Abstract: A spot on a layer of a 2D semiconductor material deposited on a substrate is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source used to irradiate the sample. The relation is recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This relation is fitted to a model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this process, the trap density within the bandgap is derived.

Abstract: A silicon-based photonic chip is provided that includes an interface for optically coupling the photonic chip to an optical fiber or an optical fiber assembly. The interface includes: a single-mode waveguide configured to guide light and to provide a first light beam; a first optical element configured to expand the light beam in a first direction in-plane of the photonic chip, thereby providing an expanded light beam; and a second optical element configured to deflect and to further expand the expanded light beam in a second direction, thereby providing an output light beam from the photonic chip. Also provided are methods for fabricating such a photonic chip.

Abstract: The disclosure relates to a computer-implemented method and control system for controlling provisioning of a service in a network. A network function specification data structure of a network function of the service is obtained, wherein the network function specification data structure is associated with at least a first network function implementation, e.g. a physical network function implementation, and a second network function implementation, e.g. a virtual network function implementation, for performing the network function of the service. Network service provisioning is controlled comprising selecting the first network function implementation or the second network function implementation of the network function in the network function specification data structure.

Abstract: A light-to-digital converter (2) comprises a light-to-current converter (10); a current integrator (4) with an integrator output (30) resettable to a baseline level; and a counter (18) with a digital output (26), wherein the light-to-current converter (10) is switchably connectable as a positive integration input to the current integrator (4), for, during a light-collecting phase (404-406), integrating a current from the light-to-current converter (10), the integrator output (30) starting from the baseline value and ending at a value to be digitized; a reference current source (14) is switchably connectable as a negative integration input to the current integrator (4), for, during a counting phase (406-408) subsequent to the light-collecting phase (404-406), integrating a reference current from the reference current source (14), the integrator output (30) starting from the value to be digitized and ending at the baseline value, the time spent integrating the reference current corresponding to the value to be

Abstract: In a first aspect, the present disclosure relates to a method for forming a contact isolation for a semiconductor device, comprising: providing a semiconductor structure comprising a trench exposing a contact thereunder, filling a bottom of the trench with a sacrificial material, infiltrating the sacrificial material with a ceramic material, and removing the sacrificial material.

Abstract: An interconnect for connecting a first electronic circuit to a second, external stretchable electronic circuit device comprises: conductive lines of the first electronic circuit arranged in a plane; connectors configured to define an overlap in the plane between each end of the conductive lines with a corresponding end of stretchable conductive lines providing an electrical connection between the conductive lines and the stretchable conductive lines over the entire overlap; and at least one anchoring structure for providing an anchoring of the first electronic circuit with the second, external stretchable electronic circuit device, wherein the at least one anchoring structure provides anchoring transverse to the plane in anchoring positions on opposite sides of the overlap.

Abstract: A system for providing distributed communication with respect to a user equipment is provided. The system includes multiple communication units for distributing the communication with respect to the user equipment, a communication management unit connected to at least a pan of the multiple communication units in a connection line for managing the distributed communication, a connection unit including loss-inserting properties for connecting the multiple communication units to the connection line, an amplifying unit for being arranged with respect to the connection units, and a scheduling unit. The scheduling unit is configured to determine power loss with respect to the units on the basis of the corresponding loss-inserting properties and/or to schedule at least one of the multiple communication units and/or the at least one amplifying unit m order to compensate for power loss with respect to the at least one connection unit.

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.

Abstract: A system and for distributing data for 3D light field projection and a method thereof. The system comprises input terminals and output terminals that are connectable to pixel elements of a display. Data paths are established between input terminals and output terminals, and are controlled by data switches. The system also comprises a control plane adapted for applying control variables to the data switches. Control switches of the control plane select the control variables which are applied to the data switches. Sequences of control variables and enable variables propagate along at least one first delay line and along at least one second delay line, respectively. Delay units of the at least one first delay line and of the at least one second delay line have a synchronous relationship. During system run-time patterns contained in the stream of input data are detected for determining the sequences of control variables.

Abstract: According to an aspect there is provided a memory cell. The memory cell comprises: a first and a second electrode; a spin-orbit-torque, SOT, layer comprising a first and a second electrode contact portion arranged in contact with the first and the second electrode, respectively, and an intermediate portion between the first and second electrode contact portions; a first magnetic tunnel junction, MTJ, layer stack arranged in contact with the intermediate portion; and a second MTJ layer stack arranged in contact with the second electrode contact portion and directly above the second electrode. A memory device comprising such a memory cell and a method for writing to such a memory cell are also provided.

Abstract: The inventive concept relates to a collector for collecting particles in air and a device for detecting particles in air comprising said collector. Said collector comprises a substrate, which is adapted to enable imaging of the particles, an adhesive layer arranged on a collector side of the substrate, said adhesive layer being formed by an adhesive material. The collector further comprises a protection element, which is configured to protect the adhesive layer before collection of particles. The collector is configured to allow release of protection of the adhesive layer by the protection element to expose an adhesive surface of the adhesive layer to ambient air for collecting particles on the adhesive surface. The collector is further configured for presenting a particle sample carrier having a smooth top surface and a smooth bottom surface for preventing light from being diffusely scattered by the particle sample carrier.

