Abstract: Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.

Abstract: A deep ultraviolet light-emitting element of this disclosure includes, in this order, an n-type semiconductor layer; a light-emitting layer; and a p-type semiconductor layer. An emission spectrum of the deep ultraviolet light-emitting element has a primary emission peak wavelength in a wavelength range of 200 nm or more and 350 nm or less, and a blue-violet secondary light emission component having a relative emission intensity of 0.03% to 10% across a wavelength range of 430 to 450 nm, a yellow-green secondary light emission component having a relative emission intensity of 0.03 to 10% across a wavelength range of 540 to 580 nm, when the relative emission intensities are expressed relative to an emission intensity at the primary emission peak wavelength taken as 100%. The ratio of an emission intensity at a wavelength of 435 nm to an emission intensity at a wavelength of 560 nm is 0.5 to 2.

Abstract: An iron powder and method of making an iron powder. The method includes a step of neutralizing an acidic aqueous solution containing a trivalent iron ion and a phosphorus-containing ion, with an alkali aqueous solution, so as to provide a slurry of a precipitate of a hydrated oxide, or a step of adding a phosphorus-containing ion to a slurry containing a precipitate of a hydrated oxide obtained by neutralizing an acidic aqueous solution containing a trivalent iron ion with an alkali aqueous solution. A silane compound is added to the slurry so as to coat a hydrolysate of the silane compound on the precipitate of the hydrated oxide. The precipitate of the hydrated oxide after coating is recovered through solid-liquid separation, the recovered precipitate is heated to provide iron particles coated with a silicon oxide, and a part or the whole of the silicon oxide coating is dissolved and removed.

Abstract: The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

Abstract: To provide magnetic composite particles which can be separated from a sample solution in a short period of time using magnetism, and furthermore, have an excellent dispersion stability in the sample solution, which are magnetic composite particles in which an outer shell is formed on surfaces of core particles containing an inorganic oxide or a polymer, wherein the outer shell comprises magnetic nanoparticles and a silicon compound, the value of the volume average particle diameter (dTEM) of the magnetic composite particles measured by a transmission electron microscope is 30 nm or more to 210 nm or less, and the value of (dDLS)/(dTEM) which is the ratio of the value of the particle diameter (dDLS) of the particles measured by a dynamic light scattering method and the value of the volume average particle diameter (dTEM) is 2.0 or less.

Abstract: There is provided a solution containing lithium and at least one of a niobium complex and a titanium complex, excellent in storage stability, and suitable for forming a coating layer capable of improving battery characteristics of an active material, and a related technique, which is the solution containing lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.2 mass % or less.

Abstract: This disclosure relates to a fine silver particle dispersion including: (1) 65 to 95.4% by weight of fine silver particles which have an average primary particle diameter of 10 to 190 nm and which comprise 25% by number or less of silver particles having a primary particle diameter of 100 nm or larger, (2) 4.5 to 34.5% by weight of a solvent, and (3) 0.1 to 1.0% by weight of ethyl cellulose having a weight average molecular weight of 10,000 to 120,000.

Abstract: A soft magnetic powder, including an Fe alloy, and containing 0.1 to 15 mass % of Si, wherein a ratio (Si/Fe) of an atomic concentration of Si and an atomic concentration of Fe is from 4.5 to 30 at a depth of 1 nm from a particle surface of the soft magnetic powder.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50?z?0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01?b?0.95).

Abstract: Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting element 100 of this disclosure comprises an n-type semiconductor layer 30, a light-emitting layer 40, and a p-type semiconductor layers 60, on a substrate 10, in this order. The light-emitting layer 40 emits deep ultraviolet light. The p-type semiconductor layers 60 comprise a p-type first layer 60A and a p-type contact layer 60B directly on the p-type first layer 60A. The p-type contact layer 60B is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layer 60B from the p-type first layer 60A is 10% or higher.

Abstract: There is produced a fine silver particle dispersing solution which contains: fine silver particles (the content of silver in the fine silver particle dispersing solution being 30 to 95% by weight), which have an average primary particle diameter of greater than 100 nm and not greater than 300 nm and which are coated with an amine having a carbon number of 8 to 12, such as octylamine, serving as an organic protective material; a polar solvent (5 to 70% by weight) having a boiling point of 150 to 300° C.; and an acrylic dispersing agent (5% by weight or less with respect to the fine silver particles), such as a dispersing agent of at least one of acrylic acid ester and methacrylic acid ester.

Abstract: Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an emission wavelength of 200 nm to 350 nm, and includes an n-type layer 30, a light emitting layer 40, an electron blocking layer 60, and a p-type contact layer 70 in this order. The electron blocking layer 60 has a co-doped region layer 60c, the p-type contact layer 60 is made of p-type AlxGa1-xN (0?x?0.1), and the p-type contact layer 60 has a thickness of 300 nm or more.

