Abstract: A lens, a solar cell unit including the lens and a joining method for the solar cell unit, wherein the lens has a main body with a substantially planar base, a receiving surface opposite the base, a side surface area connecting the base and the receiving surface and an optical axis extending perpendicular to the base and at least one bulge is arranged on the main body of the lens at a first height above the base on the side surface area.

Abstract: A two-step hole etching method including: providing a semiconductor wafer which has a plurality of solar cell stacks and performing a first and a second processing step. In the first processing step, a first resist layer is applied to a top surface of the semiconductor wafer, at least a first opening is produced in the first resist layer and, via a first etching process, a hole which extends beyond a p/n junction of the Ge sub-cell into the semiconductor wafer is produced in the area of the first opening. In the second process step a second resist layer is applied to the top surface of the semiconductor wafer, a second opening greater than the first opening and surrounding the hole is produced in the second resist layer, and, the hole is widened in an area which extends to the Ge sub-cell serving as an etch stop layer.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A vapor phase epitaxy method including: providing a III-V substrate of a first conductivity type, introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature, heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow, depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III, wherein during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type is added to the initial gas flow.

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from a p-doping to an n-doping on a surface of a substrate or a preceding layer from the vapor phase from an epitaxial gas flow, at least one first precursor for an element of main group III, and at least one second precursor for an element of main group V. When a first growth height is reached, a first initial doping level is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, and subsequently, by stepwise or continuously changing the ratio of the first mass flow to the second mass flow and by stepwise or continuously increasing a mass flow of a third precursor for an n-type dopant in the epitaxial gas flow.

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase of an epitaxial gas flow, comprising at least one carrier gas, a first precursor for a first element from main group III and at least one second precursor for a first element from main group V, and fed into the reaction chamber, wherein, when a first growth level is reached, an initial n-doping level is set by means of a ratio, leading to a p-doping, of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow and with the addition of a third mass flow of a third precursor for an n-type dopant to the epitaxial gas flow, subsequently.

Abstract: A light receiving unit having a first energy source made up of two sub sources. A first terminal contact is formed at the upper face of the first sub source and a second terminal contact is formed at the lower face of the second sub source. The sub source has at least one semiconductor diode that has an absorption edge adapted to a first wavelength of light and the second semiconductor diode has an absorption edge adapted to a second wavelength of light which is different from the first wavelength of light, such that the first sub source generates electric voltage upon being irradiated with the first wavelength of light and the second sub source generates electric voltage upon being irradiated with the second wavelength of light.

Abstract: A stacked multi-junction solar cell with a front side contacted through the rear side and having a solar cell stack having a Ge substrate layer, a Ge subcell, and at least two III-V subcells, with a through contact opening, a front terminal contact, a rear terminal contact, an antireflection layer formed on a part of the front side of the multi-junction solar cell, a dielectric insulating layer, and a contact layer. The dielectric insulating layer covers the antireflection layer, an edge region of a top of the front terminal contact, a lateral surface of the through contact opening, and a region of the rear side of the solar cell stack adjacent to the through contact opening. The contact layer from a region of the top of the front terminal contact that is not covered by the dielectric insulating layer through the through contact opening to the rear side.

Abstract: A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.

Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Abstract: A monolithic multijunction solar cell having exactly four subcells, an uppermost first subcell having a layer made up of a component having the elements AlInP, and the lattice constant a1 of the layer being between 0.572 nm and 0.577 nm, and the indium content being between 64% and 75%, and the Al content being between 18% and 32%, and the third subcell having a layer made up of a compound having at least the elements GaInAs, and the lattice constant of the layer being between 0.572 and 0.577, and the indium content of the layer being greater than 17%, and the second subcell comprising a layer including a compound which has at least the elements GaInAsP, the layer having an arsenic content between 22% and 33% and an indium content between 52% and 65%. and the lattice constant a2 being between 0.572 and 0.577.

Abstract: A passivation method for a passage opening of a wafer, at least having the steps of: providing a wafer having a top, a bottom and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate that forms the bottom of the wafer, a Ge sub-cell, at least two III-V sub-cells, in the named order, and at least one passage opening extending from the top to the bottom of the wafer, with a contiguous side wall and a circumference that is oval in cross section, and applying a dielectric insulating layer by means of chemical vapor deposition to the top of the wafer, the bottom of the wafer and the side wall of the passage opening.

Abstract: A stacked multi-junction solar cell with a metallization comprising a multilayer system, wherein the multi-junction solar cell has a germanium substrate forming a bottom side of the multi-junction solar cell, a germanium subcell, and at least two III-V subcells, the multilayer system of the metallization has a first layer, comprising gold and germanium, a second layer comprising titanium, a third layer, comprising palladium or nickel or platinum, with a layer thickness, and at least one metallic fourth layer, and the multilayer system of the metallization covers at least one first and second surface section and is integrally connected to the first and second surface section, wherein the first surface section is formed by the dielectric insulation layer and the second surface section is formed by the germanium substrate or by a III-V layer.

Abstract: A protection method for through-holes of a semiconductor wafer having the steps: providing a semiconductor wafer, and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate forming a bottom side of the semiconductor wafer, a Ge subcell, and at least two III-V subcells in the order mentioned, as well as at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall and a circumference that is oval in cross section; applying a photoresist layer to a top side of the semiconductor wafer and to at least one region of the side wall of the through-hole, said region adjoining the top side, and applying an organic filler material by means of a printing process to a region of the top side, said region comprising the through-hole, and into the through-hole.

Abstract: A marking method for applying a unique identification to each individual solar cell stack of a semiconductor wafer, at least comprising the steps: Providing a semiconductor wafer having an upper side and an underside, which comprises a Ge substrate forming the underside; and generating an identification with a unique topography by means of laser ablation, using a first laser, on a surface area of the underside of each solar cell stack of the semiconductor wafer, the surface area being formed in each case by the Ge substrate or by an insulating layer covering the Ge substrate.

Abstract: A stacked multijunction solar cell having a dielectric insulating layer system, a germanium substrate, which forms an underside of the multijunction solar cell, a germanium subcell and at least two III-V subcells, which follow each other in the specified order, the insulating layer system includes a layer sequence made up of at least one bottom insulating layer, which is integrally connected to a first surface section of the multijunction solar cell and a top insulating layer forming an upper side of the insulating layer system, and a metal coating of the multijunction solar cell is integrally and electrically conductively connected to a second surface section abutting the first surface section of the multijunction solar cell and is integrally connected to a section of the upper side of the insulating layer system, and the top insulating layer comprises amorphous silicon or is made up of amorphous silicon.

Abstract: A two-step hole etching method including: providing a semiconductor wafer which has a plurality of solar cell stacks and performing a first and a second processing step. In the first processing step, a first resist layer is applied to a top surface of the semiconductor wafer, at least a first opening is produced in the first resist layer and, via a first etching process, a hole which extends beyond a p/n junction of the Ge sub-cell into the semiconductor wafer is produced in the area of the first opening. In the second process step a second resist layer is applied to the top surface of the semiconductor wafer, a second opening greater than the first opening and surrounding the hole is produced in the second resist layer, and, the hole is widened in an area which extends to the Ge sub-cell serving as an etch stop layer.