Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Embodiments provide a filter with a generally rectangular, non-cylindrical profile. The filter may have multiple pleat packs positioned between pleat covers that define regions and flow channels in a cavity of the filter body. The pleat covers have openings that allow a fluid to flow through the multiple pleat packs via parallel flows or series flows. End caps bonded to the body define flow passages for directing the fluid from an inlet to an outlet via the pleat packs for series or parallel filtration. The pleat packs may be made of the same or different materials and may be configured with the same or different heights based on flow requirements. A cage or a separator may be positioned between the pleat packs. The pleat packs may be made of a continuous pleated membrane with bridges defining a space between the pleat packs to accommodate the cage or separator.

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: A media sample holder includes a base and a plurality of retention assemblies including retaining tabs and opposing flexible release lever arms, configured to allow attachment of the base to an attachment adapter. The media sample holder can attach a media sample on or near a filter. The media sample holder held in the media sample holder can have a different removal efficiency curve than a removal efficiency curve of the filter. The media sample can be placed at or near the filter for a period of time, then tested to determine the status and/or life of the filter based on the relationship between the remaining life, exposure, or removal efficiency of the filter and the exposure or removal efficiency of the tested media sample.

Abstract: This disclosure relates generally to a containment system for containing a fluid. More specifically, the disclosure relates to a fitment for attaching a liner within a container and providing a fluid path from the liner to an outside of the containment system. The liner and at least a part of the fitment provide the wetted surfaces for the containment system, while the fitment has a portion that can be joined to an outer container that, for example, provides rigidity and light protection. The fitment may be a two-piece fitment with a liner fitment to which the liner may be joined, and a retainer that may be joined to a container, where the liner fitment and the retainer are joined to one another, for example by a mechanical connection. The liner and liner fitment may be fluoropolymers or other non-reactive polymers. The container and retainer may be UV-blocking polymers.

Abstract: A methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl4 in the presence of a reducing gas under process conditions.

Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

Abstract: A polysulfone membrane is modified so that monomers are wafted onto the surface of the membrane. The polysulfone membranes can be grafted by contacting the membrane with a grafting solution and exposing the membrane to electromagnetic radiation, typically within the ultraviolet portion of the spectrum. The monomers that are grafted are typically anionic or cationic. The grafted membranes can be used for filtering impurities, such as positively and negatively charged particles, from a liquid. Anionic membranes provide improved filtration of negatively charged impurities, while cationic membranes provide improved filtration of positively charged impurities.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Abstract: Purge diffusers for use in systems for transporting substrates include: i) a purge diffuser core having an internal purge gas channel, one or more diffuser ports and an outer surface; ii) filter media secured to the outer surface of the purge diffuser core; and iii) a purge port connector for mounting the purge diffuser to a purge port of a substrate container for transporting substrates. The purge diffuser core may be a unitary article, may be formed by injection molding, and may include diverters internal to the internal purge gas channel.

Abstract: A reticle pod includes an outer pod, an inner pod cover and an inner base plate. A reticle is supported on the base and is contained within the environment created by the inner pod cover and the inner pod base. The inner pod cover can include a plurality of reticle retainers configured to contact a side wall of the reticle and limit movement of the reticle in a horizontal direction.

Abstract: Wafer cushions for use in wafer carriers include spring beams that include a first arm extending from the frame of the wafer cushion in a first direction and a second arm extending from the first arm in a second direction, and a wafer contact at the end of the second arm opposite where the second arm is joined to the first arm. The wafer cushion may contact a substrate within the wafer carrier only at the wafer contacts during normal conditions. The substrate may also contact secondary contact points on the second arm when a shock event occurs. The wafer contact can be v-groove style wafer contact. The wafer contact may include a contact surface having a convex surface where it is configured to contact the wafer.

Abstract: Environmental control material holders can retain environmental control material within wafer carriers, allowing the environmental control material to protect wafers from moisture while also securing the environmental control material. The environmental control material holders may include a baseplate and tabs defining spaces to hold environmental control material, and can be configured to engage a handle of a wafer cassette. The environmental control material holders may retain one or more environmental control materials. Additionally, the environmental control material holders can be configured to also retain a humidity indicator.

Abstract: Described are molds that include a ceramic material at a surface, as well as methods of forming the molds, and methods of using the molds; the ceramic material is constituted substantially, mostly, or entirely of three elemental components designated M, A, and X; the “M” component is at least one transition metal; the “A” component is one or a combination of Si, Al, Ge, Pb, Sn, Ga, P, S, In, As, Tl, and Cd; and the “X” component is carbon, nitrogen, or a combination thereof.

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.

Abstract: A substrate container including a plate, a shell, a connector, and a seal, where the connector is threaded and secured via a nut, and the seal contacts each of the shell, plate, and connector. The plate has a recess accommodating an end of the connector and the nut. Field-serviceable, removable purge modules including check valves may be used with the substrate container, and may be secured to the substrate container in the recess in the plate. Filters may be secured to the connector or included in the purge modules. These filters may have diameters larger than an internal diameter of the connector.

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.