Abstract: Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming a dielectric layer that includes a plurality of burls for supporting an object. The example method can further include forming an electrostatic layer that includes one or more electrodes. The example method can further include generating, using the electrostatic layer, an electrostatic force to electrostatically clamp the object to the plurality of burls in response to an application of one or more voltages to the one or more electrodes. In some aspects, a first magnitude of the electrostatic force in a first region of the dielectric layer can be different than a second magnitude of the electrostatic force in a second region of the dielectric layer. For example, the first magnitude and the second magnitude can be part of a linear, non-linear, or stepped (e.g., multi-level) electrostatic force gradient.

Abstract: A temperature conditioning system using conditioning liquid to condition a temperature of an object, the system including a conditioning conduit, a return conduit, a supply chamber, and a discharge chamber, wherein the temperature conditioning system is arranged to provide a static pressure difference between the supply chamber outlet and the discharge chamber inlet to create a flow through the conditioning conduit. A lithography apparatus and a method of temperature conditioning an object is also described.

Abstract: A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.

Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining a reconstruction recipe describing at least nominal values for use in a reconstruction of a parameterization describing a target. The method includes obtaining first measurement data relating to measurements of a plurality of targets on at least one substrate, the measurement data relating to one or more acquisition settings and performing an optimization by minimizing a cost function which minimizes differences between the first measurement data and simulated measurement data based on a reconstructed parameterization for each of the plurality of targets. A constraint on the cost function is imposed based on a hierarchical prior. Also disclosed is a hybrid model method comprising obtaining a coarse model operable to provide simulated coarse data; and training a data driven model to correct the simulated coarse data so as to determine simulated data for use in reconstruction.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: providing an initial prediction model including a plurality of model parameters to one or more remote locations; receiving at least one updated model parameter from the one or more remote locations, the at least one model parameter is updated by training the initial prediction model with local data at the one or more remote locations; determining aggregated model parameters based on the at least one updated model parameter received from the one or more remote locations; and adjusting the initial prediction model based on the aggregated model parameters, the adjusted prediction model being operable to configure the semiconductor manufacturing process.

Abstract: The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

Abstract: Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer, a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A system for positioning, a stage system, a lithographic apparatus, a method for positioning and a method for manufacturing a device in which use is made of a stage system that includes a plurality of gas bearing devices. Each gas bearing device includes: a gas bearing body, which has a free surface, a primary channel which extends through the gas bearing body and has an inlet opening in the free surface, a secondary channel system which extends through the gas bearing body and which has a plurality of discharge openings in the free surface. The flow resistance in the secondary channel system is higher than the flow resistance in the primary channel.

Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data.

Abstract: An assembly and method for separating first radiation and second radiation in the far field, wherein the first radiation and the second radiation have non-overlapping wavelengths, The assembly comprises a capillary structure, wherein the first radiation and the second radiation propagate coaxially along at least a portion of the capillary structure, and an optical structure configured to control the spatial distribution of the first radiation outside of the capillary structure, through interference, such that the intensity of the first radiation in the far field is reduced along an optical axis of the second radiation.

Abstract: A laser system comprising: a laser operable to generate a laser beam; an optical system comprising a first optical element and a second optical element; and an output through which the laser beam exits the laser system; the laser, optical system and output arranged such that the laser beam travels to the first optical element, the second optical element and the output sequentially; wherein the first optical element has a first focal length, the second optical element has a second focal length equal to the first focal length, and the second optical element is spaced from the first optical element by a distance of two times the first focal length.

Abstract: Disclosed is a connector for connecting one fluid handling device (52) such as a conduit to another fluid handling device (70) such as another conduit in which the faces of fittings (54) attached to glands (50) in the connector are given complementary mating configurations (58, 60, 82) so they can mesh that lack circular symmetry so that the faces do not rotate with respect to one another when the faces are subjected to torque when a connection is being made.

Abstract: An apparatus for supplying a target material includes a reservoir system, a priming system, and a transport system that extends from the priming system to the reservoir system. The reservoir system includes a reservoir in fluid communication with a nozzle supply system. The priming system includes a priming chamber defining a primary cavity; and a removable carrier configured to be received in the primary cavity. The removable carrier defines a secondary cavity configured to receive a solid matter that includes the target material. The transport system is configured to provide a fluid flow path between the priming system and the reservoir system.

Abstract: A substrate table for supporting a substrate includes a surface and coarse burls. Each of the coarse burls includes a burl-top surface and fine burls. The coarse burls are disposed on the surface of the substrate table. The fine burls are disposed on the burl-top surface. The fine burls contact the substrate when the substrate table supports the substrate.

Abstract: A method for improved sequencing of light delivery in a lithographic process includes determining a sequence of intensities of light to be delivered that includes an interval within the sequence of intensities where substantially no light is delivered to the substrate and delivering light to a substrate by a light source utilizing a digital mirror device (DMD) according to the sequence of intensities.

Abstract: A lithographic apparatus comprising an illumination system configured to condition a radiation beam and a uniformity correction system configured to adjust an intensity profile of the radiation beam. The lithographic apparatus comprises a control system configured to control the uniformity correction system at least partially based on a thermal status criterion that is indicative of a thermal state of a part of the lithographic apparatus.

Abstract: A method of determining a relationship between a stochastic variation of a characteristic of an aerial image or a resist image and one or more design variables, the method including: measuring values of the characteristic from a plurality of aerial images and/or resist images for each of a plurality of sets of values of the design variables; determining a value of the stochastic variation, for each of the plurality of sets of values of the design variables, from a distribution of the values of the characteristic for that set of values of the design variables; and determining the relationship by fitting one or more parameters from the values of the stochastic variation and the plurality of sets of values of the design variables.