Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

Abstract: Filter cartridges and manifold blocks for filter manifold systems are described. The filter cartridges include flanges surrounding openings at first and second ends of the filter cartridge, with face seals in the flanges. Manifold blocks include end blocks, at least one of which is movable so that the distance between the end blocks can be changed. When a filter cartridge is installed into the manifold by engagement of the flanges with slots in the manifold end blocks, a fluid pathway is formed through a first manifold end block, into the filter cartridge, through the filter cartridge, out of the filter cartridge and into a second manifold end block. The fluid pathway is sealed by the face seals where the flow is from a manifold end block into or out of the filter cartridge.

Abstract: An overpack assembly and a method of making an overpack assembly, the overpack assembly includes a liner positioned within an overpack. In one embodiment, the method includes making a liner including providing a first sheet including a fitment positioned over a second sheet, the first sheet attached to the second sheet along an attachment seam at an entire perimeter edge. The first sheet is pulled apart from the second sheet at a center of the liner, forming a three-dimensional liner with triangular wings. A vertical seam is formed across each triangular wing, the vertical seam being perpendicular to the attachment seam, where a length of the vertical seam corresponds to the height of the liner when in use. The liner is positioned within the overpack.

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

Abstract: Described are methods, devices, and systems useful for removing gaseous ammonia from a gas mixture at a pressure in an ambient pressure range by allowing the ammonia to adsorb onto a solid adsorbent, as well as related systems and methods.

Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Described are filter materials including a polyol ligand, such as n-methylglucamine, and/or a polyphosphonic acid ligand, which are highly effective for filtering metals or metal ions from fluids. The filter materials can be particularly useful to filter basic and acidic fluid compositions, such as those used for wet etching, removing photoresist, and cleaning steps in microelectronic device manufacturing.

Abstract: Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.

Abstract: A method of selectively removing NiPt material from a microelectronic substrate, the method comprising contacting the NiPt material with an aqueous etching composition comprising: an oxidising agent; a strong acid; and a source of chloride.

Abstract: A high pressure filter including first and second housings having complimentary tapered surfaces, a gasket located between the tapered surfaces, a filter element centrally disposed within the housings, and a compression collar fitted over the second housing and threaded onto the first housing is provided. Methods of making and using high pressure filters are also provided.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

Abstract: Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

Abstract: Described are filter membranes coated with a polyamide, filters and filter cartridges that include the filter membranes, and methods of using and making the filter membranes.

Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.

Abstract: A door of a substrate container includes a latching mechanism for operating at least two latch members. The substrate container can be a front opening substrate container or a bottom opening substrate container. The latching mechanism can include a rotatable cam having a first rotational profile out of phase with a second rotational profile such that when the cam is rotated to operate the latch mechanism from the disengaged position to the engaged position, a first latch member engages a first corresponding slot in a door frame prior to a second latch member engaging a second corresponding opening provided in the door frame such that the latch members are operated in a staggered manner. This staggered latching configuration allows for the application of a load provided by the system to be used in the most efficient manner per latch arm or per set of latch arms.

Abstract: Described are multi-layer coatings, substrates (i.e., articles) coated with a multi-layer coating, and methods of preparing a multi-layer coating by atomic layer deposition, wherein the coating includes layers alumina and yttria.

Abstract: A fluid circuit (160) defining a flow path for a fluid from a fluid supply (152) toward a process stage (156). The fluid circuit may include a plurality of operative components (168) including a body portion (182) and a plurality of tubing connector fittings (186). The operative components may be connected by a plurality of tubing segments (164). Each body portion may include a non-conductive fluoropolymer portion and an outer conductor (234) that extends between each of the plurality of tubing connector fittings and that is unitary with the non-conductive fluoropolymer portion. The plurality of tubing segments may include a non-conductive fluoropolymer tubing portion (187) and an axial strip (188) of conductive polymer. The outer conductor of each body portion conductively connected with tubing segments connected thereto.