected with the elastic cord element. Accordingly, a person can descend via the carrier element from the high position and softly land on the landing point. A plurality of carrier elements may be provided and connected together via plural elastic cord elements and auxiliary ropes, using disengagement mechanism, to provide a multistage escape device, so that the carrier elements can be disengaged from one another in sequence when they are falling so as to permit person(s) to descend and softly land on a ground at the landing point.

Abstract: A system for order-receiving and delivery of a packaging medium adapted to package an article, which includes whole ordering and delivery processes concerning the packaging medium. This system allows a client to effect a data receiving and transmission with a designer and obtain an individual ID from the designer so that a basic data is transmitted from the client to a terminal server owned by the designer. In the system, the designer has an arithmetic unit by which the basic data is converted into a design data, and the client can take one or more actions to check to see if such design data complies with conditions and requirements proposed by the client, or not. After that checking, the design data is transmitted to a manufacturer who then manufactures packaging medium according to the design data and delivers resulting packaging medium to the client.

Abstract: The present invention relates to the rimless spectacles with lens holding stability, the jointing condition between the respective lenses and the parts to be engaged thereto of which spectacles is very stable and which shape stability lasts for a long period of time. Such rimless spectacles is provided as not only being stable in the jointing condition between the respective lenses and the parts to be engaged thereto so as to keep its shape intact for a long period of time and simplifying the number of the assembly parts so as to be advantageous for the parts inventory control as well as the maintenance thereof, but also improving the production efficiency thereof.

Abstract: An ion generating apparatus 1 has an electric cleaning mechanism 79 for burning out attachment adhered on an ion generating electrode 7 by electric heating. Adhesion of dirt and the like onto the end portion of the electrode where an electron generation field concentrates will considerably ruin the ion generation efficiency. So that burning out of attachment adhered onto the end portion 7a of the ion generating electrode 7 using the electric cleaning mechanism 79 is extremely effective in terms of avoiding such nonconformity. Object of the cleaning will be attained to a sufficient degree if only the dirt adhered onto the sharpened end portion of the electrode 7, which is responsible for the ion generation, is selectively removed, which is also advantageous in simplifying the apparatus since there is no need to excessively raise the electric heating capacity of the electric cleaning mechanism 79.

Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.

Abstract: A polarized lens of plastic lamination is provided, which lens is of high quality and highly durable in use while being inexpensively and stably producible without inconsistency in quality. The issues of the prior polarized plastic lens as produced by the blanking and hot machining method, the injection mold-heat bonding method or the sandwiching method are solved by making the most of the ductility and casting performance inherent in diethylene glycol bis(allyl carbonate) and combining therewith the optical characteristics of a polarized film made of poly(vinyl alcohol) resin as well as transparency and durability inherent in a polycarbonate resin plate so as to produce a polarized lens of plastic lamination.

Abstract: A silicon oxide film 3′, 3″ is formed on each of the main surfaces of a first silicon single crystal substrate 1 (bond wafer) and a second silicon single crystal substrate 2 (base wafer), and the first and second silicon single crystal substrates are then brought into close contact so as to locate the silicon oxide films 3′, 3″ in between in an atmosphere of a clean air supplied through a boron-releasable filter, to thereby produce an SOI wafer 10. The second silicon single crystal substrate 2 employed herein comprises a silicon single crystal substrate having a bulk resistivity of 100 &OHgr;·cm or above. In thus produced SOI wafer 10, the silicon oxide film 3 has a depth profile of boron concentration in which the boron concentration reaches maximum at a thickness-wise position. This ensures manufacturing of SOI wafer excellent in high-frequency characteristics.

Abstract: A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element 1 has a p-n junction interface responsible for light emission formed between a p-type GaAs1-aPa layer 9 and an n-type GaAs1-aPa layer 8, and has a nitrogen-doped zone 8c formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8. Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone 8c while keeping a mixed crystal ratio a of the p-type GaAs1- aPa layer 9 and n-type GaAs1-aPa layer 8 constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone 8c so as to fall within a range from 1.05Yp to 1.

Abstract: In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer.

Abstract: A phase shift fringe image analysis method comprises the steps of shifting an object to be observed and a reference relative to each other by using a phase shift device, obtaining fringe image data at three or more phase shift positions having a given phase gap therebetween, and determining a phase of the object by analyzing thus obtained plurality of fringe image data items. The positional data of at least three phase positions are specified, and the whole or part of the fringe image data on which carrier fringes at these phase positions are superposed is subjected to a predetermined arithmetic operation so as to carry out a phase analysis and determine the phase of the object.

Abstract: A compact, inexpensive single-focus lens in a three-element configuration comprises, successively from an object side, a first lens with a low power having at least one aspheric surface, a second lens with a positive refracting power having a convex form on an image surface side, and a third lens with a low power having at least one aspheric surface.

Abstract: A projection type display apparatus decomposes white light emitted from a light source into color light components, combines the color light components after image modulation, and projects a desirable image onto a screen by using a projection lens. A lens element constituting a part of the projection lens is disposed upstream a color light combining device for combining the color light components.

Abstract: An optical device has a light-transmitting optical substrate formed with a multilayer film and a barrier layer disposed on the multilayer film side thereof. The light-transmitting optical substrate has a refractive index Ns (at a reference wavelength of 632.8 nm) falling within the range of 1.7≦Ns≦1.9, whereas the barrier layer has a refractive index Nb (at a reference wavelength of 632.8 nm) falling within the range of −0.1≦Nb−Ns≦0.1.

Abstract: In a fringe analysis method comprising the step of subjecting fringe image data carrying wavefront information of an object to be observed to Fourier transform method so as to determine a wavefront of the object, the fringe image data is multiplied by a window function corresponding to an effective data area of the fringe image data before the Fourier transform method is applied to.

Abstract: An electronic endoscope equipped with an electronic zoom IC circuit that optically scales an object under observation using power scaling lenses and performs electronic power scaling processing on an image obtained by a CCD, wherein the electronic endoscope sets a predetermined depth of field by driving the power scaling lenses with the image optically magnified based on an operation of a variable depth switch and maintains the magnification immediately before this switch operation through electronic power scaling processing. This makes it possible to change a depth of field and observe an image magnified under an equal magnification focused in the depth direction on the monitor. The electronic endoscope can also form a plurality of still images of different depths of field based on an operation of the freeze switch and record optimal still images.

Abstract: A support apparatus for an optical wave interferometer reference plate comprises a support member for supporting an outer peripheral face of the reference plate. The support member is bonded to the outer peripheral face of the reference plate at a plurality of positions spaced from each other along the circumferential direction of the outer peripheral face and adapted to deform elastically in a circumferential/diametric direction of the reference plate but less in the optical axis direction of the reference plate than in the circumferential/diametric direction.