Abstract: The material layer stack includes first and second magnetic tunnel junctions and a first top electrode formed on a top face of the stack. A shoulder is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion. A tunnel barrier of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier of the second magnetic tunnel junction by the upper stack portion. A second top electrode is formed on the shoulder. Each magnetic tunnel junction is adapted to store a bit as a reconfigurable magnetoresistance of its magnetic electrodes. Preferably, a bottom face of the stack is connected to a conductor supporting current induced magnetic polarization switching for the first magnetic tunnel junction by spin-orbit torque. Magnetic polarization switching for the second magnetic tunnel junction is preferably achieved by spin-transfer torque.

Abstract: At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.

Abstract: An integrated photonic device for wavelength division multiplexing comprises: a wavelength-splitting/combining component configured to be re-used for both splitting a single signal to be split, wherein the signal to be split comprises plural wavelengths, to plural split signals, wherein each of the plural split signals is related to a unique wavelength band, and combining plural signals to be combined, wherein each of the plural signals to be combined is related to a unique wavelength band, to a single combined signal, wherein the wavelength-splitting/combining component comprises at least one output channel for providing an output signal and at least one response channel for receiving a response input signal from a light interaction induced by the output signal, wherein the output channel and the response channel are connected to different ports of the wavelength-splitting/combining component.

Abstract: A method for partially filling a space between two superimposed structures in a semiconductor device under construction is provided. The method includes the steps of: (a) providing the two superimposed structures having said space therebetween; (b) entirely filling said space with a thermoplastic material; (c) removing a first portion of the thermoplastic material present in the space, the first portion comprising at least part of a top surface of the thermoplastic material, thereby leaving in said space a remaining thermoplastic material having a height; and (d) heating up the remaining photosensitive thermoplastic material so as to reduce its height. A replacement metal gate process for forming a different gate stack on two superimposed transistor channels in a semiconductor device under construction as well as a semiconductor device under construction is also provided.

Abstract: A method for applying thin film material onto a substrate comprises: forming microdroplets of a solvent and a solute material forming the thin film material; depositing the microdroplets on an upper surface of a micro-structured mesh, wherein the microdroplets are deposited to allow coalescing into droplets extending into the micro-structured mesh; and arranging a surface of the substrate in close relation to a bottom surface of the micro-structured mesh such that a capillary force draws liquid of the droplets onto the surface of the substrate, whereby forced dynamic wetting of the surface of the substrate is provided to form a liquid film on the surface of the substrate.

Abstract: Example embodiments relate to integrated circuits with 3D partitioning. One embodiment includes an integrated circuit. The integrated circuit includes a first integrated circuit layer that includes processing cores. The integrated circuit also includes a second integrated circuit layer that includes memory arrays associated with processing cores. Additionally, the integrated circuit includes an intermediate integrated circuit layer interconnected with the first and second integrated circuit layers and including memory control logic and interface circuitries for managing data exchange between the processing cores and the memory arrays.

Abstract: A circuit for optoelectronic down-conversion of a terahertz, THz, signal comprises a first photodiode and a second photodiode configured to be excited by an optical beat signal. The photodiodes are coupled in series through a common antenna. The terminals of the antenna are coupled to form an output terminal and the antenna is configured to receive the terahertz, THz, signal. The photodiodes thereby, via the optical beat signal, respectively, down-convert the THz signal and generate a current comprising an intermediate frequency, IF, component and a direct current, DC, component. The respective generated currents are summed at the output terminal, thereby obtaining the IF components and cancelling the DC components.

Abstract: A method of bonding semiconductor components is described. In one aspect a first component, for example a semiconductor die, is bonded to a second component, for example a semiconductor wafer or another die, by direct metal-metal bonds between metal bumps on one component and corresponding bumps or contact pads on the other component. In addition, a number of solder bumps are provided on one of the components, and corresponding contact areas on the other component, and fast solidified solder connections are established between the solder bumps and the corresponding contact areas, without realizing the metal-metal bonds. The latter metal-metal bonds are established in a heating step performed after the soldering step. This enables a fast bonding process applied to multiple dies bonded on different areas of the wafer and/or stacked one on top of the other, followed by a single heating step for realizing metal-metal bonds between the respective dies and the wafer or between multiple stacked dies.

Abstract: The disclosed technology relates generally to the field of magnetic devices, in particular to magnetic memory devices or logic devices. The disclosed technology presents a magnetic structure for a magnetic device, wherein the magnetic structure comprises a magnetic reference layer (RL); a spacer provided on the magnetic RL, the spacer comprising a first texture breaking layer provided on the magnetic RL, a magnetic bridge layer provided on the first texture breaking layer, and a second texture breaking layer provided on the magnetic bridge layer. Further, the magnetic structure comprising a magnetic pinned layer (PL) or hard layer (HL) provided on the spacer, wherein the magnetic RL and the magnetic PL or HL are magnetically coupled across the spacer through direct exchange interaction.