Abstract: An acceleration resistant crystal resonator is made from a single quartz te that is optically twinned into a left-handed (LH) quartz portion and a right-handed (RH) quartz portion. According to the method, the optically twinned single quartz plate is formed into a resonator plate wherein the effective thickness of the (LH) portion is substantially the same as the effective thickness of the (RH) portion. The resonator plate is then mounted and bonded to the support structure of a crystal resonator enclosure. A pair of electrodes is then deposited onto the (LH) portion and a pair of electrodes deposited onto the (RH) portion. The thickness of the two pairs of electrodes is then adjusted so that the resonant frequency of the resonator on the (LH) portion is substantially the same as the resonant frequency of the resonator on the (RH) portion. The pairs of electrodes are then interconnected to each other and to an oscillator circuit so that in-phase vibration of the two portions is assured.

Abstract: Disclosed is a millimeter wave bulk effect RF power limiter consisting of a lanar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300 GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range.

Abstract: A ceramic substrate is metallized by a method including the steps of:(A) chemically cleaning the substrate,(B) sputter etching the chemically cleaned substrate,(C) sputtering a chromium layer of about 200 angstroms in thickness onto substrate,(D) sputtering a molybdenum layer of about 3500 angstroms in thickness onto the chromium layer,(E) sputtering a copper layer of about 25,000 angstroms in thickness onto the molybdenum layer,(F) firing the coated substrate in dry hydrogen at about 1000.degree. C. for about 10 minutes,(G) plating a copper-silver brazing alloy of about 0.0003 inch in thickness onto the copper layer, and(H) firing in dry hydrogen at about 700.degree. C. for about 10 minutes.

Abstract: A ceramic substrate is rapidly coated with a uniform coating of copper by ating the ceramic substrate to about 250.degree. C., adding an aqueous slurry of an inorganic copper salt to the ceramic substrate at that temperature, and heating the coated ceramic in a reducing atmosphere at about 800.degree. C.

Abstract: Boron nitride is joined to a refractory at high temperatures by coating a rface of the boron nitride with a mixture of paintable consistency of molybdenum disilicide and polyisobutyl methacrylate in an organic solvent, allowing the coated boron nitride surface to air dry, and placing the refractory in contact with the coated boron nitride surface and firing at a temperature above 1500.degree. C. in an inert atmosphere.

Abstract: An external source of electromagnetic energy is applied to quartz in addin to the conventional heating and DC bias electric field. The source can be either coherent or incoherent. The wavelengths can range from the infrared through the visible into the ultraviolet.

Abstract: A method is disclosed of delineating a desired integrated circuit pattern upon a circuit substrate. According to the method, the copolymer poly(methyl alpha-chloroacrylate-co-methacrylonitrile) is formed by emulsion polymerization techniques. The copolymer is then dissolved in a spinning solvent that will dissolve the copolymer and form a viscous solution. The solution is applied to the surface of the substrate and the substrate spinned to form a smooth, uniform resist film of about 0.3 to 1.0 micron in thickness. The resist film is heated and the region of the resist film to be patterned then exposed to ionizing radiation until exposures greater than 1.5.times.10.sup.-5 C/cm.sup.2 are obtained. The exposed regions of the resist are then developed to the substrate.

Abstract: A high rate carbon cathode is made by mixing a carbon powder having a sure area of about 1000 square meters/gram with polytetrafluoroethylene and a sufficient amount of water to form a coherent mixture. The mixture is applied to an electrically conductive screen; the cathode formed while wet to an intermediate thickness, the cathode vacuum dried at about 100 degrees C., and the cathode cold compressed to obtain a final electrode porosity of greater than 80 percent. The cathode can be used in a lithium primary cell using a solution of an inorganic lithium salt in sulfuryl chloride as the electrolyte.

Abstract: The reversible temperature coefficient of magnetization of a permanent magnet alloy over the temperature range from -50 degrees C. to +150 degrees C. is lowered by heat treating the alloy in a noble gas atmosphere or in a vacuum by the steps of(a) heating the alloy at about 1150 degrees C. for 1.5 hours (b) quenching the alloy in ice water, (c) heating the alloy at about 940 degrees C. for 2 hours, (d) lowering the temperature to about 700 degrees C. and heating for one hour, (e) lowering the temperature to about 600 degrees C. and heating for one hour, (f) lowering the temperature to about 500 degrees C. and heating for 2 hours, and (g) lowering the temperature to about 400 degrees C. and heating for 10 hours.

Abstract: At least one side of a doubly rotated quartz plate whose theta (.theta.) angle is between about 33.degree. and 36.degree. and whose phi (.phi.) angle is between about 10.degree. and 26.degree. is chemically polished by lapping the quartz plate with an abrasive and etching the lapped quartz plate in a fluoride type etchant selected from the group consisting of a 5 percent to 25 percent solution of hydrofluoric acid, a 5 percent to 50 percent solution of ammonium bifluoride, and a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio ranging from about 1:3 to 10:1, the etching being carried out until a thickness is removed from the plate that is at least twice the average abrasive particle diameter in the final lapping abrasive.

