Patents Assigned to Infineon Technologies
  • Patent number: 11955064
    Abstract: A system may include a set of light-emitting diode (LED) circuits, wherein each LED circuit of the set of LED circuits comprises: a first electrode; a set of second electrodes; and a set of pixels, wherein each pixel of the set of pixels corresponds to a combination of the first electrode and a respective second electrode of the set of second electrodes. A plurality of pixels may include the set of pixels corresponding to each LED circuit of the set of LED circuits. The first electrode may be located within a center portion of the respective LED circuit, and each second electrode of the set of second electrodes may be located within an outer portion the respective LED circuit. The system also includes a controller circuit configured to control whether each pixel of the plurality of pixels is activated or deactivated.
    Type: Grant
    Filed: October 12, 2022
    Date of Patent: April 9, 2024
    Assignee: Infineon Technologies AG
    Inventor: Dietrich Bonart
  • Patent number: 11953971
    Abstract: Disclosed is a method and a control circuit. The method includes operating a buffer circuit in a first operating mode or a second operating mode. Operating the buffer circuit in the first operating mode includes buffering, by a first capacitor of the buffer circuit, power provided by a power source and received by a load. Operating the buffer circuit in the second operating mode includes connecting a second capacitor in series with the first capacitor to form a capacitor series circuit, supplying power to the load by the capacitor series circuit, and regulating a first voltage across the capacitor series circuit. Regulating the first voltage includes transferring charge from the first capacitor to the second capacitor.
    Type: Grant
    Filed: June 8, 2022
    Date of Patent: April 9, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Manuel Escudero Rodriguez, David Meneses Herrera, Matteo-Alessandro Kutschak
  • Patent number: 11955415
    Abstract: The semiconductor device package comprises a die carrier, at least one semiconductor die disposed on the carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier, an encapsulant disposed above the semiconductor die, an electrical connector electrically connected with the contact pad, a drilling screw screwed through the encapsulant and connected with the electrical connector.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: April 9, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Thorsten Scharf, Thomas Bemmerl, Martin Gruber, Thorsten Meyer, Frank Singer
  • Patent number: 11954206
    Abstract: Systems, methods, and devices securely boot processors and nonvolatile memories. Methods include implementing, using a controller of a secured nonvolatile memory, a validation operation on a first portion of code stored in a first secured storage region of the secured nonvolatile memory, the validation operation comprising computing a validation value. Methods also include retrieving a second portion of code from a second secured storage region, the second portion of code comprising a pre-computed validation value, the first and second portion of code being associated with booting a processor, and implementing a comparison operation of the validation value and the pre-computed validation value. Methods further include generating, using the controller, a signal based on a result of the comparison operation, the signal being provided to the processor via an interface of the secured nonvolatile memory, and the signal enabling booting of the processor in response to a matching comparison operation.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: April 9, 2024
    Assignee: Infineon Technologies LLC
    Inventors: Sandeep Krishnegowda, Zhi Feng
  • Patent number: 11947034
    Abstract: A method for calibrating a receiving (Rx) channel of a frequency-modulated continuous-wave (FMCW) radar system includes: setting the Rx channel in calibration mode, where the Rx channel includes a mixer, a phase shifter coupled to a first input of the mixer, a filter coupled to an output of the mixer, and an analog-to-digital converter (ADC) coupled to an output of the filter; setting a value for a phase shifter control word of the phase shifter; sending a chirp signal to the phase shifter; sending a modulated chirp signal to a second input of the mixer, where an output signal at the output of the mixer includes a beat signal; and forming an amplitude curve based on data samples from the ADC, where the amplitude curve illustrates amplitudes of the beat signal at a plurality of frequencies within an operating frequency band of the FMCW radar system.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: April 2, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Matthias Brandl
  • Patent number: 11946772
    Abstract: The concept described herein relates to a device and a method for determining the transfer function of an angle sensor in the course of operation. For this purpose, a sequence of angle output signals of the angle sensor is received during at least one time interval in which the angle sensor is exposed to a rotating magnetic field. Furthermore, the transfer function of the angle sensor is determined on the basis of the sequence of angle output signals. The method can be carried out during regular operation of the angle sensor.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies AG
    Inventor: Benjamin Kollmitzer
  • Patent number: 11946963
    Abstract: A controller circuit is configured to receive, from a first device, a first node voltage measured at a first node by the first device at a first time when a first current flows between the first node and a second node and receive, from a second device, a second node voltage measured at a second node by the second device at a second time when a second current flows between the first node and the second node, wherein the first time is different from the second time. The controller circuit is further configured to, responsive to a determination that the first current corresponds to the second current, calculate, using the first node voltage and the second node voltage, a resistance value for one or more electrical components electrically connecting the first node and the second node.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies AG
    Inventors: Andre Mourrier, Vincent Usseglio
  • Patent number: 11948912
    Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.
