Abstract: An ultrasonic transducer has a rectangular piezo-electric ceramic sheet piece 2 which has a retracted portion 1 on a side face, an upper electrode layer 3 placed on an upper surface of the ceramic sheet piece, 4 a first terminal electrode that is placed on the upper surface of the ceramic sheet piece and connected to the upper electrode layer 3, a lower electrode layer 5 placed on the lower surface of the ceramic sheet piece, an electro-conductive layer 6 that is placed on the retracted side face 1 and connected to the lower electrode layer 5, a second terminal electrode 7 that is placed on the upper surface of the ceramic sheet piece and is connected to the electro-conductive layer 6, a first lead wire 9a connected to the first terminal electrode, a second lead wire 9b connected to the second terminal electrode 7, an acoustic matching layer 10 placed on the upper electrode layer, and an acoustic absorbing layer 11 placed on the surface of the lower electrode layer.

Abstract: A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.

Abstract: A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer 2, n+-type contact layer 3, n-type semiconductor layer 5, p-type channel layer 7, p+-type contact layer 8 are laminated on a substrate 1 to form a semiconductor laminate portion 10. A portion of the semiconductor laminate portion 10 is removed by etching to expose the n+-type contact layer 3 and gate electrode 13 of a junction p-channel FET 22 is formed on the surface of the exposed n+-type contact layer 3. A protective element 23 is formed by a portion of the semiconductor 10.

Abstract: A highly-reliable electronic frequency tuning magnetron comprises an anode for forming a resonant cavity which is segmented into a plurality of spaces in an inner periphery side of a cylindrical anode shell, a cathode provided at the center of the anode shell along its cylindrical axial direction and an exhausted structure having a coaxial central conductor which is connected to the inside of the cavity of the anode shell and is coupled thereto in a high-frequency manner, wherein the coaxial central conductor is externally led through a wall of the exhausted structure via a through-hole and the through-hole is covered by a dielectric portion placed between an external conductor for constituting the coaxial central conductor and the central conductor, wherein a portion of the led coaxial central conductor is conductively connected to a switching element.

Abstract: There is provided a time-division duplex transmit-receive apparatus in which the respective amplitude and phase characteristics of N sets of transmitting unit-receiving unit pair connected with N antenna elements are corrected all together and at the same time. At the time of reception, the reference signal from reference signal generator is branched into N reference signals. The branched reference signal is applied to the reception system through the transmit-receive switching switch. The reception-side error detector detects the error between the output signal of the reception-side amplitude-phase correction circuit and the reference signal to control the reception-side amplitude-phase correction circuit so that the error becomes zero. At the time of transmission, a part of transmitting signal is applied to the reception system through the antenna path.

Abstract: A plurality of capacitor cells (10) are layered to form a cell group. On the top of each capacitor cell (10), a pair of electrode plates (10b) is formed to protrude upward. The adjacent electrode plates (10b) are connected to each other. A connection piece (20) protruding upward is attached to each of the electrode plates (10b). The connection piece (20) is connected to a circuit substrate (30). Thus, it is possible to effectively make a connection between the cell group of the capacitor cells (10) and the circuit substrate (30).

Abstract: A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.

Abstract: A mobile body-mounted communication device mounted in a mobile body such as a vehicle and making difficult the long-time tracking of the moving path of the mobile body. The mobile body-mounted communication device mounted in a mobile body and used for transmitting/receiving packet information is characterized by comprising a borrowing address acquiring section for acquiring lending addresses as borrowed addresses from an address management device managing lending addresses, a borrowing time information acquiring section for acquiring information representing predetermined times during which the borrowing addresses can be used from the address management device, and a transmitting section for transmitting packet information including information on a borrowing address out of the borrowing addresses and the mobile body during the predetermined borrowing times determined for the borrowing addresses.

Abstract: A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.

Abstract: A semiconductor photodetector which can obtain spectral sensitivity characteristics close to relative luminous characteristics compared to a conventional semiconductor photodetector is obtained at low cost. The semiconductor photodetector includes a semiconductor light receiving element having high spectral sensitivity in wavelengths in a range from approximately 400 nm to 1,100 nm and an optical transmitting resin where micro particles is dispersed in a transparent resin with an amount which can be obtain photocurrent from the semiconductor light receiving element by transmitting light in wavelengths in the visible light region while blocking light in wavelengths in the infrared region. The semiconductor photodetector further includes a converging structure on a light receiving surface of the semiconductor photodetector.

Abstract: A method for processing sound signal including an L side enhanced difference signal comprising a sum of a signal being removed low frequency component from L?R signal and an L+R signal, an R side enhanced difference signal comprising a sum of a signal being removed low frequency component from R?L signal and an R+L signal, an L side output signal comprising a subtraction of signals, in which said R side enhanced difference signal being delayed to remove low and high ranges and amplified by a predetermined amplifying rate for a purpose of cross cancellation talk is subtracted from said L side enhanced difference signal and an R side output signal comprising a subtraction of signals, in which said L side enhanced difference signal being delayed to remove low and high ranges and amplified by a predetermined amplifying rate for a purpose of cross cancellation talk is subtracted from said R side enhanced difference signal.

