Abstract: A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice.

Abstract: A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice.

Abstract: A conductive structure for a semiconductor integrated circuit is provided. The semiconductor integrated circuit comprises a pad, and a passivation layer partially overlapping the pad, which jointly define an opening portion. The conductive structure is adapted to be electrically connected to the pad through the opening portion. The conductive structure comprises an under bump metal (UBM). A first conductor layer formed on the under bump metal is electrically connected to the under bump metal. A second conductor layer formed on the first conductor layer and electrically connected to the first conductor layer and a cover conductor layer. Furthermore, the under bump metal, the first conductor layer, and the second conductor jointly define a basic bump structure. The cover conductor layer is adapted to cover the basic bump structure.

Abstract: A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.

Abstract: The present invention provides a chip-stacked package structure with leadframe having bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads and is vertically distant from the plurality of inner leads; a chip-stacked structure formed with a plurality of chips that stacked together and set on the die pad, the plurality of chips and the plurality of inner leads being electrically connected with each other; and an encapsulant covering over the chip-stacked package structure and the leadframe, in which the leadframe comprises at least a bus bar, which is provided between the plurality of inner leads arranged in rows facing each other and the die pad.

Abstract: The present invention provides a stacked chip package structure with leadframe having inner leads with transfer pad, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads arranged in rows facing each other and vertically distant from the plurality of inner leads; an offset chip-stacked structure formed with a plurality of chips stacked together, the offest chip-stacked structure being set on the die pad and electrically connected to the plurality of inner leads arranged in rows facing each other; and an encapsulant covering the offset chip-stacked structure and the leadframe, the plurality of outer leads extending out of said encapsulant; the improvement of which being that the inner leads of the leadframe are coated with an insulating layer and a plurality of metal pads are selectively formed on the insulating layer.

Abstract: The present invention provides a chip-stacked package structure with leadframe having bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads and is vertically distant from the plurality of inner leads; a chip-stacked structure formed with a plurality of chips that stacked together and set on the die pad, the plurality of chips and the plurality of inner leads being electrically connected with each other; and an encapsulant covering over the chip-stacked package structure and the leadframe, in which the leadframe comprises at least a bus bar, which is provided between the plurality of inner leads arranged in rows facing each other and the die pad.

Abstract: A method of fabricating a chip package structure includes the steps of providing a lead frame having a die pad, plural leads and at least one structure enhancement element. A chip is then disposed on the die pad and plural bonding wires are formed to electrically connect the chip to the leads. Then, an upper encapsulant and a first lower encapsulant are formed on an upper surface and a lower surface of the lead frame, respectively. The first lower encapsulant has plural concaves to expose the structure enhancement element. Finally, the structure enhancement element is etched with use of the first lower encapsulant as an etching mask until the die pad and one of the leads connected by the structure enhancement element, or two of the adjacent leads connected thereby are electrically insulated.

Abstract: A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask.

Abstract: A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.

Abstract: A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads.

Abstract: A bump structure with an annular support suitable for being disposed on a substrate is provided. The substrate has at least one pad and a passivation layer that has at least one opening exposing a portion of the pad. The bump structure with the annular support includes an under ball metal (UBM) layer, a bump, and an annular support. The UBM layer is disposed on the passivation layer and covers the pad exposed by the passivation layer. The bump is disposed on the UBM layer over the pad, and a diameter of a lower surface of the bump is less than the diameter of an upper surface thereof. The annular support surrounds and contacts the bump, and a material of the annular support is photoresist. An under cut effect is not apt to happen on the bump structure.

Abstract: A fabricating process of a chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provided, wherein bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the second substrate and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first and second B-staged adhesive layer such that the bumps pierce through the second B-staged adhesive layer and are electrically connected to the second bonding pads, wherein each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps.

Abstract: A chip package with asymmetric molding including a lead frame, a chip, an adhesive layer, bonding wires and an encapsulant, is provided. The lead frame includes a frame body and at least a turbulent plate. The frame body has inner lead portions and outer lead portions. The turbulent plate is bended upwards to form a bulge portion and the first end of the turbulent plate is connected to the frame body. The chip is fixed under the inner lead portions and the turbulent plate is located at one side of the chip. The adhesive layer is disposed between the chip and the inner lead portions, and the bonding wires are electrically connected between the chip and the corresponding inner lead portions, respectively. The encapsulant encapsulates at least the chip, the bonding wires, the inner lead portions, the adhesive layer and the turbulent plate.

Abstract: A fabricating process of chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provide, wherein a plurality of bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate or on the second substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the first B-staged adhesive layer and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first B-staged adhesive layer and the second B-staged adhesive layer such that each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps.

Abstract: A BGA package primarily includes a leadless leadframe with a plurality of leads, a chip disposed on the leads, a die-attaching layer adhering to an active surface of the chip and the top surfaces of the leads, a plurality of bonding wires electrically connecting the chip to the leads, an encapsulant, and a plurality of solder balls. Each lead has a bottom surface including a wire-bonding area and a ball-placement area, moreover, a plurality of lips project from the bottom surfaces of the leads around the ball-placement areas. The encapsulant encapsulates the chip, the bonding wires, the die-attaching layer, and the top surfaces, the bottom surfaces except the ball-placement areas. The solder balls are disposed on the ball-placement areas.

Abstract: A thin-film fingerprint sensor package primarily comprises a fingerprint sensor chip, a plurality of bumps, a wiring film with a plurality of leads and at least an encapsulant to encapsulate the bumps. A sensing area is formed on an active surface of the fingerprint sensor chip. The bumps are disposed on the active surface and located at two opposing sides of the sensing area. The wiring film has an opening to expose the sensing area. Each lead has an inner end and an outer end. The inner ends are located at two opposing sides of the opening and are bonded to the bumps. Preferably, the wiring film has a flexible extension and the outer ends of the leads are rerouted to the extension for external electrical connections.

Abstract: A dice rearrangement package structure is provided, which a dice having an active surface and a bottom surface, and a plurality of pads is disposed on the active surface; a package body is provided to cover the dices and the plurality of pads being exposed; one ends of plurality of metal traces is electrically connected to the each pads; a protection layer is provided to cover the active surface and the other ends of the exposed metal traces is electrically connected to the plurality of conductive elements, the characteristic in that the package body is a B-stage material.

Abstract: A chip package including a base, a chip, a molding compound and a plurality of outer terminals is provided. The base is essentially consisted of a patterned circuit layer having a first surface and a second surface opposite to each other and a solder mask disposed on the second surface, wherein the solder mask has a plurality of first openings by which part of the patterned circuit layer is exposed. The chip is disposed on the first surface and is electrically connected to the patterned circuit layer. The molding compound covers the pattern circuit layer and fixes the chip onto the patterned circuit layer. The outer terminals are disposed in the first openings and electrically connected to the patterned circuit layer.

Abstract: A die rearrangement package structure is provided, which includes a die that having an active surface and a bottom surface, and a plurality of pads is disposed on the active surface; a package body is provided to cover a die and the active surface being exposed; a polymer material with at least one slit is provided to cover the active surface and the pads is exposed from said slits; one ends of a plurality of metal traces is electrically connected to each pads; a protective layer is provided to cover the active surface of the dies and each metal traces, and the other ends of the metal traces being exposed; a plurality of connecting elements is electrically connected other ends of the metal traces, the characterized in that: the package body is a B-stage material.