Patents Represented by Attorney W. J. Burke
  • Patent number: 4975764
    Abstract: The area of a BiCMOS integrated circuit is reduced by fabricating portions of the MOS transistor within the bipolar transistor. A BiCMOS integrated inverter circuit having a 35% reduction in area is disclosed.
    Type: Grant
    Filed: June 22, 1989
    Date of Patent: December 4, 1990
    Assignee: David Sarnoff Research Center, Inc.
    Inventor: Sheng T. Hsu
  • Patent number: 4975669
    Abstract: The Meissner effect is employed to generate a magnetic bottle in the interior region of a hollow superconductor, such as a hollow cylinder. One or both ends of the interior region of the hollow superconductor may be uncapped to permit coupling from the exterior to the interior of the superconductor.
    Type: Grant
    Filed: February 27, 1989
    Date of Patent: December 4, 1990
    Assignee: David Sarnoff Research Center, Inc.
    Inventor: Peter J. Wojtowicz
  • Patent number: 4659006
    Abstract: A typical method for bonding a die to a substrate includes the steps of placing a solder preform onto the substrate, contacting the die to the preform and applying heat sufficient for the solder to flow and wet the substrate and die forming a bond therebetween. The present invention comprises heating the substrate and preform to a temperature below the melting point of the solder preform and thereafter maintaining this temperature while applying pressure to the preform sufficient to substantially reduce the thickness of the preform and to cause the preform to adhere to the substrate prior to contacting the die thereto.
    Type: Grant
    Filed: September 26, 1985
    Date of Patent: April 21, 1987
    Assignee: RCA Corporation
    Inventor: Carl Polansky
  • Patent number: 4654678
    Abstract: The invention is an improved avalanche photodiode having reduced electrical noise arising from spurious surface generation of charge carriers. The avalanche photodiode includes active and neighboring regions adjacent a first surface of a semiconductor body with a gap region therebetween and a channel extending a distance into the semiconductor body from a portion of the second opposed surface opposite the gap region. A P-N junction is formed between regions of opposite conductivity type including a portion thereof over the channel. Since the dopant concentration at the junction is less over the channel, the local avalanche gain over the channel is less, thereby reducing the noise contribution from carriers generated in the gap region.
    Type: Grant
    Filed: August 30, 1985
    Date of Patent: March 31, 1987
    Assignee: RCA, Inc.
    Inventors: Alexander W. Lightstone, Paul P. Webb, Robert J. McIntyre
  • Patent number: 4642143
    Abstract: A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction.
    Type: Grant
    Filed: August 30, 1985
    Date of Patent: February 10, 1987
    Assignee: RCA Corporation
    Inventors: John C. Connolly, Dan Botez
  • Patent number: 4642513
    Abstract: The invention is an improved electrooptic assembly which comprises an electrooptic device mounted on a header and enclosed by a cover with a light-transmissive window mounted therein. The header includes a base plate with two major surfaces and a minor surface connecting the major surfaces with a segment of the cover attached to the minor surface. The minor surface is non-perpendicular to the major surfaces, thus allowing adjustment of the position of the window to achieve optimum emission or detection.
    Type: Grant
    Filed: February 8, 1985
    Date of Patent: February 10, 1987
    Assignee: RCA Corporation
    Inventors: Paul Nyul, Rudolph H. Hedel
  • Patent number: 4641311
    Abstract: A phase-locked semiconductor laser array includes a plurality of channels in a surface of a substrate with lands therebetween with laser oscillation occurring in the cavity region over each of the channels. The individual oscillators are coupled by the overlap of their evanescent fields to produce a phase-locked array. Phase-shifting means are included in alternate channels to ensure that the laser light emitted by the different lasing regions are in phase with one another. Preferably the phase-shifting means comprise portions of each of alternate channels having a different spacing from the cavity region than that of the remainder of the channels.