Abstract: A quartz resonator is made from a chemically polished quartz plate. The plate is placed in an enclosure fitted with at least three mounting clips to receive the plate. The plate is secured to the clips with an electrically conductive adhesive capable of withstanding operation at 350 degrees C. The assembly is cleaned and a metallic electrode deposited onto the plate until the desired frequency is reached. The enclosure is then hermetically sealed. The resulting resonator can consistently withstand extremely high shocks.

Abstract: Quartz is grown from a quartz seed material by depositing electrodes onto the seed, heating the seed to about 500 degrees C. while applying an electric field along the Z-axis of the seed of a strength of about 2 kV/cm for about 72 hours, maintaining the electric field while the seed is cooled to room temperature, removing the electrodes from the cathode surface of the seed, etching the seed, placing the seed in an autoclave and hydrothermally growing quartz.

Abstract: Single crystals of alpha aluminum phosphate of high crystal perfection are rown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics.The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C. over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C. per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.

Abstract: A high current density cathode capable of operating at current densities of A/cm.sup.2 to 30A/cm.sup.2 in the temperature range of 900 degrees C. to 1125 degrees C. is prepared by machining a porous high purity tungsten pellet containing copper in its pores and also containing about 0.6 to 2 weight percent of an activator to the desired cathode shape without reducing the pores of the emitter pellet. The pellet is then fired at 1800 degrees C. in a non-oxidizing atmosphere to remove the copper filler material. The pellet is then impregnated with Ba.sub.5 Sr(WO.sub.6)2 at a temperature of 1900 degrees C. in a dry inert gas atmosphere and the impregnated emitter then fired in dry hydrogen atmosphere at about 1840 degrees C. for about 2.5 to 5 minutes.

Abstract: Metallic coatings are vacuum deposited onto a substrate using more than one eposition method in a single vacuum deposition chamber without breaking vacuum between depositions by providing a vacuum deposition chamber with an RF sputter electrode, a chemical vapor deposition assembly spaced from the sputter electrode, and a substrate that can be rotated from beneath the RF sputter electrode to beneath the chemical vapor deposition assembly, then cleaning and degassing the substrate under vacuum in the deposition chamber, then positioning the substrate below the RF sputter electrode, backfilling the chamber with argon, and then sputter depositing a metal coating onto the substrate and then rotating the coated substrate to beneath the chemical vapor deposition assembly, vacuum pumping the chamber, delivering the material to be chemically vapor deposited to the substrate surface, and heating the substrate to the temperature required for the chemical vapor deposition reaction to take place.

Abstract: A substrate is patterned by first dissolving polymethacrylonitrile in a spinning solvent that will dissolve the polymer and form a viscous solution. The solution is then applied to the surface of the substrate and the substrate spun to form a smooth, uniform resist film of at least 3000 angstroms in thickness. The resist film is heated and the region of the resist film to be patterned is then exposed to ionizing radiation until the dissolution rate of the irradiated region of the resist film is greater than five times the dissolution rate of the unirradiated region of the resist film. The exposed regions of the resist film are then developed to the substrate in a mixture of acetonitrile or benzonitrile and toluene.

Abstract: Magnetic alloys of the general formula Sm.sub.2 Cu.sub.1.6 Zr.sub.0.16 Fe.sub.3.3 Co.sub.12-x M.sub.x are provided wherein M is Mn or Cr and wherein x is a value greater than zero and less than 2.1.

Abstract: Compounds of the general formula Sm.sub.2-x RE.sub.x Co.sub.17-y Mn.sub.y are provided wherein RE is a rare earth element selected from the group consisting of erbium, dysprosium and gadolinium wherein x has a value greater than zero and less than 0.7 and wherein y has a value less than 2.1. The compounds are suitable for use as permanent magnet material in microwave/millimeter-wave traveling wave tubes (TWT's).

Abstract: The reversible temperature coefficient of magnetization of a permanent magnet alloy is lowered by (a) heating the alloy at about 1200 degrees C. for 2 hours, (b) quenching the alloy in ice water, (c) heating the alloy at about 850 degrees C. for 2 hours, (d) lowering the temperature to about 700 degrees C. and heating for one hour, (e) lowering the temperature to about 600 degrees C. and heating for one hour, (f) lowering the temperature to about 500 degrees C. and heating for one hour, (g) lowering the temperature to about 400 degrees C. and heating for four hours, and (h) lowering the temperature to about 280 degrees C. and heating for 12 hours. The method is particularly effective in lowering the reversible temperature coefficient of magnetization of the permanent magnet alloy Sm.sub.2 Cu.sub.1.6 Zr.sub.0.16 Fe.sub.3.3 Co.sub.12.

Abstract: An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.