Abstract: The invention relates to image sensors, more particularly but not exclusively to scanning sensors with signal integration (or TDI sensors, for ‘Time Delay Integration linear sensors’). The adjacent pixels along a column each comprise an alternation of at least one photodiode and one storage gate adjacent to the photodiode. The gates comprise a main body and, on the upstream side in the direction of the transfer of the charges but not on the downstream side, a series of narrow fingers extending from the main body toward the upstream side, the ends of the fingers on the upstream side being adjacent to a photodiode situated upstream of the gate, the narrow fingers being separated from one another by doped isolating regions of the first type of conductivity, with a higher doping and preferably deeper than the surface regions, connected, as they are, to the reference potential of the active layer, these isolating regions being interposed between the main body of the gate and the photodiode.

Abstract: The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.

Abstract: The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.

Abstract: The invention relates to scanning linear image sensors with signal integration, in which an image of a line of points from an observed scene is reconstructed by the addition of successive images taken by a plurality of photosensitive lines which successively observe the same line of the scene as the scene moves across the sensor perpendicularly to the lines. The sensor according to the invention uses charge transfer pixels (Pm,i,j) grouped into M groups of N lines; an analog charge summation is carried out in each group; and the results of this summation are read by read circuits (READm) associated with each group, and then digitized and added to those of the other groups.

Abstract: A image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode, a charge storage node, an electron multiplication amplification structure, a unit for transferring electrons from the photodiode to the structure, a unit for transferring electrons from the amplification structure to the storage node after multiplication, a transistor for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations.

Abstract: An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp.

Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in TDI mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel. The pixels of like rank of the two lines each use a photodiode and a charge storage node with a transfer gate adjacent to the photodiode and to the storage node for transferring the charge accumulated in the photodiode to the charge storage node. The storage node is shared between the two pixels of like rank, and the charge of the two photodiodes is transferred successively into this node before the reading of the potential taken by the node. The time interval which separates the two charge transfers corresponds substantially to the time which separates the transit of an image line past the first line of pixels and then past the second.

Abstract: The invention relates to image sensors and more particularly those which are intended to capture images at low luminance levels. An active-pixel image sensor is provided, each pixel comprising, on the surface of a semiconductor active layer, a photodiode region adjacent a transfer gate itself adjacent a charge storage region, the transfer gate permitting, when it receives a transfer pulse, the transfer of charge from the photodiode region to the storage region. The photodiode region is adjacent an accelerating gate isolated from the semiconductor active layer. Switching means are provided so as to apply to the accelerating gate, during an integration phase preceding the transfer pulse, a series of high-potential/low-potential alternations inducing an electric field alternately in one direction and in the other direction between the photodiode region and the active layer region located beneath the accelerating gate.

Abstract: The invention relates notably to large-sized image sensors or image sensors with a large number of rows. Each column of pixels is organized in P superposed blocks. A row decoder organized as P identical decoders selects one row out of M in each of the P blocks. Each block is linked to one respective column conductor out of P column conductors. P read circuits CL1 to CL4 are placed at the foot of each column of pixels and each is connected to a respective column conductor. The signals from the P rows selected by the decoder can be extracted simultaneously or else they can be selected by a specific decoder which selects one read circuit out of the P read circuits of each column. The matrix can be produced by photolithography, by abutting identical matrix portions, for example P different portions corresponding to P identical regions ZB1 to ZB4.

Abstract: The invention relates to image sensors, more particularly but not exclusively to scanning sensors with signal integration (or TDI sensors, for ‘Time Delay Integration linear sensors’). The adjacent pixels along a column each comprise an alternation of at least one photodiode and one storage gate adjacent to the photodiode. The gates comprise a main body and, on the upstream side in the direction of the transfer of the charges but not on the downstream side, a series of narrow fingers extending from the main body toward the upstream side, the ends of the fingers on the upstream side being adjacent to a photodiode situated upstream of the gate, the narrow fingers being separated from one another by doped insulating regions of the first type of conductivity, with a higher doping and preferably deeper than the surface regions, connected, as they are, to the reference potential of the active layer, these insulating regions being interposed between the main body of the gate and the photodiode.