Abstract: A magnetic compound having a small dielectric loss and an antenna constituted by the magnetic compound and an electronic device incorporating the antenna are provided by a metal magnetic powder which is well dispersed in a resin having small dielectric loss, and a magnetic powder composite including: a metal magnetic powder; and one or more elements selected from carboxylic acid or its anhydride, aromatic carboxylic acid ester, and a derivative thereof, having a property that real part ?? permeability is 1.45 or more, tan ?? is 0.1 or less, tan ?? is 0.05 or less at a measuring frequency of 2 GHz, when a magnetic powder composite is prepared by adding 5 parts by mass of one or more elements selected from the carboxylic acid or its anhydride, the aromatic carboxylic acid ester, and the derivative thereof to 100 parts by mass of the metal magnetic powder.

Abstract: Provided is a method of producing spherical silver powder, which makes it possible to easily produce spherical silver powder having primary particle diameters with less variation than conventional powder and spherical silver powder obtained by the method. The method of producing spherical silver powder includes a reduction precipitation step of precipitating silver particles by reduction by adding a reductant including hydrazine carbonate to an aqueous reaction system containing silver ions.

Abstract: A method for producing a Fe—Co alloy powder suitable for an antenna includes steps, wherein when introducing an oxidizing agent into an aqueous solution containing Fe ions and Co ions to generate crystal nuclei and cause precipitation and growth of a precursor having Fe and Co as components, Co in an amount corresponding to 40% or more of the total amount of Co used for the precipitation reaction is added to the aqueous solution at a time after the start of the crystal nuclei generation and before the end of the precipitation reaction to obtain the precursor. Then, a dried product of the precursor is reduced to obtain a Fe—Co alloy powder. This Fe—Co alloy powder has a mean particle size of 100 nm or less, a coercive force Hc of 52.0 to 78.0 kA/m, and a saturation magnetization ss of 160 Am2/kg or higher.

Abstract: Provided are a group III nitride semiconductor light emitting element and a method of manufacturing the same. A group III nitride semiconductor light emitting element of the present disclosure comprises in this order, in a substrate, an n-type semiconductor layer, a light emitting layer, a p-type electron blocking layer, a p-type contact layer made of AlxGa1-xN, and a p-side reflection electrode, wherein a center emission wavelength of light emitted from the light emitting layer is 270 nm or greater and 330 nm or smaller, the p-type contact layer is in contact with the p-side reflection electrode, and has a thickness of 20 nm or greater and 80 nm or smaller, and the Al composition ratio x of the p-type contact layer satisfies the following Formula: 2.09?0.006×?p?x?2.25?0.006×?p where ?p is the center emission wavelength in nanometer.

Abstract: A surface-modified iron-based oxide magnetic particle powder has good solid-liquid separation property in the production process, has good dispersibility in a coating material for forming a coating-type magnetic recording medium, has good orientation property, and has a small elution amount of a water-soluble alkali metal, and to provide a method for producing the surface-modified iron-based oxide magnetic particle powder. The surface-modified iron-based oxide magnetic particle powder can be obtained by neutralizing a solution containing dissolved therein a trivalent iron ion and an ion of the metal, by which the part of Fe sites is to be substituted, with an alkali aqueous solution, so as to provide a precursor, coating a silicon oxide on the precursor, heating the precursor to provide e-type iron-based oxide magnetic powder, and adhering a hydroxide or a hydrous oxide of one kind or two kinds of Al and Y thereto.

Abstract: There is provided an oriented body containing platinum group-substituted-6 iron oxide particles typified by Rh-substituted ?-iron oxide or Ru-substituted ?-iron oxide applicable to MAMR, MIMR, or F-MIMR system, and a technique related thereto, containing platinum group element-substituted ?-iron oxide particles in which a part of ?-iron oxide is substituted with at least one element of platinum group elements, as magnetic particles wherein the degree of orientation of the magnetic particles defined by the degree of orientation=SQ (direction of magnetization easy-axes)/SQ (direction of magnetization hard-axes) exceeds 5.0, and a coercive force exceeds 31 kOe.

Abstract: There is provided an inexpensive silver particle dispersing solution being usable as a slurry for ink jet, a method for producing the same, and a method for producing a conductive film using the silver particle dispersing solution. In a silver particle dispersing solution containing a silver powder and a solvent, the silver powder has an average primary particle diameter (DSEM) of 0.15 to 0.5 ?m, and the ratio (D50/DSEM) of a particle diameter (D50), which corresponds to 50% of accumulation in volume-based cumulative distribution of the silver powder, to the average primary particle diameter (DSEM) is not less than 1.7, the silver powder having a fatty acid adhered to the surface thereof, and the solvent containing a monohydric higher alcohol having a carbon number of 6 to 12, butyl carbitol or butyl carbitol acetate as the main component thereof.