    Type: Grant
    Filed: February 1, 2023
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies AG
    Inventors: Alfred Sigl, Alexander Frey
  • Patent number: 11949009
    Abstract: This application relates to semiconductor die including: a transistor device formed in an active area of a semiconductor body and having a channel region, a gate region, and a field electrode region, the gate region arranged laterally aside the channel region and having a gate electrode for controlling a current flow in the channel region, the gate electrode formed in a gate trench extending into the semiconductor body; and an additional device formed in an additional device area of the semiconductor body. A recess extends into the semiconductor body in the additional device area, and a semiconductor material is arranged in the recess in which the additional device is formed.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Stanislav Vitanov, Jyotshna Bhandari, Georg Ehrentraut, Christian Ranacher
  • Patent number: 11949006
    Abstract: A power semiconductor device includes: first and second trenches extending from a surface of a semiconductor body along a vertical direction and laterally confining a mesa region along a first lateral direction; source and body regions in the mesa region electrically connected to a first load terminal; and a first insulation layer having a plurality of insulation blocks, two of which laterally confine a contact hole. The first load terminal extends into the contact hole to contact the source and body regions at the mesa region surface. A first insulation block laterally overlaps with the first trench. A second insulation block laterally overlaps with the second trench. The first insulation block has a first lateral concentration profile of a first implantation material of the source region along the first lateral direction that is different from a corresponding second lateral concentration profile for the second insulation block.
    Type: Grant
    Filed: May 20, 2021
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies Dresden GmbH & Co. KG
    Inventors: Markus Beninger-Bina, Matteo Dainese, Ingo Dirnstorfer, Erich Griebl, Johannes Georg Laven, Anton Mauder, Hans-Joachim Schulze
  • Patent number: 11945451
    Abstract: An electronic anomaly detection unit for use in a vehicle includes an input component for capturing an input variable, wherein the input variable contains state information for at least one component of the vehicle, a memory component for storing state values based on the input variable, a selection component for selecting selected state values from the stored state values, an association component for associating the selected state values with predefined values, wherein the predefined values define a normal state of the component of the vehicle, and a decision component for deciding whether there is an anomalous behavior in the at least one component of the vehicle, based on the association, wherein one or more of the input component, the memory component, the selection component, the association component and the decision component are implemented in hardware.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies AG
    Inventors: Alexander Zeh, Harald Zweck
  • Patent number: 11945266
    Abstract: A system for estimating a tire load of a tire includes a pressure sensor configured to generate a tire pressure signal; an acceleration sensor configured to generate a tire acceleration signal; a temperature sensor configured to generate a tire temperature signal; and at least one processor configured to calculate a duration of a contact patch based on the tire acceleration signal, calculate a vehicle speed based on the tire acceleration signal, determine at least one system model coefficient based on the tire pressure signal and the tire temperature signal, and calculate the tire load of the tire using a linear system model that relates tire pressure, the duration of the contact patch, and the vehicle speed to the tire load of the tire, where the linear system model further includes the at least one system model coefficient for calculating the tire load of the tire.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies AG
    Inventor: Christoph Steiner
  • Patent number: 11948802
    Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies Dresden GmbH & Co. KG
    Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
  • Publication number: 20240105678
    Abstract: A chip package is provided. The chip package includes an electrically conductive carrier structure, a first power chip on the carrier structure having a control contact pad and a second power chip on the carrier structure having a control contact pad. The first and second power chips are arranged with their respective control contact pad facing a redistribution layer. A logic chip is arranged with a logic contact pad facing a redistribution layer, wherein the redistribution layer connects the logic contact pad with the respective control pads of the power chips.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 28, 2024
    Applicant: Infineon Technologies AG
    Inventors: Thorsten MEYER, Angela KESSLER, Thorsten SCHARF
  • Publication number: 20240105544
    Abstract: A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on or above the carrier, an electrically insulating and thermally conductive layer on at least part of an upper main surface of the electronic component, and a metal block on the electrically insulating and thermally conductive layer. An encapsulant at least partially encapsulates the electronic component, the carrier, the electrically insulating and thermally conductive layer and the metal block so that an upper main surface of the metal block is exposed beyond the encapsulant.
