Abstract: The method of manufacturing an optical semiconductor device includes: a mounting step of placing an optical semiconductor chip on a package substrate made of ceramic; a storing step of storing the package substrate after the mounting step in a first dry atmosphere; a placing step of subjecting the optical semiconductor chip on the package substrate to a second dry atmosphere and placing a light transparent window on a joint portion of the package substrate with a joint material therebetween; and a sealing step of joining the joint portion and the light transparent window with the joint material in a low oxygen concentration atmosphere having an oxygen concentration of 1 vol % or less, thereby encapsulating the optical semiconductor chip in a confined space formed by the package substrate and the light transparent window.

Abstract: This disclosure relates to a fine silver particle dispersion comprising: (i) 60 to 95 wt. % of fine silver particles, wherein particle diameter (D50) of the fine silver particles is 50 to 300 nm, (ii) 4.5 to 39 wt. % of a solvent; and (iii) 0.1 to 3 wt. % of a resin, wherein the glass transition temperature (Tg) of the resin is 70 to 300° C., wherein the weight percentages are based on the weight of the fine silver particle dispersion.

Abstract: A silver powder which has a small content of carbon and which is difficult to be agglutinated, and a method for producing the same. While a molten metal, which is prepared by melting silver to which 40 ppm or more of copper is added, is allowed to drop, a high-pressure water is sprayed onto the molten metal to rapidly cool and solidify the molten metal to produce a silver powder which contains 40 ppm or more of copper, 0.1% by weight or less of carbon and 0.

Abstract: While a water reaction system containing silver ions is irradiated with ultrasonic waves to cause cavitation therein, a reducing agent containing solution, which contains an aldehyde as a reducing agent, is mixed with the water reaction system to deposit silver particles, the solid-liquid separation of which is carried out, and thereafter, the separated silver particles are washed and dried to produce a spherical silver powder which has a closed cavity in each particle thereof.

Abstract: Provided is a light-emitting element lamp capable of increasing a light extraction efficiency and its manufacturing method. The light-emitting element lamp according to the present invention includes: a light-emitting element having a semiconductor layer provided on a substrate; a first lens of spherical segment shape provided by protruding from a surface on the opposite side of the semiconductor layer of the substrate and having a spherical cap that includes a bottom surface consisting of an attaching surface to the surface and a protruding surface from the surface and a radius of curvature R1; and a second lens attached to the side of the light-emitting element and the protruding surface of the first lens, in which the second lens has a concave curve from a peripheral side of the bottom surface of the first lens to the semiconductor layer side on the side of the light-emitting element.

Abstract: There are provided a silver powder, which is able to form an electrically conductive film having a low resistance value even if the period of time for firing an electrically conductive paste is shorter than that for firing conventional electrically conductive pastes when the silver powder is used as the material of the electrically conductive paste, and a method for producing the same. A large-diameter silver powder, which has a crystalline size of 50 nm or less and which has a particle diameter (D50) of 1 ?m or more and 4 ?m or less, the particle diameter (D50) of the large-diameter silver powder being a particle diameter corresponding to 50% of accumulation in a particle size distribution of the large-diameter silver powder, is mixed with a small-diameter silver powder, which has a crystalline size of 50 nm or less and which has a particle diameter (D50) of 0.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.

Abstract: A silver powder mixture that is suitable for forming a conductive film on a surface of a member having stretchability, a method for producing the same, and a conductive paste using the silver powder mixture is provided. A silver powder mixture containing filamentous silver powder including spherical and filamentous parts and flaky silver powder having an average particle diameter of 1 ?m or more and 50 ?m or less and an aspect ratio, which is defined by a ratio of an average long diameter and an average thickness, of 1.5 or more is obtained by adding one kind or two or more kinds of a salt of copper and aluminum and ethylenediaminetetraacetic acid to a silver nitrate aqueous solution, for 60 seconds or more, and then adding a reducing agent containing one kind or two or more kinds of L-ascorbic acid, erythorbic acid, and salts thereof.

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 ?m and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 ?m·% (preferably 1.5 to 10.5 ?m·%).

Abstract: There are provided a silver powder, which is able to form an electrically conductive film having a lower resistance value than that of conventional electrically conductive films when the silver powder is used as the material of an electrically conductive paste which is fired to form the electrically conductive film, and a method for producing the same.