Abstract: The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode (PD1) associated with a charge storage region (N2) which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone (N2) at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which (N2b), adjacent to the reset gate (G3), is covered by a diffused region (P2) of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other (N2a) of which is not covered by such a region and is not adjacent to the reset gate.

Abstract: The invention relates to scanning linear image sensors with signal integration, in which an image of a line of points from an observed scene is reconstructed by the addition of successive images taken by a plurality of photosensitive lines which successively observe the same line of the scene as the scene moves across the sensor perpendicularly to the lines. The sensor according to the invention uses charge transfer pixels (Pm,i,j) grouped into M groups of N lines; an analog charge summation is carried out in each group; and the results of this summation are read by read circuits (READm) associated with each group, and then digitized and added to those of the other groups.

Abstract: The invention relates to an image sensor with N rows of P active photosensitive pixels using MOS technology. The sensor comprises digitizing circuits organized with N rows of P processing circuits, each processing circuit of row rank i and of column rank j comprising a respective sampler for carrying out a correlated double sampling of the signals present on a column conductor of rank j and corresponding to the observation of an image dot over the same integration time for all the rows, and an analog-digital conversion means in order to supply digital values of the analog signals sampled. The sensor is particularly suited to operating in TDI (image scanning and integration) mode.

Abstract: This description relates to active-pixel image sensors. Each pixel includes, at the surface of a semiconductor active layer, a photodiode region, a charge storage node and a transfer structure for transferring charges from the photodiode to the storage node after a charge integration time for charges generated by the light in the photodiode. The transfer structure includes a first transfer gate adjacent to the photodiode, a second transfer gate adjacent to the storage node, and an electron-multiplication amplifying structure located between the first and second transfer gates. The amplifying structure includes two separate accelerating gates and an intermediate diode region at a fixed surface potential, located between the two accelerating gates. A succession of alternating high and low potentials is applied to the accelerating gates while the charges are in transit in the transfer structure, before they are transferred to the storage node.

Abstract: The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.

Abstract: A image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode, a charge storage node, an electron multiplication amplification structure, a unit for transferring electrons from the photodiode to the structure, a unit for transferring electrons from the amplification structure to the storage node after multiplication, a transistor for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations.

Abstract: An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp.

Abstract: The invention relates to time-delay and signal-integration linear image sensors (or TDI sensors). According to the invention, a pixel comprises a succession of several insulated gates covering a semiconducting layer, the gates of one pixel being separated from one another and separated from the gates of an adjacent pixel of another line by narrow uncovered gaps of a gate and comprising a doped region of a second type of conductivity covered by a doped superficial region of the first type; the superficial regions are kept at one and the same reference potential; the width of the narrow gaps between adjacent gates is such that the internal potential of the region of the second type is modified in the whole width of the narrow gap when a gate sustains the alternations of potential necessary for the transfer of charges from one pixel to the following one.

Abstract: The invention relates to an integrated circuit comprising a succession of N identical elementary circuits (CE1, CE2, . . . CEN), juxtaposed in the order of their rank j varying from 1 to N, N being at least equal to 50, and all having to receive two reference potentials Vref and V0 supplied by two conductors. An upstream input of the second conductor is situated geographically on the side of the rank 1 of the succession of juxtaposed circuits, and an upstream input of the first conductor is situated geographically on the side of the rank N of the succession of juxtaposed circuits. This reduces the error in the potential difference applied to the elementary circuits all along the succession, an error that originates from the non-zero resistance of the conductors. The integrated circuit is applicable to analog-digital converters or digital-analog converters with high resolution.

Abstract: The invention relates to the attachment of a multiple-conductor electronic cable to an electronic circuit in a sealed housing. The cable is placed in a sheath of a heat-deformable material and the method comprises the following steps: placing a rigid bushing (40) with a protruding collar (48) on the exposed end of the cable, heating the end in a conical mold or softening the sheath, inserting the bushing between the cable conductors and the softened sheath, the collar of the bushing pushing the sheath material until the conical portion of the mold is filled, cooling the sheath for solidifying it, extracting the end of the cable from the mold, the end having a conical portion with an increasing diameter ending with the protruding collar, inserting the cable in the housing opening from the inside before closing the housing. The invention can be used or an intra-oral dental radiology sensor.