    Type: Application
    Filed: September 8, 2023
    Publication date: March 28, 2024
    Applicant: Infineon Technologies AG
    Inventors: Shih Kien LONG, Chee Pin HAW
  • Publication number: 20240107771
    Abstract: A fabrication method of a semiconductor device is described. Generally, the method includes forming a customizable oxide-nitride-oxide (ONO) stack over a substrate in an in-situ atomic layer deposition (ALD) tool or chamber. Radical oxidation or oxide deposition process steps are performed to form tunnel dielectric layer overlying the substrate. Silicon nitride deposition process steps are also performed to form a multi-layer charge trapping (CT) layer in which at least some of the process parameters of silicon nitride deposition process steps are adjusted when forming the first and second CT sub-layers of the multi-layer CT layer. Subsequently, radical oxidation or oxide deposition process steps are performed in the ALD tool to form a blocking dielectric layer overlying the multi-layer CT layer.
    Type: Application
    Filed: September 27, 2022
    Publication date: March 28, 2024
    Applicant: Infineon Technologies LLC
    Inventors: Michael ALLEN, Krishnaswamy RAMKUMAR
  • Patent number: 11943592
    Abstract: A single-ended to differential converter includes a converter input, a first converter output, a second converter output, and an internal node, wherein the first converter output and the second converter output comprise a differential output; a non-inverting amplifier having an input coupled to the converter input, and an output coupled to the first converter output; an inverting amplifier having an input coupled to the first converter output, and an output coupled to the second converter output; a charge pump having a charge pump output capacitor coupled between the second converter output and the internal node; and a feedback capacitor coupled between the first converter output and the internal node.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: March 26, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Jose Luis Ceballos, Hong Chen, Fulvio CiCiotti, Andreas Wiesbauer
  • Patent number: 11940554
    Abstract: An automotive radar arrangement includes a radar receiver configured to generate radar reception data from radio signals received by a plurality of radar receive antennas. A radar signal processor is configured to determine an estimate of an angular position of at least one object by processing the radar reception data. A communication interface is configured to receive information about a reference angular position of the at least one object. A determiner is configured to determine a compensation for the radar reception data based on the estimate of the angular position and the reference angular position of the at least one object. The radar signal processor is configured to correct the radar reception data and/or further radar reception data for the detection of a further object based on the compensation. An output interface is configured to provide information about the presence of the further object to a vehicle controller.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: March 26, 2024
    Assignee: Infineon Technologies AG
    Inventors: Andre Roger, Simon Achatz, Dian Tresna Nugraha
  • Patent number: 11940489
    Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.
    Type: Grant
    Filed: October 15, 2021
    Date of Patent: March 26, 2024
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Maximilian Wolfgang Feil, Andre Kabakow, Hans Reisinger
  • Patent number: 11942383
    Abstract: A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.
    Type: Grant
    Filed: October 14, 2021
    Date of Patent: March 26, 2024
    Assignee: Infineon Technologies AG
    Inventors: Edward Fuergut, Chii Shang Hong, Teck Sim Lee, Ralf Otremba, Daniel Pedone, Bernd Schmoelzer