Abstract: Provided is a hexagonal ferrite magnetic powder for a magnetic recording medium, containing hexagonal ferrite magnetic particles having aluminum hydroxide adhered on the surface thereof, the hexagonal ferrite magnetic powder having an Al/Fe molar ratio of 0.030 to 0.200, a Co/Fe molar ratio of 0.002 to 0.030, and a Nb/Fe molar ratio of 0.005 to 0.050, and having an Fe site valence AFe of 3.015 to 3.040 as calculated by AFe=(3+2×[Co/Fe]+5×[Nb/Fe])/(1+[Co/Fe]+[Nb/Fe]) wherein [Co/Fe] represents the Co/Fe molar ratio and [Nb/Fe] represents the Nb/Fe molar ratio, and preferably having an activation volume Vact of 1400 to 1800 nm3. This magnetic powder simultaneously achieves an increase in magnetic characteristics including SNR of a magnetic recording medium and a further increase in durability thereof.

Abstract: [Problem] To provide a method for producing iron based oxide magnetic powder that has a narrow particle size distribution and a small content of fine particles that do not contribute to the magnetic recording characteristics, and consequently has a narrow coercive force distribution and is suitable for the enhancement of the recording density of the magnetic recording medium. [Solution] ?-Type iron based oxide magnetic powder is obtained by a wet method, then a tetraalkylammonium salt as a surface modifier is added to a slurry containing the magnetic powder to make a concentration of 0.009 mol/kg or more and 1.0 mol/kg or less, and simultaneously to make pH of 11 or more and 14 or less, and the slurry is subjected to a dispersion treatment and then classified, so as to provide iron based oxide magnetic powder having a narrow particle size distribution and a narrow coercive force distribution.

Abstract: A producing method of a solution that contains lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.3 mass % or less. The solution is suitable for forming a coating layer capable of improving battery characteristics of an active material in a battery.

Abstract: There is provided a spherical silver powder which is capable of being sintered at a lower temperature. The spherical silver powder of spherical silver particles has cavities, each of which is formed in a corresponding one of the spherical silver particles and each of which has a major axis of 100 to 1000 nm and a minor axis of 10 nm or more, the ratio of the major axis to the minor axis (major axis/minor axis) being 5 or more, the major axis being the length of the long side of a rectangle which has a minimum area and which circumscribes the outline of a cross-section of a corresponding one of the cavities on an image of the cross-section of the corresponding one of the silver particles exposed by polishing the surface of a resin after the silver powder is embedded in the resin, and the minor axis being the length of the narrow side of the rectangle.

Abstract: The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 ?m and 3.

Abstract: There are provided a magnetoplumbite-type hexagonal crystal ferrite magnetic powder which can be suitably used as the material of a radio wave absorber having an excellent radio wave absorbing power in the 76 GHz band, and a method for producing the same. In a method for producing a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, the method comprising the steps of: mixing powders of the raw materials of a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, which is expressed by a compositional formula of AFe(12-x)AlxO19 (A is at least one selected from the group consisting of Sr, Ba, Ca and Pb, x=1.0 to 2.

Abstract: Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 ?m as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.

Abstract: Disclosed is a deep ultraviolet light-emitting device which includes on a substrate 10 in order: an n-type semiconductor layer 30, a light-emitting layer 40, a p-type electron block layer 60, and a p-type contact layer 70, wherein the p-type contact layer 70 comprises a superlattice structure having an alternating stack of: a first layer 71 made of AlxGa1-xN having an Al composition ratio x higher than an Al composition ratio w0 of a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layer 72 made of AlyGa1-yN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030<z?w0<0.20 and the formula [2] 0.050?x?y?0.47.

Abstract: There is provided an electrically conductive paste which can prevent the increase of the volume resistivity of an electrically conductive film formed from the electrically conductive paste even if the electrically conductive film is heated to a soldering temperature of about 380° C. when the electrically conductive paste is a resin type electrically conductive paste using a silver powder and a silver-coated copper powder. In an electrically conductive paste containing a resin, a silver powder and a silver-coated copper powder having a copper powder, the surface of which is coated with a silver layer, the resin is an epoxy resin having a naphthalene skeleton, and there is added a dicarboxylic acid, preferably a dicarboxylic acid having a rational formula of HOOC—(CH2)n—COOH (n=1-8), and more preferably a dicarboxylic acid having a rational formula of HOOC—(CH2)n—COOH (n=4-7).

Abstract: An object of the present invention is to provide a magnetic powder having a narrow particle size distribution of epsilon-type iron oxide particles, and another object is to provide magnetic powder suitable for magnetic recording medium by improving particle size distribution, and provide epsilon-type iron oxide magnetic particles and related technologies in which a number average particle diameter of major diameters (D50) is 10 to 20 nm, a 90% cumulative particle diameter (D90) is 30 nm or less, and a geometric standard deviation (?g) of major diameters is 1.45 or less, which are obtained by TEM observation.