Abstract: A nitride semiconductor device including an ohmic electrode with low contact resistance and manufacturing method thereof including a first nitride semiconductor layer made of a III-V group nitride semiconductor layer deposited on a substrate, a second nitride semiconductor layer including the III-V group nitride semiconductor layer whose film formation temperature is lower than that of the first nitride semiconductor layer and being deposited on the first nitride semiconductor layer and not including aluminum. An ohmic electrode is then formed through forming a metal pattern making ohmic contact on the second nitride semiconductor layer being unprocessed crystallinity with minute grains, and then heat treating the metal pattern.

Abstract: A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum, boron and indium and V Group element consisting of at least nitrogen among a group consisting of nitrogen, phosphorus and arsenic, including a first nitride semiconductor layer including the III-V Group nitride semiconductor layer being deposited on a substrate, a second nitride semiconductor layer including the III-V Group nitride semiconductor layer being deposited on the first nitride semiconductor and not containing aluminum and a control electrode making Schottky contact with the second nitride semiconductor layer wherein the second nitride semiconductor layer includes a film whose film forming temperature is lower than the first nitride semiconductor layer.

Abstract: A semiconductor photodetector which can achieve spectral sensitivity characteristics close to relative luminous characteristics at low cost while using a light receiving element of a semiconductor made from such as silicon, has a semiconductor light receiving element having high spectral sensitivity in a wavelength range between approximately 400 nm to 1100 nm and an optical transmitting resin for sealing at least a light receiving surface of the semiconductor light receiving element. The optical transmitting resin is formed by dispersing metal boride micro particles whose particle diameter is not more than approximately 100 nm in a transparent resin and blocks light in wavelengths approximately 700 nm or above.

Abstract: An ultrasonic transducer has a rectangular piezo-electric ceramic sheet piece 2 which has a retracted portion 1 on a side face, an upper electrode layer 3 placed on an upper surface of the ceramic sheet piece, 4 a first terminal electrode that is placed on the upper surface of the ceramic sheet piece and connected to the upper electrode layer 3, a lower electrode layer 5 placed on the lower surface of the ceramic sheet piece, an electro-conductive layer 6 that is placed on the retracted side face 1 and connected to the lower electrode layer 5, a second terminal electrode 7 that is placed on the upper surface of the ceramic sheet piece and is connected to the electro-conductive layer 6, a first lead wire 9a connected to the first terminal electrode, a second lead wire 9b connected to the second terminal electrode 7, an acoustic matching layer 10 placed on the upper electrode layer, and an acoustic absorbing layer 11 placed on the surface of the lower electrode layer.

Abstract: A closed type capacitor (1) includes: an external container (10) which cuts off gas; a pair of polarized electrodes contained in the external container (10); a separator arranged between the electrodes; and a non-aqueous electrolytic liquid containing electrolyte and a non-aqueous organic solvent if necessary. The external container (10) has an opening (10A) for communication between inside and outside the container and a valve mechanism (13) which is arranged to cover the opening (10A) and which is opened and closed by the pressure difference between the inside and outside the container (10). The electrolyte contains more than 30 mass % of ion liquid. This closed type capacitor can minimize separation of electrolyte in the valve path.

Abstract: Impedance matching is achieved in a waveguide of a slot antenna, which is provided with an input waveguide that is fed power via an aperture plane; a stairway structure is provided in the input waveguide; the structure creates a step going upward toward a surface provided with a slot; the step difference and height of the step going upward are adjusted so that the impedance at a plane above the step and the impedance at the aperture plane match.

Abstract: A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.

Abstract: A method of manufacturing a semiconductor photodetector having spectral sensitivity close to relative luminous characteristics at low cost includes steps of sealing a light receiving surface side of a semiconductor light receiving element having high spectral sensitivity in wavelengths from the visible light region to infrared region with a sealing resin, a semiconductor photodetector is made by preparing dispersion liquid by dispersing micro particles having infrared blocking characteristics not more than 100 nm in toluene, preparing a sealing resin by mixing the dispersion liquid in a transparent resin, sealing the semiconductor light receiving element with the resin, removing toluene in the sealing resin by defoaming and hardening sealing resin thereafter.

Abstract: A plurality of capacitor cells (10) are layered to form a cell group. On the top of each capacitor cell (10), a pair of electrode plates (10b) is formed to protrude upward. The adjacent electrode plates (10b) are connected to each other. A connection piece (20) protruding upward is attached to each of the electrode plates (10b). The connection piece (20) is connected to a circuit substrate (30). Thus, it is possible to effectively make a connection between the cell group of the capacitor cells (10) and the circuit substrate (30).