Abstract: While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 ?m and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.

Abstract: A composite oxide powder including a composition formula (1), wherein the ratio ?/? of a surface area value ?(m2/g) calculated by a BET one-point method to a surface area value ?(m2/g) calculated from a formula (2) is greater than 1.0 and equal to or less than 1.5 and the surface area value ? is equal to or less than 20 m2/g. ABO3-? (1) (wherein A is one or more types of elements (La, Sr, Sm, Ca and Ba), B is one or more types of elements (Fe, Co, Ni and Mn) and 0??<1); and surface area value ?(m2/g)=specific surface area value ?- surface area value ?(2) (the specific surface area value ?(m2/g) is a value in a total pore size range measured by a mercury intrusion method.The specific surface area value ?(m2/g) is a value in a range of pore sizes that are larger than a 50% cumulative particle size.

Abstract: A silver powder containing: silver particles; and an adherent that is attached to surfaces of the silver particles and contains a metal oxide that has a melting point lower than a melting point of silver.

Abstract: Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 ?m or more and 0.7 ?m or less, and the skewness Rsk of the surface is a positive value.

Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.

Abstract: Provided is a lithium-containing oxide precursor solution for coating an electrode active material that is capable of improving the coverage of a coating layer that is formed by applying the lithium-containing oxide precursor solution to the surface of powder of the electrode active material and king it, and that is easy to handle in a normal atmosphere because a solution composed mainly of water is used as a solvent. The lithium-containing oxide precursor solution for coating an electrode active material includes Li in an amount of 0.1 mass % or more and 5.0 mass % or less, at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I in an amount of 0.05 mass % or more and 35 mass % or less, and water in an amount of 60 mass % or more and 98.4 mass % or less. The value of absorbance of the solution at a wavelength of 660 nm is 0.1 or less, and the value of surface energy thereof is 72 mN/m or less.

Abstract: Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 105 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

Abstract: Provided are a coated active material having excellent properties that can reduce the reaction resistance of a battery, and a method for producing a coated active material that can achieve both a high processing speed and high processing quality. The method for producing a coated active material includes: mixing an electrode active material and a coating solution containing Li and an element M and having a surface energy of 72 mN/m or less to prepare a slurry; and drying the slurry in an air flow and thereby causing a Li-containing oxide to adhere to at least a portion of the surface of the electrode active material, to obtain a coated active material, where the element M is at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I.

Abstract: According to the present invention, there is provided a carrier core material that is formed of ferrite particles in which 48 to 52 mass % of Fe, 16 to 22 mass % of Mn, 1.0 to 3.5 mass % of Mg and 0.05 to 0.5 mass % of Ca are included, and when an electrical resistance value with an applied voltage of 500 V in an environment (in an L/L environment) in which the temperature is 10° C. and the relative humidity is 35% is RL (?·cm), and an electrical resistance value with an applied voltage of 500 V in an environment (in an H/H environment) in which the temperature is 30° C. and the relative humidity is 70% is RH (?·cm), formula (1) below is satisfied. 0.1?(log RL?log RH)?0.

Abstract: Provided is a method of producing spherical silver powder, which makes it possible to easily produce spherical silver powder having primary particle diameters with less variation than conventional powder and spherical silver powder obtained by the method. The method of producing spherical silver powder includes a reduction precipitation step of precipitating silver particles by reduction by adding a reductant including hydrazine carbonate to an aqueous reaction system containing silver ions.

Abstract: To improve light emission efficiency, in a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAsySb1-y layers (0<y<1); and a second InAs layer doped with a p-type dopant, an AlxIn1-xAs electron blocking layer (0.05?x?0.40) with a thickness of 5 nm to 40 nm is provided between the active layer and the second InAs layer.

Abstract: In a carrier core material according to the present invention, the volume moment mean D [4, 3] of O. Bluntness measured with an injection type image analysis particle size distribution meter is equal to or greater than 65% and equal to or less than 80%, and the volume moment mean D [4, 3] of ISO Roundness is equal to or greater than 80% and equal to or less than 86%. In this way, it is possible to suppress development memory and carrier adherence.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

Abstract: Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

Abstract: A producing method of a solution that contains lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.3 mass % or less. The solution is suitable for forming a coating layer capable of improving battery characteristics of an active material in a battery.

Abstract: The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.

Abstract: There are provided a bonding material, which can prevent voids from being generated in a silver bonding layer by preventing the entrainment of bubbles during the formation of a coating film even if the coating film is thickened, and a bonding method using the same. The bonding material of a silver paste includes fine silver particles, a solvent and an addition agent, wherein the solvent contains a first solvent of a diol, such as octanediol, and a second solvent which is a polar solvent (preferably one or more selected from the group consisting of dibutyl diglycol, hexyl diglycol, decanol and dodecanol) having a lower surface tension than that of the first solvent and wherein the addition agent is a triol.