Abstract: The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.

Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A load lock device includes a load lock chamber including a first conveyance port connected to a transfer chamber connected to a reduced-pressure processing device, and a second conveyance port connected to a loader chamber; a substrate holder configured to hold a substrate in the load lock chamber; a driving mechanism arranged below the load lock chamber to move the substrate holder up and down and connected to the substrate holder via a connecting member; an extension chamber extended from a lower portion of the load lock chamber to a side; and a pump arranged below the extension chamber and configured to discharge a gas in the load lock chamber via the extension chamber. The extension chamber includes a bottom surface with an opening at a position deviated from a vertically lower position of the substrate holder, and the pump is connected to the opening.

Abstract: A load lock device includes a load lock chamber, and a substrate holding structure configured to hold a substrate in the load lock chamber, wherein the substrate holding structure includes a facing surface facing the substrate, and is configured to allow a gas to flow through a space between the substrate and the facing surface, and in a state in which the substrate is held by the substrate holding structure, a distance between the substrate and a portion located inside an outer edge of the facing surface is larger than a distance between the substrate and the outer edge of the facing surface.

Abstract: A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.

Abstract: An X-ray generation device includes a cathode including an electron source generating an electron beam, an anode including a target to transmit an X-ray generated by collision of the electron beam, and a convergence electrode converging the electron beam toward the target. The target has a first region having a locally small thickness and a second region having a larger thickness than the first region. The X-ray generation device further includes a deflection unit to switch an incident position of the electron beam between the first region and the second region. The deflection unit has an adjustment mode to adjust an X-ray focal spot diameter and an X-ray generation mode to generate an X-ray, the electron beam is caused to enter the first region in the adjustment mode, and the electron beam is caused to enter the second region in the X-ray generation mode.

Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member. The fixed member contains at least one of an oxide and a nitride.

Abstract: An X-ray generation apparatus includes an X-ray generation unit, a storage container configured to store the X-ray generation unit, and an insulating component arranged between an inner surface of the storage container and at least a part of the X-ray generation unit. The insulating component includes a first insulating member and a second insulating member, the first insulating member includes a first portion having a first surface, and a second portion having a second surface, a step difference is formed by the first surface and the second surface, and the second portion has a thickness smaller than that of the first portion, an adhesive surface of the second insulating member and the second surface of the first insulating member are connected by an adhesive material, and a flatness of the second surface is better than a flatness of the first surface.

Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member. The fixed member contains at least one of an oxide and a nitride.

Abstract: An ionization gauge includes an anode having a rod shape, and a cathode including a cathode plate having a through hole through which the anode extends. The cathode includes a first cathode plate including a through hole through which the anode extends, and a storage portion configured to store the electromagnetic wave source, a second cathode plate arranged separately from the first cathode plate, a third cathode plate arranged between the first cathode plate and the second cathode plate to be in contact with the first cathode plate, and a member configured to surround the first cathode plate, the second cathode plate, and the third cathode plate.

Abstract: An electron generating apparatus includes a filament, a power supply configured to supply power to the filament so as to make the filament emit an electron, and a controller configured to repeatedly detect a value having a correlation with power supplied from the power supply to the filament, determine whether a state of the filament satisfies a notification condition, by using a plurality of detected values, and perform notification when the state satisfies the notification condition.

Abstract: An X-ray generation apparatus includes an X-ray generation unit, a storage container configured to store the X-ray generation unit, and an insulating component arranged between an inner surface of the storage container and at least a part of the X-ray generation unit. The insulating component includes a first insulating member and a second insulating member, the first insulating member includes a first portion having a first surface, and a second portion having a second surface, a step difference is formed by the first surface and the second surface, and the second portion has a thickness smaller than that of the first portion, an adhesive surface of the second insulating member and the second surface of the first insulating member are connected by an adhesive material, and a flatness of the second surface is better than a flatness of the first surface.

Abstract: The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

Abstract: An ionization gauge includes an anode having a rod shape, and a cathode including a cathode plate having a through hole through which the anode extends. The cathode includes a first cathode plate including a through hole through which the anode extends, and a storage portion configured to store the electromagnetic wave source, a second cathode plate arranged separately from the first cathode plate, a third cathode plate arranged between the first cathode plate and the second cathode plate to be in contact with the first cathode plate, and a member configured to surround the first cathode plate, the second cathode plate, and the third cathode plate.

Abstract: A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.