Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: A method for increasing the specific surface area of titanium phosphate plate-shaped particles of this invention includes: obtaining a liquid in a state where a powder containing titanium phosphate plate-shaped particles is dispersed in an aqueous alkaline solution.

Abstract: To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica. Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

Abstract: Provided herein are compositions comprising a first colloidal silica particle that is not surface-modified and a second colloidal silica particle that is surface modified to carry a negative charge. Also provided herein are methods for selectively removing HfO2 or SiO2 from a surface.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: The present disclosure provides a ceramic powder having low bulkiness and good dispersibility. In the ceramic powder, the volume ratio of aggregated particles having a particle diameter larger than a reference particle diameter is 35 vol. % or more and the volume ratio when ultrasonic dispersion treatment for 10 minutes at an oscillation frequency of 19.5 kHz and an output power of 10 W is applied is 4 vol. % or less. The reference particle diameter is a particle diameter equivalent to a cumulative 0.1 vol. % diameter from the large diameter side when the ceramic powder is subjected to ultrasonic dispersion treatment for 3 minutes at an oscillation frequency of 19.5 kHz and an output power of 150 W.

Abstract: A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.

Abstract: To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica. Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

Abstract: To provide a polishing composition suitable for the use of polishing a polishing object having a film containing a silicon material having a silicon-silicon bond formed on a pattern containing an insulating film by a CMP method to form circuit patterns containing the silicon material and capable of also suppressing a remarkable reduction in polishing removal rate. A polishing composition of this invention contains abrasives, a first water-soluble polymer containing a polymer compound containing a lactam ring and having a weight average molecular weight of less than 300,000, a second water-soluble polymer containing a polymer compound containing a lactam ring and having a weight average molecular weight smaller than that of the first water-soluble polymer, a basic compound, and water.

Abstract: Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm2 or more and 600 ng/cm2 or less per unit area of the quartz crystal microbalance electrode.

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

Abstract: There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.

Abstract: Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of more than 40 mass % at a high polishing speed. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of more than 40 mass %, the polishing composition containing a cationically modified silica, a polyalkylene glycol, and an acid.

Abstract: The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less.

Abstract: Provided are a polishing composition capable of effectively reducing or eliminating a step difference on a surface of an object to be polished consisting of a single material, a method of using such a polishing composition, and a method of producing a substrate. The polishing composition of the present invention contains an abrasive grain, a pH adjusting agent, a dispersing medium, and at least one kind of first water-soluble polymer having a lactam structure and at least one kind of second water-soluble polymer containing an alkylene oxide represented by the following Formula (I) in the structure, CxH2xOn??(I) (in the Formula (I), X is an integer of 3 or more and n is an integer of 2 or more.).

Abstract: There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects. A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

Abstract: Provided is a method for filtering an additive-containing liquid that can achieve a polishing composition exhibiting excellent defect reducing capability while maintaining a practical filter life. The method for filtering a polishing additive-containing liquid provided by the present invention includes the step of: filtering the polishing additive-containing liquid with a filter that satisfies the following conditions (1) and (2). (1) The average pore diameter P measured by a palm porometer is 0.15 ?m or less. (2) The pore diameter gradient (Sin/Sout), which is the ratio of the inlet-side average pore diameter (SO to the outlet-side average pore diameter (Sout), both diameters being measured through observation with an SEM, is 3 or less.

Abstract: A molding material is provided which, despite containing a ceramic, enables efficient molding for producing high-density molded articles. The present invention provides a molding material to be used in powder laminate molding. This molding material contains a first powder which contains a ceramic, and a second powder which contains a metal. Further, the first powder and the second powder configure granulated particles. Ideally, the ratio of the content of the second powder to the total content of the first powder and the second powder is greater than 10 mass % and less than 90 mass %.

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.