Abstract: Purge diffusers for use in systems for transporting substrates include: i) a purge diffuser core having an internal purge gas channel, one or more diffuser ports and an outer surface; ii) filter media secured to the outer surface of the purge diffuser core; and iii) a purge port connector for mounting the purge diffuser to a purge port of a substrate container for transporting substrates. The purge diffuser core may be a unitary article, may be formed by injection molding, and may include diverters internal to the internal purge gas channel.

Abstract: This disclosure reports embodiments of a fluid filter for ESD mitigation having a conductive polymer sleeve. Embodiments of this filter may include a conductive sleeve and tie bands to mitigate electrostatic discharge.

Abstract: Described herein is a polyamide hollow fiber membrane and methods of making and using the hollow fiber membrane. The polyamide hollow fiber membrane has an isopropanol permeability of from about 5 L/m2 h bar to about 150 L/m2 h bar and a particle rejection percentage of about 100% for particles having a nominal diameter of from about 1 nm to about 25 nm. The polyamide hollow fiber membranes described herein are particularly useful for photoresist filtration, for example.

Abstract: Described are porous polymeric membranes that include two opposing sides and that have a variable pore structure through a thickness of the membrane; filter components and filters that include this type of porous polymeric membrane; methods of making the membranes, filter components, and filters; and methods of using the polymeric filter membrane, filter component, or filter.

Abstract: The disclosure provides methodology for the synthesis of mono-alkylated cyclopentadiene structures, which can be obtained via fulvene intermediates. In one embodiment, the cyclopentadiene ring is substituted with a trialkylsilyl moiety, which enables the further reaction with certain metal halides to form metal adducts. For example, the monoalkyl cyclopentadienes substituted with a trimethylsilyl group can be reacted with TiCl4 to provide R*CpTiCl3 complexes, wherein R* is a group of the formula wherein R1 and R2 are as defined herein.

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

Abstract: A cap for a fluid container includes a main body, an actuator ring slidable along the main body and having an annular groove, and a plurality of latches having secure and release states and that may be placed in the release state by contact with the actuator ring. A closure system for a fluid container includes the cap, and a lip attached to a fluid container that is engaged by the latches of the cap. The lip may be integral with a fluid container or part of an adapter that is connected to the fluid container. A method of automated handling of a container includes engaging an annular groove of an actuator ring of a cap using a robotic arm, driving the actuator ring, and removing the cap from the container. The method may further include transporting the container via engagement of the robotic arm with the cap.

Abstract: A substrate container includes a container portion having an open side or bottom, and a door to sealingly close the open side or bottom, one of the door and the container portion defining access structure. The substrate container additionally includes a check-valve assembly, the check-valve assembly being retained with respect to the access structure to provide fluid communication with an interior of the substrate container. The check-valve assembly includes a grommet, the grommet being formed of an elastomeric material. A valve seat is disposed within the grommet, the valve seat being integrally formed with the grommet according to one aspect, and being formed of a separate piece according to another aspect. An elastomeric valve member, specifically an elastomeric umbrella valve member according to one aspect, is disposed within the grommet and held to engage the valve seat, thereby restricting fluid flow through the check-valve assembly with respect to the interior of the substrate container.

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

Abstract: Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Abstract: Described are bulk process gas purification systems and related methods, including systems that are adapted to use a volume of gas at an exterior surface of a vessel, e.g., a flow of the gas, to control a temperature of the vessel interior during a recharging step, during a cooling step that follows a recharging step, or both.

Abstract: The disclosure provides a process for preparing bis(monoalkyl-substituted cyclopentadiene) tungsten hydride compounds, for example bis(isopropylcyclopentadienyl)tungsten dihydride, via the corresponding magnesium compound and tungsten hexachloride, followed by treatment with a hydride reagent. Also provided is a process for preparing bis(monoalkyl-substituted cyclopentadiene) metal halide compounds. This latter aspect is achieved by reaction of the corresponding magnesium compound with a metal halide. Exemplary metals in this process include hafnium, zirconium, titanium, tantalum, niobium, tungsten, and molybdenum.

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

Abstract: A method of CMP includes providing a slurry solution including ?1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ?1 buffering agent which provides a buffering ratio ?1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Abstract: An aseptic low-temperature coupling assembly includes a first connector, a second connector, and a gasket disposed in the first or the second connector. The first and second connectors include a first retaining feature and a second retaining feature configured to couple together the first and the second connectors and align openings in the first and second connectors. The gasket is formed to have no substantial deformation after being cooled to at least ?50° C. then heated to ambient temperature. A method of aseptically connecting a low-temperature fluid storage container includes coupling a first connector to a second connector via first retaining features and second retaining features of the connectors. The coupling compresses a gasket between the first connector and the second connector and aligns an opening in the first connector with an opening in the second connector.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.