    Type: Grant
    Filed: December 20, 1983
    Date of Patent: February 3, 1987
    Assignee: RCA Corporation
    Inventor: Donald E. Ackley
  • Patent number: 4614292
    Abstract: A die bonder for bonding a semiconductor die to a substrate is disclosed. The die bonder comprises a support assembly within a frame, which assembly supports an arm. Attached to said arm is a means for holding a die, e.g. a vacuum collet. A variable electrical scrubbing means comprises a plunger which oscillates reciprocally within an electromagnetic coil and contacts the arm, or a tab integral with said arm. This provides a corresponding uniform scrubbing action, perpendicular to said arm in the plane of the interface between the die and the substrate, between a die held by the holding means and a solder material interposed between the die and substrate.
    Type: Grant
    Filed: September 30, 1985
    Date of Patent: September 30, 1986
    Assignee: RCA Corporation
    Inventors: Carl Polansky, Frank Z. Hawrylo
  • Patent number: 4532371
    Abstract: A photovoltaic array comprises a continuous semiconductor body with a plurality of spaced apart first and second electrical contacts on respective opposed surfaces of the body, thereby forming a plurality of photovoltaic cells with the cells series-connected to provide a higher output voltage. The invention is a series-connected array wherein the series connection between a pair of adjacent photovoltaic cells comprises a plurality of openings extending through the semiconductor body with an electrical contact of one cell extending into the plurality of openings to provide a connection with an opposed electrical contact of the next adjacent cell.
    Type: Grant
    Filed: March 12, 1984
    Date of Patent: July 30, 1985
    Assignee: RCA Corporation
    Inventors: Joseph J. Hanak, Gerald E. Nostrand
  • Patent number: 4219826
    Abstract: A recording medium comprises a substrate coated with a light reflecting layer which in turn is coated with a light absorbing layer selected from the group consisting of Pt complexes of bis-(dithio-.alpha.-diketones) which have the formula: ##STR1## wherein R is a phenyl or substituted phenyl group. During recording, portions of the absorbing layer are ablated, vaporized or melted by an intensity-modulated, focussed light beam, thereby exposing portions of the reflective layer and recording video information as a reflective-antireflective pattern.
    Type: Grant
    Filed: July 10, 1978
    Date of Patent: August 26, 1980
    Assignee: RCA Corporation
    Inventors: Allen Bloom, William J. Burke, Daniel L. Ross
  • Patent number: 4217683
    Abstract: A method and apparatus for welding a header to a heat sensitive cap to form an electro-optic device housing without weld flanges. A collet electrode is used to provide a radially compressive force which provides good electric and thermal contact to the wall of the heat sensitive cap and maintains the glass to metal seal under compression.
    Type: Grant
    Filed: December 21, 1978
    Date of Patent: August 19, 1980
    Assignee: RCA Corporation
    Inventor: Rene E. Cardinal
  • Patent number: 4202703
    Abstract: A solution of tetramethylammonium hydroxide and a surfactant in a lower alcohol solubilizes photoresist films without attacking materials found in integrated circuit devices so that a subsequent 1,1,1-trichloroethane rinse completely removes the photoresist.
    Type: Grant
    Filed: November 7, 1977
    Date of Patent: May 13, 1980
    Assignee: RCA Corporation
    Inventors: John R. Zuber, Herbert Foxman
  • Patent number: 4202928
    Abstract: Amorphous silicon layers deposited on a suitable substrate in a glow discharge of silane or other silicon containing compounds are sensitive optical storage media.
    Type: Grant
    Filed: July 24, 1978
    Date of Patent: May 13, 1980
    Assignee: RCA Corporation
    Inventor: David L. Staebler
  • Patent number: 4170616
    Abstract: A method for fabricating a Fresnel lens comprising a plastic layer contacted to a transparent substrate by evacuating a chamber formed by the lens mold and the substrate through a pumping tube; flowing a liquid plastic through the pumping tube into the chamber; and venting the pumping tube to the atmosphere so that atmospheric pressure forces the plastic to fill the entire chamber.
    Type: Grant
    Filed: May 30, 1978
    Date of Patent: October 9, 1979
    Assignee: RCA Corporation
    Inventor: Robert W. Jebens